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Cambridge Centre for Gallium Nitride


J. M. Jebsen, K. Nicoll Baines, R. A. Oliver, I. Jayasinghe, "Dismantling barriers faced by women in STEM", Nat. Chem. 14, 1203 (2022); DOI: 10.1038/s41557-022-01072-2

A. Barthel, L. Sayre, G. Kusch, R. A. Oliver, L. C. Hirst, "Radiation effects in ultra-thin GaAs solar cells", J. Appl. Phys. 132, 184501 (2022); DOI: 10.1063/5.0103381

N. K. Wessling, S. Ghosh, B. Guilhabert, M. Kappers, A. M. Hinz, M. Toon, R. A. Oliver, M. D. Dawson, M. J Strain, "Fabrication and transfer printing based integration of free-standing GaN membrane micro-lenses onto semiconductor chips", Opt. Mater. Express 12 (12), 4606 (2022); DOI: 10.1364/OME.472999

D. Cameron, P.R. Edwards, F. Mehnke, G. Kusch, L. Sulmoni, M. Schilling, T. Wernicke, M. Kneissl, and R.W. Martin, "The influence of threading dislocations propagating through an AlGaN UVC LED", Appl. Phys. Lett. 120, 162101 (2022); DOI: 10.1063/5.0086034

A. Ofiare, S. Taking, M. Elksne, A. Al-Khalidi, S. Ghosh, M. Kappers, R.A. Oliver, and E. Wasige, "Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current using AlGaN Overgrowth Technique", UK Semiconductors 2022 (UKS '22); Link: click me

N.K. Wessling, S. Ghosh, B. Guilhabert, M. Kappers, R.A. Oliver, M.D. Dawson, and M.J. Strain, "Integration of single GaN micro-lenses with high index semiconductors by transfer printing", Conference on Lasers and Electro-Optics (CLEO): Applications and Technology 2022; DOI: 10.1364/CLEO_AT.2022.JW3A.35

N.K. Wessling, S. Ghosh, B. Guilhabert, M. Kappers, R.A. Oliver, M.D. Dawson, and M.J. Strain, "Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips", arXiv preprint, arXiv:2208.05275 (2022); arXiv: 2208.05275

J. Ferrer Orri, F. Kosasih, Y. Sun, G. Kusch, G. Divitini, R. Oliver, C. Ducati, and S. Stranks, "Using Cathodoluminescence from Continuous and Pulsed-Mode SEM to Elucidate the Nanostructure of Hybrid Halide Perovskite Materials", Microsc. Microanal. 28 (Suppl 1), 2006-2008 (2022); DOI: 10.1017/S1431927622007796

F. U. Kosasih, F. Di Giacomo, J. Ferrer Orri, K. Li, E. M. Tennyson, W. Li, F. Matteocci,G. Kusch, R. A. Oliver, J. L. MacManus-Driscoll, K. L. Moore, S. D. Stranks, A. Di Carlo,G. Divitini, and C. Ducati, "Sodium Diffuses from Glass Substrates through P1 Lines and Passivates Defects in Perovskite Solar Modules", Energy & Environmental Materials 0, e12459 (2022); DOI: 10.1002/eem2.12459

D. Binks, P. Dawson, R.A. Oliver, and D.J. Wallis, "Cubic GaN and InGaN/GaN Quantum wells", Applied Physics Reviews 9, 041309 (2022); DOI: DOI: 10.1063/5.0097558

Y. Hou, M. Kappers, C. Jin, and R. A. Oliver, "Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN", Appl. Phys. Lett. 120, 202101 (2022); DOI: 10.1063/5.0094454

B.F. Spencer, S.A. Church, P. Thompson, D.J.H. Cant, S. Maniyarasu, A. Theodosiou, A.N. Jones, M.J. Kappers, D.J. Binks, R.A. Oliver, J. Higgins, A.G. Thomas, T. Thomson, A.G. Shard, and W.R. Flavell, "Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)", Faraday Discussions 236, 311-317 (2022); DOI: 10.1039/D2FD00021K

A. Gundimeda, M. Frentrup, S. M. Fairclough, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlGaN nucleation layers", Journal of Applied Physics 131, 115703 (2022); DOI: 10.1063/5.0077186

V. Villafañe, B. Scaparra, M. Rieger, S. Appel, R. Trivedi, T. Zhu, J. Jarman, R. A. Oliver, R. A. Taylor, J. J. Finley, and K. Mueller, "Three-photon excitation of quantum two-level systems", arXiv preprint arXiv:2202.02034 (2022); arXiv: 2202.02034

F. U. Kosasih, G. Divitini, J. Ferrer Orri, E. M. Tennyson, G. Kusch, R. A. Oliver, S. D. Stranks, and C. Ducati, "Optical emission from focused ion beam milled halide perovskite device cross‐sections", Microsc. Res. Tech. 85, 2351-2355 (2022); DOI: 10.1002/jemt.24069

A. Gundimeda, M. Rostami, M. Frentrup, A. Hinz, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Influence of AlxGa1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)", J. Phys. D: Appl. Phys. 55, 175110 (2022); DOI: 10.1088/1361-6463/ac4c58

G. Kusch, M. Frentrup, N. Hu, H. Amano, R. A. Oliver, and M. Pristovsek, "Defect characterization of {10-13} GaN by electron microscopy", J. Appl. Phys. 131, 035705 (2022); DOI: 10.1063/5.0077084

G. Kusch, E. J. Comish, K. Loeto, S. Hammersley, M. J. Kappers, P. Dawson, R. A. Oliver, and F. C.-P. Massabuau, "Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence", Nanoscale 14, 402-409 (2022); DOI: 10.1039/D1NR06088K

C. Kocher, J. C. Jarman, T. Zhu, G. Kusch, R. A. Oliver, and R. A. Taylor, "Decreased Fast Time Scale Spectral Diffusion of a Nonpolar InGaN Quantum Dot", ACS Photonics 9, 275-281 (2022); DOI: 10.1021/acsphotonics.1c01613