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Cambridge Centre for Gallium Nitride

 

Publications in 2017:

Kumar, S., Gupta, P., Guiney, I., Humphreys, C. J., Raghavan, S., Muralidharan, R., Nath D. N., "Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer," in IEEE Transactions on Electron Devices, vol. PP, no. 99, pp. 1-7. DOI: 10.1109/TED.2017.2757516

Rouet-Leduc, B., Hulbert, C., Barros, K., Lookman, T., Humphreys, C. J., "Automatized convergence of optoelectronic simulations using active machine learning", Appl. Phys. Lett. 111, 043506 (2017). DOI: 10.1063/1.4996233

Rouet-Leduc, B., Hulbert, C., Lubbers, N., Barros, K., Humphreys, C. J., & Johnson, P. A. (2017). Machine learning predicts laboratory earthquakes. Geophysical Research Letters, 44, 9276–9282. DOI: 10.1002/2017GL074677

Guiney, I., Thomas, S., Humphreys, C. J., "Single-step manufacturing process for the production of graphene-V/III LED heterostructures", Proceedings Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI; 101240D (2017). DOI: 10.1117/12.2250166

Kim, J.-Y., Ionescu, A., Mansell, R., Farrer, I., Oehler, F., Kinane, C. J, Cooper, J. F. K., Steinke, N.-J., Langridge, S., Stankiewicz, R., Humphreys, C. J., Cowburn, R. P., Holmes, S. N., Barnes, C. H. W., "Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)", Journal of Applied Physics 121, 043904 (2017). DOI: 10.1063/1.4973956

Humphreys, C. J., Waddington, G., "Solar eclipse of 1207 BC helps to date pharaohs", Astronomy & Geophysics 58(5):5.39-5.42, (October 2017). DOI: 10.1093/astrogeo/atx178

Eblabla, A. M., Li,  X., Wallis, D. J., Guiney, I.,  Elgaid, K., "GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology," IEEE Transactions on Terahertz Science and Technology, vol. 7, no. 1, pp. 93-97, Jan. 2017. DOI: 10.1109/TTHZ.2016.2618751

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D. J., Guiney, I., Elgaid, K., “Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology”, IEEE Microwave and Wireless Components Letters, vol. 27, no. 1, pp. 10-12, Jan. 2017. DOI: 10.1109/LMWC.2016.2629964

Jiang, S., Lee, K. B., Guiney, I., Miaja, O. F., Zaidi, Z. H., Qian, H., Wallis, D. J., Forsyth, A. J., Humphreys, C. J., Houston, P. A., “All-GaN Integrated Cascode Heterojunction Field Effect Transistors”, IEEE Transactions on Power Electronics, vol. 32, no. 11, pp. 8743-8750, Nov. 2017. DOI: 10.1109/TPEL.2016.2643499

Eblabla, A., Benakaprasad, B., Li, X., Wallis D. J., Guiney, I., Humphreys, C. J., Elgaid, K., “Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC)”, 2017 18th International Radar Symposium (IRS), Prague, 2017, pp. 1-7. DOI: 10.23919/IRS.2017.8008166

Floros, K., Li, X., Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E., Moran, D. A. J., Humphreys, C. J. and Thayne, I. G., "Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt- and Ni-based gate stacks", Phys. Status Solidi A, 214: n/a, 1600835, (2017) DOI:10.1002/pssa.201600835

Mandal, S., Thomas, E. L. H., Middleton, C., Gines, L., Griffiths, J., Kappers, M. J., Oliver, R. A., Wallis, D. J., Goff, L. E., Lynch, S. A., Kuball, M., Williams, O. A., “Surface zeta potential and diamond seeding on gallium nitride films”, arXiv preprint arXiv:1707.05410, (2017), DOI: 10.1021/acsomega.7b01069

Massabuau, F. C-P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovacs, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E., Oliver, R. A., “Carrier localization in the vicinity of dislocations in InGaN”, J. Appl. Phys., 121,  13104, (2017), DOI: 10.1063/1.4973278 

Coulon, P.-M., Vajargah, S. H., Bao, A., Edwards, P. R., Le Boulbar, E. D., Girgel, I., Martin, R. W., Humphreys, C. J., Oliver, R. A., Allsopp, Duncan W. E., Shields, Philip A., “Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure”, Crystal Growth & Design, 17, 474-482, (2017), DOI: 10.1021/acs.cgd.6b01281 

Zhu, T., Liu, Y., Ding, T., Fu, W. Y., Jarman, J., Ren, C. X., Kumar, R. V., Oliver, R. A., “Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification”, Scientific Reports, 7,  45344, (2017), DOI: 10.1038/srep45344 

Griffiths, J. T., Ren, C. X., Coulon, P. -M., Le Boulbar, E. D., Bryce, C. G., Girgel, I., Howkins, A., Boyd, I., Martin, R. W., Allsopp, D. W. E., Shields, P. A., Humphreys, C. J., Oliver, R. A., “Structural impact on the nanoscale optical properties of InGaN core-shell nanorods”, Appl. Phys. Lett., 110,  172105, (2017), DOI: 10.1063/1.4982594

Magalhaes, S., Franco, N., Watson, I. M., Martin, R. W., O”Donnell, K. P., Schenk, H. P. D., Tang, F., Sadler, T. C., Kappers, M. J., Oliver, R. A., Monteiro, T., Martin, T. L., Bagot, P. A. J., Moody, M. P., Alves, E., Lorenz, K., “Validity of Vegard”s rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates”, J. Phys. d, 50, 205107, (2017), DOI: 10.1088/1361-6463/aa69dc

Pristovsek, M., Bao, A., Oliver, R. A., Badcock, T., Ali, M., Shields, A.,“Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes”, Phys. Rev. Appl., 7,  64007, (2017), DOI: 10.1103/PhysRevApplied.7.064007

Wang, T., Puchtler, T. J., Zhu, T., Jarman, J. C., Kocher, C. C., Oliver, R. A., Taylor, R. A., “Temperature-dependent fine structure splitting in InGaN quantum dots”, Appl. Phys. Lett., 111,  53101, (2017), DOI: 10.1063/1.4996861

Wang, T., Puchtler, T. J., Zhu, T., Jarman, J. C., Nuttall, L. P., Oliver, R. A., Taylor, R. A., “Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots”,  Nanoscale, 9, 9421-9427, (2017), DOI: 10.1039/c7nr03391e

Rae, K., Foucher, C., Guilhabert, B., Islim, M. S., Yin, L., Zhu, D., Oliver, R. A., Wallis, D. J., Haas, H., Laurand, N., Dawson, M. D., “InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass”, Optics Express, 25,  19179-19184, (2017), DOI: 10.1364/OE.25.019179

Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P., “Photoluminescence studies of cubic GaN epilayers”, phys. stat. sol. b, 254, 1600733, (2017), DOI: 10.1002/pssb.201600733

Bao, A., Goff, L. E., Zhu, T., Sahonta, S. -L., Ritchie, D. A., Joyce, H. J., Moram, M. A., Oliver, R. A., “Properties of GaN nanowires with ScxGa1-xN insertion”, phys. stat. sol. b, 254, 1600740,  (2017), DOI: 10.1002/pssb.201600740

Massabuau, F. C-P., Rhode, S. L., Horton, M. K., O”Hanlon, T. J., Kovacs, A., Zielinski, M. S., Kappers, M. J., Dunin-Borkowski, R. E., Humphreys, C. J., Oliver, R. A., “Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties”, Nano Letters, 17, 4846-4852, (2017), DOI: 10.1021/acs.nanolett.7b01697

Wang, T., Puchtler, T. J., Zhu, T., Jarman, J. C., Oliver, R. A., Taylor, R. A., “High-temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method”, phys. stat. sol. b, 254, 1600724,(2017), DOI: 10.1002/pssb.201600724

Patra, S. K., Wang, T., Puchtler, T. J., Zhu, T., Oliver, R. A., Taylor, R. A., Schulz, S., “Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots”, phys. stat. sol. b, 254, 1600675,(2017), DOI: 10.1002/pssb.201600675

