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Cambridge Centre for Gallium Nitride

 

P. Vacek, M. Frentrup, L.-Y. Lee, F. C.-P. Massabuau, M. J. Kappers, D. J. Wallis, R. Gröger, and R. A. Oliver, "Defect structures in (001) zincblende GaN/3C-SiC nucleation layers", J. Appl. Phys. 129, 155306 (2021); DOI: 10.1063/5.0036366

J. A. Cuenca, M. D. Smith, D. E. Field, F. C.-P. Massabuau, S. Mandal, J. Pomeroy, D. J. Wallis, R. A. Oliver, I. Thayne, M. Kuball, and O. A. Williams, "Thermal stress modelling of diamond on GaN/III-Nitride membranes", Carbon 174, 647 (2021); DOI: 10.1016/j.carbon.2020.11.067

T. J O'Hanlon, T. Zhu, F. C.-P. Massabuau, and R. A. Oliver, "Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced", Ultramicroscopy xxxx, xxxx 113258 (2021); DOI: 10.1016/j.ultramic.2021.113258

K. Loeto, G. Kusch, P. M. Coulon, S. M. Fairclough, E. Le Boulbar, I. Girgel, P. A. Shields, and R. A. Oliver, "Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface", Nano Express 2, 014005 (2021); DOI: 10.1088/2632-959X/abe990

F. C.-P. Massabuau, J. W. Roberts, D. Nicol, P. R. Edwards, M. McLelland, G. L. Dallas, D. A, Hunter, E. A. Nicolson, J. C. Jarman, A. Kovács, R. W. Martin, R. A. Oliver, and P. R. Chalker, "Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870Q (2021); DOI: 10.1117/12.2588729

T. J. O'Hanlon, F. C.-P. Massabuau, A. Bao, M. J. Kappers, and R. A. Oliver, "Directly correlated microscopy of trench defects in InGaN quantum wells", Ultramicroscopy xxxx, xxxx 113255 (2021); DOI: 10.1016/j.ultramic.2021.113255

B. Ding, J. Jarman, M. J. Kappers, and R. A. Oliver, "Combined SEM-CL and STEM investigation of green InGaN quantum wells", J. Phys. D: Appl. Phys. 54, 165107 (2021); DOI: 10.1088/1361-6463/abddf8

Y. Calahorra, J. Dawson, Y. Grishchenko, S. Ghosh, A. Gundimeda, B. F. Spiridon, R. A. Oliver, and S. Kar-Narayan, "Magnetization and magnetoresistance of infiltrated and coated porous-GaN/nickel composites", arXiv preprint 2021; arXiv: 2102.02904

S. Ghosh, A. M. Hinz, S. M. Fairclough, B. F. Spiridon, A. Eblabla, M. A. Casbon, M. J. Kappers, K. Elgaid, S. Alam, R. A. Oliver, and D. J. Wallis, "Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon", ACS Appl. Electron. Mater. 3, 813 (2021); DOI: 10.1021/acsaelm.0c00966