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GaN Prize in Department Image Competition

last modified Nov 01, 2017 12:10 PM
GaN Prize in Department Image Competition

John's winning SEM image of GaN facets revealed by KOH etching

Congratulations to our very own John Jarman for second place in the department's image competition for his image of GaN facets revealed by KOH etching.

You can see some of the other winners in the department's twitter feed.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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November 2017: X-ray diffraction analysis of cubic zincblende III-nitrides

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