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Cambridge Centre for Gallium Nitride

 
GaN Prize in Department Image Competition

Congratulations to our very own John Jarman for second place in the department's image competition for his image of GaN facets revealed by KOH etching.

You can see some of the other winners in the department's twitter feed.

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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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