Massabuau, F., Kappers, M., Humphreys, C., Oliver, R., “Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth”, phys. stat. sol. b, 254, 1600666,(2017), DOI: 10.1002/pssb.201600666

Massabuau, F., Piot, N., Frentrup, M., Wang, X., Avenas, Q., Kappers, M., Humphreys, C., Oliver, R., “X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface”, phys. stat. sol. b, 254, 1600664, (2017), DOI: 10.1002/pssb.201600664

Wang, T., Puchtler, T. J., Patra, S. K., Zhu, T., Ali, M., Badcock, T. J., Ding, T., Oliver, R. A., Schulz, S., Taylor, R. A., “Direct generation of linearly polarized single photons with a deterministic axis in quantum dots”, Nanophotonics, 6, 1175-1183, (2017), DOI: 10.1515/nanoph-2017-0027

Madusanka, N., Shivareddy, S. G., Eddleston, M. D., Hiralal, P., Oliver, R. A., Amaratunga, G. A. J., “Dielectric behaviour of montmorillonite/cyanoethylated cellulose nanocomposites”, Carbohydrate Polymers, 172, 315-321, (2017), DOI: 10.1016/j.carbpol.2017.05.057

Frentrup, M., Lee, L.Y., Sahonta, S.-L., Kappers, M.J., Massabuau, F., Gupta, P., Oliver, R.A., Humphreys, C.J., Wallis, D.J., "X-ray analysis of cubic zincblende III-nitrides", J. Phys. D: Appl. Phys., 50 , 433002, (2017), DOI: 10.1088/1361-6463/aa865e

Humphreys, C. J., Griffiths, J. T., Tang, F., Oehler, F., Findlay, S. D., Zheng, C., Etheridge, J., Martin, T. L., Bagot, P. A. J., Moody, M. P., Sutherland, D., Dawson, P., Schulz, S., Zhang, S., Fu, W. Y., Zhu, T., Kappers, M. J., Oliver, R. A., “The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem”, Ultramicroscopy, 176, 93-98,  (2017), DOI: 10.1016/j.ultramic.2017.01.019

Lee, L. Y., "Cubic zincblende gallium nitride for green-wavelength light-emitting diodes", Materials Science and Technology, 2017, DOI: 10.1080/02670836.2017.1300726

Ren, C.X., Puchtler, T.J., Zhu, T., Griffiths, J.T., Oliver, R.A.,“Defects in III-nitride microdisk cavities”, Semiconductor Science And Technology, 32, 033002, (2017), DOI: 10.1088/1361-6641/32/3/033002

Rigutti, L., Bonef, B., Speck, J., Tang, F., Oliver, R.A., “Atom probe tomography of nitride semiconductors”, Scripta Materialia, (2017), DOI: 10.1016/j.scriptamat.2016.12.034

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D. J., Guiney I., Elgaid, K., "Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology", IEEE Microwave and Wireless Components Letters, 27(1), 10-12 (2017), DOI: 10.1109/LMWC.2016.2629964

Qian, H; Lee, K; Hosseini, S; Novikov, S; Guiney, I; Zaidi, Z; Jiang, S; Wallis, D; Foxon, C; Humphreys, C; Houston, P, "Novel GaN-based Vertical Heterostructure Field Effect Transistor Structures Using Crystallographic KOH etching and Overgrowth", Journal of Crystal Growth, 459, 185-188, (2017), DOI:10.1016/j.jcrysgro.2016.12.025

 

Publications in 2016:

M. Pristovsek, M. Frentrup, Y. Han, and C. J. Humphreys (2016). Optimising GaN (1122) hetero-epitaxal templates grown on (1010) sapphire. Physica Status Solidi B, 253 (1), 61. doi10.1002/pssb.201552263

T. Grinys, R. Dargis, M. Frentrup, A. Kalpakovaite, K. Badokas, S. Stanionyte, A. Clark, and T. Malinauskas (2016). Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer. Journal of Applied Physics, 120, 105301. doi: 10.1063/1.4962312

Puchtler, T. J., Wang, T., Ren, C. X., Tang, F., Oliver, R. A., Taylor, R. A., & Zhu, T. (2016). Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires.. Nano Lett, 16 (12), 7779-7785. doi:10.1021/acs.nanolett.6b03980

Zhu, T., Gachet, D., Tang, F., Fu, W. Y., Oehler, F., Kappers, M. J., . . . Oliver, R. A. (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Applied Physics Letters, 109 (23). doi:10.1063/1.4971366

Massabuau, F. C. P., Piot, N., Frentrup, M., Wang, X., Avenas, Q., Kappers, M., . . . Oliver, R. (n.d.). Research data supporting "X-ray reflectivity method for the characterisation of InGaN/GaN quantum well interface". doi: 10.17863/CAM.6606

Hibberd, M. T., Frey, V., Spencer, B. F., Mitchell, P. W., Dawson, P., Kappers, M. J., . . . Graham, D. M. (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Solid State Communications, 247, 68-71. doi:10.1016/j.ssc.2016.08.017

Schulz, S., Tanner, D. S. P., O'Reilly, E. P., Caro, M. A., Tang, F., Griffiths, J. T., . . . Dawson, P. (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m -plane InGaN/GaN quantum wells. Applied Physics Letters, 109 (22). doi: 10.1063/1.4968591

Zhu, T., Gachet, D., Tang, F., Fu, W. Y., Oehler, F., Kappers, M. J., . . . Oliver, R. A. (n.d.). Research data supporting "Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence". doi: 10.17863/CAM.6452

Kundys, D., Sutherland, D., Davies, M. J., Oehler, F., Griffiths, J., Dawson, P., . . . Oliver, R. A. (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Science and Technology of Advanced Materials, 17 (1), 736-743. doi:10.1080/14686996.2016.1244474

Griffiths, J. T., Zhang, S., Lhuillier, J., Zhu, D., Fu, W. Y., Howkins, A., . . . Oliver, R. A. (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Journal of Applied Physics, 120 (16). doi:10.1063/1.4965989

Badcock, T. J., Ali, M., Zhu, T., Pristovsek, M., Oliver, R. A., & Shields, A. J. (2016). Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures. Applied Physics Letters, 109(15). doi:10.1063/1.4964842

Pristovsek, M., Han, Y., Zhu, T., Oehler, F., Tang, F., Oliver, R. A., . . . Weyers, M. (2016). Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120). Semiconductor Science and Technology, 31 (8). doi:10.1088/0268-1242/31/8/085007

Davies, M. J., Dawson, P., Hammersley, S., Zhu, T., Kappers, M. J., Humphreys, C. J., & Oliver, R. A. (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters, 108 (25). doi:10.1063/1.4954236

Dawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., & Humphreys, C. J. (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics, 119 (18). doi:10.1063/1.4948237

Madusanka, N., Shivareddy, S. G., Hiralal, P., Eddleston, M. D., Choi, Y., Oliver, R. A., & Amaratunga, G. A. J. (2016). Nanocomposites of TiO/cyanoethylated cellulose with ultra high dielectric constants.. Nanotechnology, 27 (19), 195402. doi:10.1088/0957-4484/27/19/195402

Griffiths, J. T., Oehler, F., Tang, F., Zhang, S., Fu, W. Y., Zhu, T., . . . Oliver, R. A. (2016). The microstructure of non-polar a-plane (11 2  0) InGaN quantum wells. Journal of Applied Physics, 119 (17). doi:10.1063/1.4948299

Hammersley, S., Dawson, P., Kappers, M. J., Massabuau, F. C. P., Frentrup, M., Oliver, R. A., & Humphreys, C. J. (2016). Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs. Physica Status Solidi (C) Current Topics in Solid State Physics, 13 (5-6), 262-265. doi:10.1002/pssc.201510188

Davies, M. J., Hammersley, S., Massabuau, F. C. P., Dawson, P., Oliver, R. A., Kappers, M. J., & Humphreys, C. J. (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Journal of Applied Physics, 119 (5). doi:10.1063/1.4941321

