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Cambridge Centre for Gallium Nitride


B. Ding, M. Frentrup, S. M. Fairclough, G. Kusch, M. J. Kappers, D. J. Wallis, and R. A Oliver, "Multimicroscopy of cross-section zincblende GaN LED heterostructure", J. Appl. Phys. 130, 115705 (2021); DOI: 10.1063/5.0058429

S. A. Church, G. M. Christian, R. M. Barrett, S. Hammersley, M. J. Kappers, M. Frentrup, R. A. Oliver, and D.J. Binks, "Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells", J. Phys. D: Appl. Phys. 54, 475104 (2021); DOI: 10.1088/1361-6463/ac22d3

Z. Li, S. P. Senanayak, L. Dai, G. Kusch, R. Shivanna, Y. Zhang, D. Pradhan, J. Ye, Y.‐T. Huang, H. Sirringhaus, R. A. Oliver, N. C. Greenham, R. H. Friend, and R. L. Z. Hoye, "Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs2AgBiBr6 Thin Films", Adv. Funct. Mater., 2104981 (2021); DOI: 10.1002/adfm.202104981

D. Dyer, S. A. Church, M. Jain, M. J. Kappers, M. Frentrup, D. J. Wallis, R. A. Oliver, and D. J. Binks, "The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers", J. Appl. Phys. 130, 085705 (2021); DOI: 10.1063/5.0057824

M. Pristovsek, M. Frentrup, T. Zhu, G. Kusch, and C. J Humphreys, "X-ray characterisation of the basal stacking fault densities of (11-22) GaN", Cryst. Eng. Comm. 23, 6059 (2021); DOI: 10.1039/D1CE00627D

F. Massabuau, D. Nicol, F. Adams, J. Jarman, J. Roberts, A. Kovács, P. Chalker, and R. A. Oliver, "Study of Ti contacts to corundum α-Ga2O3", J. Phys. D: Appl. Phys. 54, 384001 (2021); DOI: 10.1088/1361-6463/ac0d28

S. Fairclough, A. Hinz, S. Ghosh, B. Spiridon, D. Wallis, and R. A. Oliver, "Direct evidence of an Al alloyed SiNx interlayer within an ammonia predosed AlN/Si interface via STEM-EELS", Proceedings of Electron Beam Spectroscopy for Nanooptics 2021 (EBSN2021); Link: click me

S. Shukla, M. Sood, D. Adeleye, S. Peedle, G. Kusch, D. Dahliah, M. Melchiorre, G.-M. Rignanese, G. Hautier, R. Oliver, and S. Siebentritt, "Over 15% efficient wide-band-gap Cu (In, Ga) S2 solar cell: Suppressing bulk and interface recombination through composition engineering", Joule 5, 1816 (2021); DOI: 10.1016/j.joule.2021.05.004

M. J. Holmes, T. Zhu, F.C.-P. Massabuau, J. Jarman, R. A. Oliver, and Y. Arakawa, "Pure single-photon emission from an InGaN/GaN quantum dot", APL Mater. 9, 061106 (2021); DOI: 10.1063/5.0049488

B.-F. Spiridon, M. Toon, A. Hinz, S. Ghosh, S. M. Fairclough, B. J. E. Guilhabert, M. J. Strain, I. M. Watson, M. D. Dawson, D. J. Wallis, and R. A. Oliver, "Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis", Opt. Mater. Express 11, 1643 (2021); DOI: 10.1364/OME.418728

J. Ferrer Orri, E. M Tennyson, G.r Kusch, G. Divitini, S. Macpherson, R. A. Oliver, C. Ducati, and S. D. Stranks, "Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films", Nano Ex. 2, 024002 (2021); DOI: 10.1088/2632-959X/abfe3c

S. A. Church, M. Quinn, K. Cooley-Greene, B. Ding, A. Gundimeda, M. J. Kappers, M. Frentrup, D. J. Wallis, R. A. Oliver, and D. J. Binks, "Photoluminescence efficiency of zincblende InGaN/GaN quantum wells", J. Appl. Phys. 129, 175702 (2021); DOI: 10.1063/5.0046649

R. M. Barrett, R. Ahumada-Lazo, J. A. Alanis, P. Parkinson, S. A. Church, M. J. Kappers, R. A. Oliver, and D. J. Binks, "Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells", J. Phys.: Conf. Ser. 1919, 012011 (2021); DOI: 10.1088/1742-6596/1919/1/012011

P. Vacek, M. Frentrup, L.-Y. Lee, F. C.-P. Massabuau, M. J. Kappers, D. J. Wallis, R. Gröger, and R. A. Oliver, "Defect structures in (001) zincblende GaN/3C-SiC nucleation layers", J. Appl. Phys. 129, 155306 (2021); DOI: 10.1063/5.0036366

J. A. Cuenca, M. D. Smith, D. E. Field, F. C.-P. Massabuau, S. Mandal, J. Pomeroy, D. J. Wallis, R. A. Oliver, I. Thayne, M. Kuball, and O. A. Williams, "Thermal stress modelling of diamond on GaN/III-Nitride membranes", Carbon 174, 647 (2021); DOI: 10.1016/j.carbon.2020.11.067

T. J O'Hanlon, T. Zhu, F. C.-P. Massabuau, and R. A. Oliver, "Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced", Ultramicroscopy 231, 113258 (2021); DOI: 10.1016/j.ultramic.2021.113258

K. Loeto, G. Kusch, P. M. Coulon, S. M. Fairclough, E. Le Boulbar, I. Girgel, P. A. Shields, and R. A. Oliver, "Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface", Nano Express 2, 014005 (2021); DOI: 10.1088/2632-959X/abe990

F. C.-P. Massabuau, J. W. Roberts, D. Nicol, P. R. Edwards, M. McLelland, G. L. Dallas, D. A, Hunter, E. A. Nicolson, J. C. Jarman, A. Kovács, R. W. Martin, R. A. Oliver, and P. R. Chalker, "Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870Q (2021); DOI: 10.1117/12.2588729

T. J. O'Hanlon, F. C.-P. Massabuau, A. Bao, M. J. Kappers, and R. A. Oliver, "Directly correlated microscopy of trench defects in InGaN quantum wells", Ultramicroscopy 231, 113255 (2021); DOI: 10.1016/j.ultramic.2021.113255

B. Ding, J. Jarman, M. J. Kappers, and R. A. Oliver, "Combined SEM-CL and STEM investigation of green InGaN quantum wells", J. Phys. D: Appl. Phys. 54, 165107 (2021); DOI: 10.1088/1361-6463/abddf8

Y. Calahorra, J. Dawson, Y. Grishchenko, S. Ghosh, A. Gundimeda, B. F. Spiridon, R. A. Oliver, and S. Kar-Narayan, "Magnetization and magnetoresistance of infiltrated and coated porous-GaN/nickel composites", arXiv preprint 2021; arXiv: 2102.02904

S. Ghosh, A. M. Hinz, S. M. Fairclough, B. F. Spiridon, A. Eblabla, M. A. Casbon, M. J. Kappers, K. Elgaid, S. Alam, R. A. Oliver, and D. J. Wallis, "Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon", ACS Appl. Electron. Mater. 3, 813 (2021); DOI: 10.1021/acsaelm.0c00966

H. Mirzi, S. M. Fairclough, R. J. Curry, S. J. Haigh, and M. Green, "Synthesis of IR-emitting HgTe quantum dots using an ionic liquid-based tellurium precursor", Nanoscale Adv. 3, 4062 (2021); DOI: 10.1039/D1NA00291K