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Read more at: Our work highlighted by Semiconductor Today

Our work highlighted by Semiconductor Today

Recent work performed in collaboration with researchers at the university of Bath has been reported on by Semiconductor Today. The work, in the Journal of Applied Physics, reinterprets the ABC model of carrier distribution suggesting it is more uniform than previously thought. Read their article here .

Read more at: Domenic offered a place at Oxford
Domenic offered a place at Oxford

Domenic offered a place at Oxford

We were pleased to hear that Domenic Peake, who has been working on developments of our educational GaN Lab App during his gap year, has been given an unconditional offer to study physics at Oriel college Oxford. Congratulations to Domenic and to Oriel college. He will be a great asset! We look forward to welcoming Domenic...

Read more at: Thomas wins UKNC poster prize
Thomas wins UKNC poster prize

Thomas wins UKNC poster prize

Our fourth year undergraduate student Thomas Weatherley attended his first academic conference last week at the winter meeting of the UK Nitrides Consortium (UKNC) and came away with the student poster prize. The poster shows his work with the group, in which he is exploring the photoconductive AFM capabilities of our new...

Read more at: GaN Centre goes large!
GaN Centre goes large!

GaN Centre goes large!

The image shows an 8" GaN-on-Si wafer from our Veeco large wafer reactor being imaged on the 8" stage of our new Bruker Nano Surfaces Dimension Icon Pro AFM. We even have automated mapping capability to efficiently sample morphologies and materials properties across the wafer! This is an exciting development for the...

Read more at: PhD in 3 minutes!
PhD in 3 minutes!

PhD in 3 minutes!

Peter Griffin will be competing in the regional heats of the Institute of Physics' 3 minute wonder competition . He won't tell us much except it might involve a sponge cake.... You can go and hear him and the other competitors at 18:30 on the 29th November at the IOP in London. Full details here .

Read more at: New students in GaN!
New students in GaN!

New students in GaN!

We're very pleased to have three short term students working with us over the course of this academic year. Two are final year undergraduates in the department undertaking their part III projects, Oliver Tesh and Thomas Weatherley. Thomas will be obtaining photoconductive atomic force microscope data as part of his project...

Read more at: GaN Prize in Department Image Competition
GaN Prize in Department Image Competition

GaN Prize in Department Image Competition

Congratulations to our very own John Jarman for second place in the department's image competition for his image of GaN facets revealed by KOH etching. You can see some of the other winners in the department's twitter feed .

Read more at: Colin is awarded the prestigious Henry Clifton Sorby Award

Colin is awarded the prestigious Henry Clifton Sorby Award

Prof. Sir Colin Humphreys from the Cambridge Centre for Gallium Nitride was presented with the Henry Clifton Sorby Award, the highest award of the International Metallographic Society (IMS) and ASM International, last week at the Materials Science and Technology 2017 Meeting in Pittsburgh, USA. He was awarded in...

Read more at: We are Hiring!

We are Hiring!

The centre is looking for a new post-doctoral research position to work on the growth of GaN on Si HEMT structures in collaboration with t he Universities of Cardiff, Sheffield, Glasgow and Manchester and aims to demonstrate an integrated GaN technology which delivers both RF power amplifiers and power switches in a single...

Read more at: GaN group in JAP's most read articles of 2017
GaN group in JAP's most read articles of 2017

GaN group in JAP's most read articles of 2017

Fabien Massabuau's article in the Journal of Applied Physics has made their list of most read articles of 2017. The article, "Carrier localization in the vicinity of dislocations in InGaN" comes out of our work on multi microscopy techniques. You can read it here for free for a limited time.

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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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Read more at: Paper of the month

Paper of the month

May 2024: Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry

    

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