Zhu, T., Ding, T., Tang, F., Han, Y., Ali, M., Badcock, T., . . . Oliver, R. A. (2016). Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.. Cryst Growth Des, 16 (2), 1010-1016. doi:10.1021/acs.cgd.5b01560

Zhu, T., & Oliver, R. A. (2016). Nitride quantum light sources. EPL, 113 (3). doi:10.1209/0295-5075/113/38001

Christian, G. M., Hammersley, S., Davies, M. J., Dawson, P., Kappers, M. J., Massabuau, F. C. P., . . . Humphreys, C. J. (2016). Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics, 13 (5-6), 248-251. doi:10.1002/pssc.201510180

Novikov, S. V., Staddon, C. R., Sahonta, S. L., Oliver, R. A., Humphreys, C. J., & Foxon, C. T. (2016). Molecular beam epitaxy of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1-x</inf>N layers using a highly efficient RF plasma source. Physica Status Solidi (C) Current Topics in Solid State Physics, 13 (5-6), 217-220. doi:10.1002/pssc.201510166

Dunn, A., Spencer, B. F., Hardman, S. J. O., Graham, D. M., Hammersley, S., Davies, M. J., . . . Humphreys, C. J. (2016). Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy. Physica Status Solidi (C) Current Topics in Solid State Physics, 13 (5-6), 252-255. doi:10.1002/pssc.201510193

Novikov, S. V., Staddon, C. R., Sahonta, S. L., Oliver, R. A., Humphreys, C. J., & Foxon, C. T. (2016). Growth of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1-x</inf>N layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, 456, 151-154. doi:10.1016/j.jcrysgro.2016.07.038

Hammersley, S., Kappers, M. J., Massabuau, F. C. P., Sahonta, S. L., Dawson, P., Oliver, R. A., & Humphreys, C. J. (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. Physica Status Solidi (C) Current Topics in Solid State Physics, 13 (5-6), 209-213. doi:10.1002/pssc.201510187

Oliver, R. A. (2016). Critical assessment 23: Gallium nitride-based visible light-emitting diodes. Materials Science and Technology (United Kingdom), 32 (8), 737-745. doi:10.1080/02670836.2015.1116225

Ren, C. X., Rouet-Leduc, B., Griffiths, J. T., Bohacek, E., Wallace, M. J., Edwards, P. R., . . . Oliver, R. A. (2016). Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs. Superlattices and Microstructures, 99, 118-124. doi: 10.1016/j.spmi.2016.03.036

J Bruckbauer, C Brasser, NJ Findlay, PR Edwards, DJ Wallis, PJ Skabara and RW Martin, "Colour tuning in white hybrid inorganic/organic light-emitting diodes", Journal of Physics D: Applied Physics 49 (40), 405103, (2016)

E Taylor-Shaw, E Angioni, N J. Findlay, B Breig, A R. Inigo, J Bruckbauer, D J. Wallis, P J. Skabara, and R W. Martin, " Cool to Warm White Light Emission from Inorganic/ Organic Hybrid Light Emitting Diodes", Journal of Materials Chemistry C 4 (48), 11499-11507 (2016)

Qian, H; Lee, K; Hosseini, S; Novikov, S; Guiney, I; Zhang, S; Zaidi, S; Jiang, S; Wallis, D; Foxon, C; Humphreys, C; Houston, P, "Characterization of p-GaN1-xAsx/n-GaN PN Junction Diodes ", Semiconductor Science and Technology, 31 (6), 65020-65025 (2016) 

WM. Waller, MJ. Uren, KB Lee, PA. Houston, DJ. Wallis, I Guiney, CJ. Humphreys, S Pandey, J Sonsky, and M Kuball, "Subthreshold mobility in AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices 63 (5), 1861-1865, (2016)

JW Roberts, P Chalker, KB Lee, PA Houston,SJ Cho, IG Thayne, I Guiney, DJ Wallis and CJ Humphreys, "Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics", Applied Physics Letters 108 (7), 072901 (2016)

Y Han, D Zhu, T Zhu, CJ Humphreys, DJ Wallis," Origins of hillock defects on GaN templates grown on Si(111)", Journal of Crystal Growth 434, 123-127 (2016)

A Eblabla, X Li, DJ Wallis, I Guiney, K Elgaid, " GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology", IEEE Transactions on Terahertz Science and Technology, 7 (1), 93-97, (2016), DOI: 10.1109/TTHZ.2016.2618751

 

Publications in 2015:

A.J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J.J.D. McKendry, D. Zhu, N. Laurand, E. Gu, D.J. Wallis, I.M. Watson, C.J. Humphreys, and M.D. Dawson, " Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing", Optics Express 23(7), 9329-9338 (2015)

Sutherland, D., Zhu, T., Griffiths, J. T., Tang, F., Dawson, P., Kundys, D., Oehler, F., Kappers, M. J., Humphreys, C. J. and Oliver, R. A. (2015), Optical studies of non-polar m-plane (math formula) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN. Phys. Status Solidi B, 252: 965–970. doi: 10.1002/pssb.201451563

Griffiths, J. T.Zhang, S.Rouet-Leduc, B.Fu, W. Y.Bao, A.Zhu, D.Wallis, D., et al. (2015). Nanocathodoluminescence reveals mitigation of the Stark shift in InGaN quantum wells by Si doping. Nano Letters15 (11), 7639-7643. doi: 10.1021/acs.nanolett.5b03531

Springbett, H.Griffiths, J.Ren, C.O’Hanlon, T.Barnard, J.Sahonta, S.Zhu, T., & et al. (2015). Structure and composition of nonpolar (11-20) InGaN nano-rings grown by Modified Droplet Epitaxy. Physica Status Solidi (b)253, No. 5, 840844. doi: 10.1002/pssb.201552633

Zhang, S.Cui, Y.Griffiths, J. T.Fu, W. Y.Freysoldt, C.Neugebauer, J.Humphreys, C. J., & et al. (2015). Difference in linear polarization of biaxially-strained InₓGa₁₋ₓN alloys on non-polar a-plane and m-plane GaN. Physical Review B, 92 (245202). doi: 10.1103/PhysRevB.92.245202

Schulz, S.Tanner, D. P.O'Reilly, E. P.Caro, M. A.Martin, T. L.Bagot, P. A. J.Moody, M. P., et al. (2015). Structural, electronic and optical properties of m-plane (In,Ga)N/GaN quantum wells: Insights from experiment and atomistic theory. Physical Review B92 (235419). doi: 10.1103/PhysRevB.92.235419

Matt Horton, Sneha Rhode, Lata Sahonta, Menno Kappers, Sarah Haigh, Tim Pennycook, Colin Humphreys, Rajiv Dusane and Shelly Moram (2015). Segregation of In to Dislocations in InGaN. Nano Letters, 15, 2, 923-930. doi: 10.1021/nl5036513

Markus Pristovsek, Yisong Han, Tongtong Zhu, Martin Frentrup, Menno J. Kappers, Colin J. Humphreys, Grzegorz Kozlowski, Pleun Maaskant, Brian Corbett (2015). Low defect large area semi-polar(11¯22) GaN grown on patterned(113) silicon. Phys. Status Solidi B, 1–5. doi: 10.1002/pssb.201451591

Zhu, T., Griffiths, J. T., Fu, W. Y., Howkins, A., Boyd, I. W., Kappers, M. J., & Oliver, R. A. (2015). Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy. Superlattices and Microstructures, 88, 480-488. doi:10.1016/j.spmi.2015.10.001

Zhang, S., Cui, Y., Griffiths, J. T., Fu, W. Y., Freysoldt, C., Neugebauer, J., . . . Oliver, R. A. (2015). Difference in linear polarization of biaxially strained inx G a1-x N alloys on nonpolar a -plane and m -plane GaN. Physical Review B - Condensed Matter and Materials Physics, 92(24). doi:10.1103/PhysRevB.92.245202

