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Cambridge Centre for Gallium Nitride

 
Read more at: Research visit of Dr Victoria Esteso Carrizo

Research visit of Dr Victoria Esteso Carrizo

Our collaborator Dr Victoria Esteso Carrizo from the Universidad de Sevilla is visiting us for the next two weeks to do very exciting studies of the optical properties of porous GaN.


Read more at: Maruf wins the Deaprtment Photo competitions in the categories Technical & General

Maruf wins the Deaprtment Photo competitions in the categories Technical & General

Congratulations to our PhD student Maruf Sarkar for winning the prestige Department photo competition 2024 in both the Technical and the General categories. The photos ‘Tomographic FIB-SEM of a porous GaN DBR’ (Technical category) and ‘Aviators in stasis’ (General category) have been highlighted by the Heads of Department...


Read more at: APL has selected our paper as Editor's Pick

APL has selected our paper as Editor's Pick

We are absolutely excited that the paper of our PhD student Chen Chen on the hyperspectral scanning capacitance microscopy of GaN-based HEMT structures has been selected as Editor's Pick by Applied Physics Letters. We are very grateful for the honor. If you want to learn more about our hyperspectral mapping research...


Read more at: QuantEmX exchange fellowship and Accelnet Quantum Materials exchange award for Kumaran

QuantEmX exchange fellowship and Accelnet Quantum Materials exchange award for Kumaran

Congratulations to Kumaran on being selected for a 2024 QuantEmX exchange fellowship and Accelnet Quantum Materials exchange award. This summer he will be investigating the effects of polarised light in semiconductor crystals out in California, with the Optics of Quantum Materials group at the University of California...


Read more at: Rachel at No 10 Downing Street

Rachel at No 10 Downing Street

Rachel Oliver was honoured to be invited to number 10 Downing Street for a Semiconductor Strategy Reception on Monday 20 May. At the reception, the Parliamentary Under-Secretary of State for Tech and the Digital Economy, Saqib Bhatti MP, announced that the government will establish a new UK Semiconductor Institute to...


Read more at: Invited talk at E-MRS 2024 in Strasbourg

Invited talk at E-MRS 2024 in Strasbourg

Our PhD student Chen Chen will give an invited talk at the E-MRS Spring Meeting 2024 in Strasbourg (France). His talk on " Scanning Capacitance Microscopy of Nitride High Electron Mobility Transistors " is part of the Analytical Techniques for Accurate Nanoscale Characterization of Advanced Materials (ALTECH 2024)...


Read more at: Our work as cover image for the Microscopy and Microanalysis journal

Our work as cover image for the Microscopy and Microanalysis journal

The work by our PhD student Maruf Sarkar has been chosen as cover image for the latest volume of the Microscopy and Microanalysis journal. The sub-surface image of a porous GaN distributed Bragg reflector (DBR) has been captured by backscattered electron scanning electron microscopy (BSE-SEM). The DBR is fabricated by...


Read more at: Happy Graduation to Dr Abhiram Gundimeda

Happy Graduation to Dr Abhiram Gundimeda

We are very excited about Abhiram's graduation! It has been a very proud moment for him and us, and after all the stress of a PhD study has finaly paid off. We wish him all the best and adventures in his new job in the semiconductor industry. Congratulations and Happy Graduation. Have a successful future. Your proud...


Read more at: Welcome Petr Vacek

Welcome Petr Vacek

Dr Petr Vacek, an expert on the field of electron microscopy has rejoined the group. He will now work parallel in the Departments's Electron Microscopy Group and in the Cambridge Centre for Gallium Nitride.


Read more at: Farewell to Dr Saptarsi Ghosh

Farewell to Dr Saptarsi Ghosh

The Cambridge Centre for GaN says goodbye to Dr Saptarsi Ghosh , who is heading off to become a lecturer at Swansea University. We wish him good luck for the next exciting step of his life and his new research adventures.


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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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