Griffiths, J. T., Zhang, S., Rouet-Leduc, B., Fu, W. Y., Bao, A., Zhu, D., . . . Oliver, R. A. (2015). Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping..Nano Lett, 15(11), 7639-7643. doi:10.1021/acs.nanolett.5b03531

Hammersley, S., Kappers, M. J., Massabuau, F. C. P., Sahonta, S. L., Dawson, P., Oliver, R. A., & Humphreys, C. J. (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Applied Physics Letters, 107(13). doi:10.1063/1.4932200

Tang, F., Barnard, J. S., Zhu, T., Oehler, F., Kappers, M. J., & Oliver, R. A. (2015). Microstructural dependency of optical properties of m -plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates. Applied Physics Letters, 107(8). doi:10.1063/1.4928723

Sugime, H., Esconjauregui, S., D'Arsié, L., Yang, J., Robertson, A. W., Oliver, R. A., . . . Robertson, J. (2015). Low-Temperature Growth of Carbon Nanotube Forests Consisting of Tubes with Narrow Inner Spacing Using Co/Al/Mo Catalyst on Conductive Supports..ACS Appl Mater Interfaces, 7(30), 16819-16827. doi:10.1021/acsami.5b04846

Niu, N., Woolf, A., Wang, D., Zhu, T., Quan, Q., Oliver, R. A., & Hu, E. L. (2015). Ultra-low threshold gallium nitride photonic crystal nanobeam laser. Applied Physics Letters, 106(23). doi:10.1063/1.4922211

Sutherland, D., Zhu, T., Griffiths, J. T., Tang, F., Dawson, P., Kundys, D., . . . Oliver, R. A. (2015). Optical studies of non-polar m-plane (11-00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN. Physica Status Solidi (B) Basic Research, 252(5), 965-970. doi:10.1002/pssb.201451563

Massabuau, F. C. P., Davies, M. J., Blenkhorn, W. E., Hammersley, S., Kappers, M. J., Humphreys, C. J., . . . Oliver, R. A. (2015). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. Physica Status Solidi (B) Basic Research, 252(5), 928-935. doi:10.1002/pssb.201451543

Hammersley, S., Davies, M. J., Dawson, P., Oliver, R. A., Kappers, M. J., & Humphreys, C. J. (2015). Carrier distributions in InGaN/GaN light-emitting diodes. Physica Status Solidi (B) Basic Research, 252(5), 890-894. doi:10.1002/pssb.201451534

Davies, M. J., Dawson, P., Massabuau, F. C. P., Fol, A. L., Oliver, R. A., Kappers, M. J., & Humphreys, C. J. (2015). A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures. Physica Status Solidi (B) Basic Research, 252(5), 866-872. doi:10.1002/pssb.201451535

Tang, F., Moody, M. P., Martin, T. L., Bagot, P. A. J., Kappers, M. J., & Oliver, R. A. (2015). Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials..Microsc Microanal, 21(3), 544-556. doi:10.1017/S1431927615000422

Reid, B. P. L., Kocher, C., Zhu, T., Oehler, F., Chan, C. C. S., Oliver, R. A., & Taylor, R. A. (2015). Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization. Applied Physics Letters, 106(17). doi:10.1063/1.4919656

Kappers, M. J., Zhu, T., Sahonta, S. L., Humphreys, C. J., & Oliver, R. A. (2015). SCM and SIMS investigations of unintentional doping in III-nitrides. Physica Status Solidi (C) Current Topics in Solid State Physics, 12(4-5), 403-407. doi:10.1002/pssc.201400206

Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., . . . Martin, R. W. (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117(11). doi:10.1063/1.4915628

Tang, F., Zhu, T., Oehler, F., Fu, W. Y., Griffiths, J. T., Massabuau, F. C. P., . . . Oliver, R. A. (2015). Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography. Applied Physics Letters, 106(7). doi:10.1063/1.4909514

Puchtler, T. J., Woolf, A., Zhu, T., Gachet, D., Hu, E. L., & Oliver, R. A. (2015). Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities..ACS Photonics, 2(1), 137-143. doi:10.1021/ph500426g

Kappers, M. J., Zhu, T., Sahonta, S. -L., Humphreys, C. J., & Oliver, R. A. (2015). SCM and SIMS investigations of unintentional doping in III-nitrides. Physica Status Solidi (C) Current Topics in Solid State Physics. doi:10.1002/pssc.201400206

Tang, F., Moody, M. P., Martin, T. L., Bagot, P. A. J., Kappers, M. J., & Oliver, R. A. (2015). Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials. Microscopy and Microanalysis, 21(3), 544-556. doi:10.1017/S1431927615000422

Sutherland, D., Zhu, T., Griffiths, J. T., Tang, F., Dawson, P., Kundys, D., . . . Oliver, R. A. (2015). Optical studies of non-polar m-plane (11-00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN. Physica Status Solidi (B) Basic Research. doi:10.1002/pssb.201451563

Massabuau, F. C. -P., Davies, M. J., Blenkhorn, W. E., Hammersley, S., Kappers, M. J., Humphreys, C. J., . . . Oliver, R. A. (2015). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. Physica Status Solidi (B) Basic Research. doi:10.1002/pssb.201451543

A. Eblabla, X. Li, I. Thayne, D. J. Wallis, I. Guiney, K. Elgaid (2015). High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for x-Band Applications. Physica Status Solidi B, Volume 252, 866-872. doi: 10.1109/LED.2015.2460120

A Eblabla, K Elgaid, DJ Wallis, I Guiney, "Novel Shielded Coplanar Waveguides on GaN-on-Low Resistivity Si Substrates for MMIC Applications", IEEE Microwave and Wireless Components Letters, 25(7) 427-429 (2015)

W M Waller, S Karboyan, MJ Uren, KB Lee, PA Houston, DJ Wallis, I Guiney, CJ Humphreys, M Kuball, " Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs", Electron Devices, IEEE Transactions on 62 (8), 2464-2469 (2015)

Z.H. Zaidi, K.B. Lee, I. Guiney, H. Qian, S. Jiang, D.J. Wallis, C.J. Humphreys and P.A. Houston, " Enhancement Mode operation in AlInN/GaN MISHEMTs on Si Substrates using Fluorine Implant", Semiconductor Science and Technology 30 (10), 105007 (2015)

K B. Lee, I Guiney, S Jiang, Z H. Zaidi, H Qian, D J. Wallis, M J. Uren, C J. Humphreys and P A. Houston, " Enhancement-mode Metal-insulator-semiconductor GaN/ AlInN/GaN Heterostructure Field Effect Transistors on Si with a Threshold Voltage of +3.0 V and Blocking Voltage Above 1000 V", Applied Physics Express 8(3), 036502 (2015)

 

Publications in 2014:

Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA, “Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method”, APL Mat. 2 (2014) 126101.

Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE, and Oliver RA, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem”, Appl. Phys. Lett. 105 (2014) 112110.

Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO, and Sahonta SL, “Structure and strain relaxation effects of defects in In x Ga1x N epilayers”, J. Appl. Phys. 116 (2014) 103513.

Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ, and Humphreys CJ, “The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures”, Appl. Phys. Lett 105 (2014) 092106.

Badcock TJ, Dawson P, Davies MJ, Oliver RA, Kappers MJ and Humphreys CJ, “Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures”, phys. stat. sol. (C), 11 issue 3-4 (2014) 738-741.

Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ, “Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells”, J. Appl. Phys. 115 (2014) 113505.

Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW, “Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures”, J. Phys. D – Applied Physics 47 (2014) 135107.

Davies MJ, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ, “Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures”, phys. stat. sol. (C), 11 issue 3-4 (2014) 710-713.

Davies MJ, Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ, “High excitation density recombination dynamics in InGaN/GaN quantum well structures”, phys. stat. sol. (C), 11 issue 3-4 (2014) 694-697.

Davies MJ, Dawson P, Massabuau FC-P, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ, “The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells”, phys. stat. sol. (C), 11 issue 3-4 (2014) 750-753.

Emery RM, Zhu T, Oehler F, Reid BPL, Taylor RA, Kappers MJ and Oliver RA, “Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy”, phys. stat. sol. (C), 11 issue 3-4 (2014) 698-701.

Tian PF, McKendry JJD, Gong Z, Zang SL, Watson S, Zhu D, Watson IM, Gu ED, Kelly AE, Humphreys CJ and Daswon MD, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates”, J. Appl. Phys., 115 (2014) 033112.

Massabuau FC-P, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA, “The impact of growth parameters on trench defects in InGaN/GaN quantum wells”, phys. stat. sol. (A), 11 issue 4 (2014) 740-743.

Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA, “The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method”, J. Cryst. Growth 386 (2014) 88-93.

Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C, “Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN”, Microscopy and Microanalysis, 20 issue 01 (2014) pp 55-60.

Reid BPL, Zhu T, Chan CCS, Kocher C, Oehler F, Emery RM, Kappers MJ, Oliver RA and Taylor RA, “High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics”, phys. stat. sol. (C), 11 issue 3-4 (2014) 702-705.

Sutherland D, Oehler F, Zhu T, Griffiths JT, Badcock TJ, Dawson P, Emery RM, Kappers MJ, Humphreys CJ and Oliver RA, “An investigation into defect reduction techniques for growth of non-polar GaN on sapphire”, phys. stat. sol. (C), 11 issue 3-4 (2014) 541-544.

 

Publications in 2013:

Aharonovich I, Woolf A, Russell KJH, Zhu T, Niu N, Kappers MJ, Oliver RA and Hu EL, “Low threshold, room-temperature microdisk lasers in the blue spectral range”, Appl. Phys. Lett. 103 (2013) 021112.

Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ, “Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells”, Jpn. J. Appl. Phys. 52 (2013) 08JL12.

Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ, “Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures”, Jpn. J. Appl. Phys. 52 (2013) 08JK10.

Boulbar ED, Gîrgel I, Lewins CJ, Edwards PR, Martin RW, Šatka A, Allsopp DWE and Shields PA, “Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by MOVPE on etched GaN nanorod arrays,” J. Appl. Phys. 114 (2013) 094302.

Bruckbauer J, Edwards PR, Bai J, Wang T and Martin RW, “Probing light emission from quantum wells within a single nanorod”, Nanotechnology 6 (2013) 365704.

Chan CCS, Reid BPL, Taylor RA, Zhuang YD, Shields PA, Allsopp DWE and Jia W, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102 (2013) 111906.

Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ, “High Excitation Carrier Density Recombination Dynamics of InGaN/GaN Quantum Well Structures: Possible Relevance to Efficiency Droop”, Appl. Phys. Lett. 102 (2013) 022106.

Findlay NJ, Orofino-Pena C, Bruckbauer J, Elmasly SET, Arumugam S, Inigo AR, Kanibolotsky AL, Martin RW and Skabara PJ, “Linear oligofluorene-BODIPY structures for fluorescence applications”, J. Mat. Chem. C 1 (2013) 2249-2256.

Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD, “The dissociation of the [a plus c] dislocation in GaN”, Phil. Mag. 93 (2013) 28-30.

Huang C-N, Shields PA, Allsopp DWE and Trampert A, “Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal–organic vapour phase epitaxy,” Philos. Mag.  93 (2013) 3154-3166.

Hugues M, Shields PA, Sacconi F, Mexis M, Auf der Maur M, Cooke M,  Dineen M, Di Carlo A, Allsopp DWE and Zúñiga-Pérez J, “Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates,” J. Appl. Phys. 114 (2013) 084307.

Humphreys CJ, “The significance of Bragg’s law in electron diffraction and microscopy, and Bragg’s second law”, Acta Cryst. A 69 (2013) 45-50.

Jiang Q, Allsopp DWE, Bowen CR and Wang WN, “The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si (111) substrates,” Semicond. Sci. and Technol. 28 (2013) 094010.

Jiang Q, Lewins CJ,  Allsopp DWE, Bowen CR, Wang WN, Satka A, Priesol J, and Uherek F, “Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer,” Jpn. J. Appl. Phys. 52 (2013) 061002.

Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA, “The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption”, J. Appl. Phys. 113 (2013) 063503.

Le Boulbar ED, Girgel I, Lewins CJ, Edwards PR, Martin RW, Satka A, Allsopp DWE and Shields PA, “Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays”, J. Appl. Phys. 114 (2013) 094302.

Lewins CJ, Allsopp DWE, Shields PA, Gao X, Humphreys CJ and Wang WN, “Light Extracting Properties of Buried Photonic Quasi-crystal Slabs in InGaN/GaN LEDs,” J. Display Technol. vol. 9 (2013) 333-338.

Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B, “High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance”, Appl. Phys. Exp. 6 (2013) 022102.

Massabuau FC-P; Trinh-Xuan L, Lodie D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA, “Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells”, J. Appl. Phys. 113 (2013) 073505.

Massabuau FC-P; Trinh-Xuan L, Lodie D, Sahonta S-L, Rhode S, Thrush EJ, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA, “Towards a better understanding of trench defects in InGaN/GaN quantum wells”, J. Appl. Phys. Conference Series 471 (2013) 012042.

Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA, “The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method”,  J. Cryst. Growth 368 (2014) 88-93.

Meneghini M, Trivellin N, Berti M, Cesca T, Gasparotto A, Vinattieri A, Bogani F, Zhu D, Humphreys CJ, Meneghesso G and Zanoni E, “Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs”,  GaN Materials and Devices 8625 (2013) 86251P.

Meneghini M, Vaccari S, Garbujo A, Travellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E, “Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-based Light-Emitting Diodes with Colour Coded Quantum Wells”, Jpn J. Appl. Phys. 52 (2013) 08JG09.

Oehler F, Vickers ME, Kappers MJ and Oliver RA, “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction”, J. Appl. Phys. 114 (2013) 053520.

Oehler F, Vickers M, Kappers MJ, Humphreys CJ and Oliver RA, “Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds”, Jpn. J. Appl. Phys. 52 (2013) 08JB29.

Oehler F, Vickers M, Kappers MJ, Humphreys CJ and Oliver RA, “Strain state characterisation of GaN based compounds by XRD and precise alloy content determination”, Jpn. J. Appl. Phys. 52 (2013) 08JB29.

Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA, “Surface morphology of homoepitaxial c-plane GaN: hillocks and ridges”, J. Cryst. Growth 383 (2013) 12-18.

Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ, “The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes”,  Appl. Phys. Lett.  103 (2013) 141114

Priesol J, Satka A, Uherek F, Donoval D, Shields PA and D.W.E. Allsopp DWE, “Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method,” Appl. Surface Sci. 269 (2013) 155-160  (2013).

Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA, “Mg Doping Affects Dislocation Core Structures in GaN”, Phys. Rev. Lett. 111 (2013) 025502.

Sahonta S-L, Kappers MJ, Zhu D, Putchler TJ, Zhu T and Bennett SE, “Properties of trench deffects in InGaN/GaN quantum well structures”, phys. stat. sol. A 210 (2013) 195-198.

Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, Humphreys CJ and Martin RW, “Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates”, Semiconductor Science and Technology 28 (2013) 065011.

Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD, “Nanosacle-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates”, Appl. Phys. Lett. 25 (2013) 253302.

Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ, “Measuring the composition of AlGaN layers in GaN based structures on 150 mm Si substrates using (2 0 5) reciprocal space maps”, Semiconductor Science and Technology 28 (2013) 094006.

Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA, “Elastic constants and critical thickness of ScGaN ans ScAlN”, J. Appl. Phys. 114 (2013) 243516.

Zhang SY, Holec D, Fu WY, Humphreys CJ and Moram MA, “Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides”, J. Appl. Phys. 114 (2013) 133510.

Zhang SY, Zhang YC, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ, “Interfacial Structure and Chemistry of GaN on Ge”, Phys. Rev. Lett. 111 (3013) 256101.

Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ, “The effect of dislocations on the efficiency of InGaN/GaN solar cells”, Solar Energy Materials and Solar Cells 117 (2013) 279-284.

Zhu D, Wallis DJ and Humphreys CJ, “Prospects of III-nitride optoelectronics grown on Si”, Rep. Prog. Phys. 76 (2013) 106501.

Zhu T, Sutherland D, Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Oliver RA, “Defect reduction in semi-polar (11-22) gallium nitride grown using epitaxial lateral overgrowth”, Jpn. J. Appl. Phys. 52 (2013) 08JB01.

Zhu T, Oehler F, Reid BPL, Emery RM, Taylor RA, Kappers MJ and Oliver RA, “Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy”, Appl. Phys. Lett. 103 (2013) 251905.

Zhuang YD, Lewins CJ, Lis S, Shields PA and D.W.E. Allsopp DWE, “Fabrication and Characterization of Light Emitting Diodes Comprising Highly Ordered Arrays of Emissive InGaN/GaN Nanorods”, IEEE Photon. Technol. Lett. 25 (2013) 1047-1049.

Zhuang YD, Lis S, Bruckbauer J, O’Kane SEJ, Shields PA, Edwards PR, Sarma J, Martin RW and Allsopp DWE, “Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells,” Jpn. J. Appl. Phys. 52 (2013) 08JE11.

 

Publications in 2012:

Adikaari AAD, Etchart I, Guéring P-H, Bérard M, Silva SRP, Cheetham AK and Curry RJ, “Near infrared up-conversion in organic photovoltaic devices using efficient rare-earth doped phosphor”, J. Appl. Phys. 111 (2012) 094502.

Amari H, Kappers MJ, Humphreys CJ, Chèze C and Thomas Walther, “Measurement of the Al content in AlGaN epitaxial layers by combined energy-dispersive X-ray and electron energy-loss spectroscopy in a transmission electron microscope”, phys. stat. sol. C 9 (2012) 1079-1082.

Badcock TJ, Dawson P, Kappers MJ and Humphreys CJ, “Modification of carrier localisation in basal plane stacking faults: the effect of Si doping in a-plane GaN”, phys. stat. sol. 249 (2012) 498-502.

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ, “Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells”, J. Appl. Phys. 112 (2012) 013534.

Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ, “Exciton confinement in narrow non-polar InGaN/GaN quantum wells on r-plane sapphire”, phys. stat. sol. 249 (2012) 494-497.

Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA, “Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy”, J. Appl. Phys. 111 (2012) 053508.

Chan CCS, Shields PA, Holmes MJ, Zhuang YD, Allsopp DWE and Taylor RA, “Optical studies of quantum dot-like emission from localisation centres in InGaN/GaN nanorod array LEDs,” phys. stat. sol. C – Current Topics in Solid State Physics 9 (2012) 635-638.

Edwards PR, Jagadamma LK, Bruckbauer J, Liu C, Shields P, Allsopp D, Wang T and Martin RW, “High-Resolution Cathodoluminescence Hyperspectral Imaging of Nitride Nanostructures,” Microsc. Microanal. 18 (2012) 1212–1219.

Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ, “Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements”, Thin Solid Films 520 (2012) 3064-3070.

Elsherif OS, Vernon-Parry KD, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ, “Characterisation of defects on p-GaN by admittance spectroscopy”, Physica B – Condensed Matter 407 (2012) 2960-2963.

Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ, “The consequences of high injected carrier densities on carrier localisation and efficiency droop in InGaN/GaN quantum well structures”, J. Appl. Phys. 111 (2012) 083512.

Kappers MJ, Badcock TJ, Hao R, Moram MA, Hammersley S, Dawson P and Humphreys CJ, “On the origin of blue-green emission from heteroeptaxial nonpolar a-plane InGaN quantum wells”, phys. stat. sol. C 9 (2012) 465-468.

Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA, “Growth, microstructure and morphology of epitaxial ScGaN films”, phys. stat. sol. A 209 33-40.

Lethy KJ, Edwards PR, Liu C, Shields PA, Allsopp DWE and Martin RW, “Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE”, Semiconductor Science and Technology 27 (2012) 085010 (8 pages).

Liu LZ-Y, McAleese C, Sridhara Rao DV, Kappers MJ and Humphreys CJ, “Electron Holography of an in-situ biased GaN-based LED”, phys. stat. sol. C 9 (2012) 704-707.

Massabuau FCP, Sahonta SL, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA, “Morphological, structural, and emission characterization of trench defects in InGaN quantum well structures”, Appl. Phys. Lett. 101 (2012) 212107.

Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys CJ, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E, “Analysis of defect-related localized emission processes in InGaN/GaN based LEDs”, IEEE Transactions on Electron Devices 59 (2012) 1416.

Niu N, Liu T-L, Aharonovich I, Russell KJ, Woolf A, Sadler TC, El-Ella HAR, Kappers MJ, Oliver RA and Hu EL, “A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity”, Appl. Phys. Lett. 101 (2012) 161105. (Selected for cover illustration).

Phillips WA, Thrush EJ, Zhang Y and Humphreys CJ, “Studies of efficiency droop in GaN based LEDs”, phys. stat. sol. C 9 (2012) 765-769.

Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ, “Structure and chemistry of the Si(111)/AlN interface”, Appl. Phys. Lett. 100 (2012) 011910.

Shields PA, Charlton MDB, Lewins CJ, Gao X, Allsopp DWE, Wang WN and Humphreys B, “Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures”, phys. stat. sol. (a) 209 (2012) 451.

Shields P, Hugues M, Zuniga-Perez J, Cooke M, Dineen M, Wang W, Causa F and Allsopp D, “Fabrication and properties of etched GaN nanorods”, phys. stat. sol. (c) 9 (2012) 631.

Taylor E, Edwards PR and Martin RW, “Colorimetry and efficiency of white LEDs: Spectral width dependence”, phys. stat. sol. (a) 209 (2012) 461-464.

Thirumurugan A, Li W and Cheetham AK, “Hybrid bismuth 2,6-pyridinedicarboxylates: Assembly of coordination molecular units into coordination polymers, CO2 sorption and photoluminescent properties”, Dalton Trans. 41 (2012) 4126-4134.

Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ, “Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering”, J. Appl. Phys. 111 (2012) 043502.

Zhu D and Humphreys CJ, “Lighting” (Invited book chapter), in Fundamentals of Materials for Energy and Environmental Sustainability, eds. DS Ginley and D D Cahen, Materials Research Society and Cambridge University Press (2012) 474-490.

Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G,  Couillard M, Botton GA, Sahonta S-L and Humphreys CJ, “High-efficiency InGaN/GaN quantum well structures on large area silicon substrates”, phys. stat. sol. A 209 (2012) 13-16.

Zhu T, El-Ella HAR, Reid B, Holmes MJ, Taylor RA, Kappers MJ and Oliver RA, “Growth and optical characterisation of multilayers of InGaN quantum dots”, J. Cryst. Growth 338 (2012) 262-266.

Zhu T and Oliver RA, “Unintentional doping in GaN”, Phys. Chem. Chem. Phys. 14 (2012) 9558-9573.

 

Publications in 2011:

Aharonovich I, Niu N, Rol F, Russell KJ, Woolf A, El-Ella HAR, Kappers MJ, Oliver RA and Hu EL, “Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities”, Appl. Phys. Lett. 99 (2011) 111111.

Amari H, Lari L, Zhang HY, Geelhaar L, Chèze C, Kappers MJ, McAleese C, Humphreys CJ and Walther T, “Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope”, J. Phys. – Conference Series 326 (2011) 012028.

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ, “The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates”, Jpn J. Appl. Phys. 50 (2011) 080201.

Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ, “The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates”, phys. stat. sol.(a) 208 (2011) 1529-1531.

Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ, “Properties of surface-pit related emission in a-plane InGaN/GaN quantum wells grown on r-plane sapphire”, phys. stat. sol. (c) 8 (2011) 2179.

Bayer BC, Zhang C, Blume R, Yan F, Fouquet M, Wirth CT, Weatherup RS, Lin L, Baehtz C, Oliver RA, Knop-Gericke A, Schlögl R, Hofmann S and Robertson J, “In-situ study of growth of carbon nanotube forests on conductive CoSi2 support”, J. Appl. Phys. 109 (2011)  114314.

Bayer BC, Hofmann S, Castellarin-Cudia C, Blume R, Baehtz C, Esconjauregui S, Wirth CT, Oliver RA, Ducati C, Knop-Gericke A, Schlogl R, Goldoni A, Cepek C and Robertson J, “Support−Catalyst−Gas Interactions during Carbon Nanotube Growth on Metallic Ta Films”, J. Phys. Chem. C 115 (2011) 4359.

Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA, “Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice”, Ultramicroscopy 111 (2011) 207.

Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GDW and Oliver RA, “Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells”, Appl. Phys. Lett. 99 (2011) 021906.

Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA, “Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice”, Ultramicroscopy 111 (2011) 207-211.

Bruckbauer J, Edwards PR, Wang T and Martin RW, “High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures”, Appl. Phys. Lett. 98 (2011) 141908.

Chee AKW, Broom RF, Humphreys CJ and Bosch EGT, “A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations”, J. Appl. Phys. 109 (2011) 013109.

Edwards PR and Martin RW, “Cathodoluminescence nano-characterisation of semiconductors”, Semiconductor Science and Technology 26 (2011) 064005.

El-Ella HAR, Rol F, Kappers MJ, Russell KJ, Hu EL and Oliver RA, “Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks”,  Appl. Phys. Lett. 98 (2011) 131909.

El-Ella HAR, Rol F, Collins DP, Kappers MJ, Taylor RA, Hu EL and Oliver RA, “InGaN super-lattice growth for fabrication of quantum dot containing microdisks”, J. Cryst. Growth 321 (2011) 113.

Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ, “Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements”, Thin Solid Films (2011).

Etchart I, Bérard M, Laroche M, Huignard A, Hernández I, Gillin WP, Curry RJ and Cheetham AK, “Efficient White Light Emission by Upconversion in Yb3+-, Er3+- and Tm3+-doped Y2BaZnO5”, Chem. Commun. 47 (2011) 6263-6265.

Etchart I, Huignard A, Bérard M, Curry R, Nordin MN, Gillin W and Cheetham AK, “Oxide phosphors for light upconversion; Yb3+ and Ho3+ co-doped Ln2BaZnO5 (Ln=Y, Gd)”, J. Mater. Chem. 21 (2011) 1387-1394.

Etchart I, Huignard A, Bérard M, Curry R, Nordin MN, Gillin W and Cheetham AK, “Oxide phosphors for light upconversion; Yb3+ and Tm3+ co-doped Ln2BaZnO5 (Ln=Y, Gd)”, J. Appl. Phys. 109 (2011) 063104.

Fu WY, Kappers MJ, Zhang YC, Humphreys CJ and Moram MA, “Dislocation climb in c-plane AlN films”, Appl. Phys. Express 4 (2011) 065503.

Furman JD, Melot BC, Teat SJ, Michailovsky AA and Cheetham AK, “Towards enhanced ligand-centered photoluminescence in inorganic-organic frameworks for solid state lighting”, Phys. Chem. Chem. Phys. 13 (2011) 7622-7629.

Furman JD, Burwood RP, Tang M, Mikhailovsky AA and Cheetham AK, “Understanding ligand-centred photoluminescence through flexibility and bonding of anthraquinone inorganic-organic frameworks”, J. Mater. Chem. 21 (2011) 6595-6601.

Hammersley S, Badcock TJ, Watson-Parris D, Godfrey MJ, Dawson P, Kappers MJ and Humphreys CJ, “Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure, Temperature dependence of the efficiency droop in InGaN quantum wells”, phys. stat. sol. (c) 8 (2011) 2194.

Hao R, Kappers MJ, Moram MA and Humphreys CJ, “Defect reduction processes in heteroepitaxial non-polar a-plane GaN films”, J. Cryst. Growth 337 (2011) 81-86.

Holec D, Rachbaner R, KIener D, Cherns PD, Costa PMF, McAleese C, Mayrhofer PH and Humphreys CJ, “Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys”, Phys. Rev. B 83 (2011) 165122.

Holmes M J, Park YS, Wang X, Chan CCS, Jarjour AF, Taylor RA, Warner JH, Luo J, El-Ella HAR and Oliver RA, “Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns”, J. Appl. Phys. 109 (2011) 063515.

Holmes MJ, Park YS, Wang X, Chan CCS, Jarjour AF, Luo J, Warner JH, El-Ella HAR, Oliver RA and Taylor RA, “Optical studies on InxGa1-xN quantum disks”, Proceedings of SPIE 7937 (2011).

Kachkanov V, Dolbnya IP, O’Donnell KP, Martin RW, Edwards PR and Pereira S, “InGaN epilayer characterization by microfocused x-ray reciprocal space mapping”, Appl. Phys. Lett. 99 (2011) 181909.

Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ, “The effects of Si doping on dislocation movement and tensile stress in GaN”, J. Appl. Phys. 109 (2011) 073509.

Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ, Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’ [J. Appl. Phys. 109, 073509 (2011)]”, J. Appl. Phys. 110 (2011) 096102.

Oliver RA, “An introduction to scanning probe microscopy of semiconductors with case studies concerning gallium nitride and related materials” (Invited book chapter). Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization (2011).

Petrov M, Holec D, Lymperakis L, Neugebauer J and Humphreys CJ, “Strain-induced effects on the electronic structure and N-edge ELNES of wurtzite A1N and AlxGa1-xN”, J. Phys. – Conference Series 326 (2011).

Sadler TC, Kappers MJ and Oliver RA, “The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy”, J. Cryst. Growth 314 (2011) 13.

Sadler TC, Kappers MJ and Oliver RA, “The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy”, J. Cryst. Growth 331 (2011) 4.

Sadler TC, Massabuau F, Kappers MJ and Oliver RA, “The negligible effects of miscut on indium aluminium nitride growth”, phys. stat. sol. (c) 9 (2011) 461.

Shields PA and Allsopp DWE, “Nanoimprint lithography resist profile inversion for lift-off applications”, Microelectron. Eng. 88 (2011) 3011-3014.

Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ, “Carrier localization mechanisms in InxGa1−xN/GaN quantum wells”, Phys. Rev. B 83 (2011) 115321.

Zhang Y, Fu W-Y, Humphreys CJ, and Lieten RR, “Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate”, Applied Physics Express 4 (2011) 091001.

Zhu D, McAleese C, Häberlen M, Salcianu CO, Thrush EJ, Kappers MJ, Phillips WA Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys CJ, “Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrate”, J. Appl. Phys. 109 (2011) 014502.

 

Publications in 2010:

Badcock TJ, Dawson P, Kappers MJ and Humphreys CJ, “Carrier dynamics in a-plane GaN/AlGaN quantum wells grown on r-plane sapphire substrates”, phys. stat. sol. (c) 7 (2010) 1894.

Badcock TJ, Häberlen M, Kappers MJ, Moram MA, Dawson P, Humphreys CJ and Oliver RA “Effect of the overgrowth conditions on the optical properties of epitaxially overgrown a-plane GaN” phys. stat. sol. (c) 7 (2010) 2088.

Badcock TJ, Schulz S, Moram MA, Kappers MJ, Dawson P, O’Reilly EP and Humphreys CJ, “Characterising the degree of polarisation anisotropy in an a-plane GaN film”, phys. stat. sol. (c) 7 (2010) 1897.

Badcock TJ, Kappers MJ, Humphreys CJ and Dawson P, “Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults”, phys. stat. sol. (c) 7 (2010) 1894.

Barnard JS, Bennett SE, Oliver RA, Kappers MJ and Humphreys CJ “The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials”, J. Phys. – Conf. Ser. 209 (2010) 012019.

Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA “Atom probe extended to AlGaN: Three-dimensional imaging of pyramidal defects in a Mg-doped AlGaN/GaN superlattice”. Submitted to phys. stat. sol. (c) 7 (2010) 1781.

Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA “Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS”, J. Phys. – Conf. Ser. 209 (2010) 012014.

Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA “Imaging dislocations in gallium nitride across broad areas using atomic force microscopy”, Rev. Sci Inst. 81 (2010) 063701.

Brice HR, Sadler TC, Kappers MJ and Oliver RA “The Effect of Annealing on the Surface Morphology of Strained and Unstrained InxAl1‑xN Thin Films”, J. Cryst. Growth 312 (2010) 1800.

El-Ella HWAR, Sadler TC, Kappers MJ and Oliver RA “Microstructural Characterisation of a Prototype Layer Structure for a GaN-based Photonic Crystal Cavity”, J. Phys. – Conf. Ser. 209 (2010) 012016.

Etchart I, Huignard A, Bérard M, Curry R, Nordin MN, Gillin W and Cheetham AK, “Oxide phosphors for light upconversion; Yb3+ and Er3+ co-doped Ln2BaZnO5 (Ln=Y, Gd)”, J. Mater. Chem. 20 (2010) 3989-3994.

Etchart I, Huignard A, Bérard M, Curry R, Nordin MN, Gillin W and Cheetham AK, “Oxide phosphors for light upconversion; Yb3+ and Ho3+ co-doped Ln2BaZnO5 (Ln=Y, Gd)”, J. Mater. Chem. (available on web).

Furman JD, Warner AY, Teat SJ, Mikhailovsky AA and Cheetham AK, “Tunable, ligand-based emission from inorganic-organic frameworks: a new approach to phosphors for solid state lighting and other applications”, Chem. Mater. 22 (2010) 2255-2260.

Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA “Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth”, J. Appl. Phys. 108 (2010) 033523.

Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ and Humphreys CJ, “Dislocation reduction in GaN grown on Si (111) using a strain-driven 3D GaN interlayer”, phys. stat. sol. B 247 (2010) 1753.

Kappers MJ, Moram MA, Rao SDV, McAleese C and Humphreys CJ, “Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire”, J. Cryst. Growth 312 (2010) 363.

Kurushima T, Gundiah G, Shimomura Y, Mikami M, Kijima N and Cheetham AK, “Synthesis of Eu2+-activated MYSi4N7 (M=Ca, Sr, Ba) and SrYSi4-xAlxN7-xOx (x=0-1) green phosphors by carbothermal reduction and nitridation”, J. Electrochem. Soc. 157 (2010) J64-J68.

Liu C, Shields PA, Chen Q, Allsopp DWE, Wang WN, Bowen CR, Phan T-L and Cherns D, “Variations in mechanisms of selective area growth of GaN on nano-patterned substrates by MOVPE”, phys. stat. sol. C 7 (2010) 32-35.

Liu LZY, Rao DVS, Kappers MJ, Humphreys CJ and Geiger D, “Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography”, J. Phys. – Conf. Ser. 209 (2010) 012012.

Lorenz K, Magalhaes S, Franco N, Barradas NP, Darakchieva V, Alves E, Pereira S, Correia MR, Munnik F, Martin RW, O’Donnell KP and Watson IM, “Al1-xInxN/GaN bilayers: Structure, morphology and optical properties”, phys. stat. sol. (b) 247 (2010) 1740-1746.

Moram MA, Gabbai UE, Sadler TC, Kappers MJ and Oliver RA, “The use of spatial analysis techniques in defect and nanostructure studies”, J. Electron. Mater. 39 (2010) 656.

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ, “Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy”, J. Phys. D – Appl. Phys. 43 (2010) 055303.

Moram MA, Kappers MJ and Humphreys CJ, “Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers”, phys. stat. sol. (c) 7 (2010) 1778.

Moram MA, “Energy-efficient lighting – challenges for the future”, Institute of Physics Newsletter, January 2010.

Moram MA, “LEDs- lighting up a brighter future!”, Catalyst, January 2010.

Parsons KP, “The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field”, Nanotechnology 21 (2010) 105303.

Oliver RA, Bennett SE, Sumner J, Kappers MJ and Humphreys CJ, “Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth GaN”, J. Phys. – Conf. Ser. 209 (2010) 012049.

Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ, “Microstructural origins of localisation in InGaN quantum wells”, (Invited article).  J. Phys. D 43 (2010) 354003.

Réveret F, Bejtka K, Edwards PR, Chenot S, Sellers IR, Disseix P, Vasson A, Leymarie J, Duboz JY, Leroux M, Semond F and Martin RW, “Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods”, J. Appl. Phys. 108, (2010) 043524.

Roqan IS, O’Donnell KP, Martin RW, Edwards PR, Song SF, Vantomme A, Lorenz K, Alves E and Boćkowski M, “Identification of the prime optical center in  GaN:Eu3+”, Phys. Rev. B 81 (2010) 085209.

Sadler TC, Kappers MJ and Oliver RA, “Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors”, J. Phys. – Conf. Ser. 209 (2010) 012015.

Shields PA, Liu C, Allsopp DWE and Wang WN, “Advances in nano-enabled GaN optoelectronic devices”, Meeting of the United Kingdom Nitride Consortium (UKNC), Cork Ireland, January 2010.

Taylor RA, Collins DP, Holmes M, Oliver RA, Sadler TC, Kappers MJ and Humphreys CJ, “Micro-reflectance measurements on nitride DBRs using a non-linear photonic crystal fiber”, phys. stat. sol (c) 7 (2010)1866.

Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ, “Cavity Enhancement of Single Quantum Dot Emission in the Blue”, Nanoscale Research Letters 5 (2010) 608.

Watson-Parris D, Godfrey MJ, Oliver RA, Dawson P, Galtrey MJ, Kappers MJ and Humphreys CJ “Energy Landscape and Carrier Wave-Functions in InGaN/GaN Quantum Wells”, phys. stat. sol (c) 7 (2010) 2255.

Xiong C, Edwards PR, Christmann G, Gu E, Dawson MD, Baumberg JJ, Martin RW and Watson IM, “High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers”, Semiconductor Science and Technology 25 (2010) 032001 (5 pages).

Xiong C, Rizzi F, Bejtka K, Edwards PR, Gu E, Dawson MD, Martin RW and Watson IM, “Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off”, Superlattices and Microstructures 47 (2010) 129-133.

Yu KM, Novikov SV, Broesler R, Staddon CR, Hawkridge M, Liliental-Weber Z, Demchenko IN, Denlinger JD, Kao VM, Luckert F, Martin RW, Walukiewicz W and Foxon CT, “Non-equilibrium GaNAs Alloys with band gap ranging from 0.8-3.4 Ev”, phys. stat. sol. (c) 7-8 (2010) 1847-1849.

Zhu D, McAleese C, Häberlen M, Salcianu CO, Thrush EJ, Kappers MJ, Phillips WA, Lane P, Kane M, Wallis DJ, Martin T, Astles M and Humphreys CJ, “InGaN/GaN LEDs grown on Si (111):dependence of device performance on threading dislocation density and emission wavelength”, phys. stat. sol. (c) 7 (2010) 2168.

Zhu T, Johnston CF, Häberlen M, Kappers MJ and Oliver RA, “Characterization of unintentional doping in non-polar GaN”, J. Appl. Phys. 107 (2010) 023503.

Zhu T, Kappers MJ, Moram MA and Oliver RA, “Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy”, phys. stat. sol. (c) 7 (2010) 1875.

Zhu T, Moram MA, Sridhara Rao DV, Li H, Kappers MJ and Oliver RA, “The impact of ScOxNy interlayers on unintentional doping and threading dislocations in GaN”, J. Phys. – Conference Series 209 (2010) 012067.

 

Publications in 2009:

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ, “Studies of the optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates”, J. Appl. Phys., 105 (2009) 123112.

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ, “Optical polarisation anisotropy in a-plane GaN/AlGaN multiple quantum well structures”, phys. stat. sol. (c) 6 (2009) S523.

Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B, “Carrier distribution in InGaN/GaN tricolour multiple quantum well light emitting diodes”, Appl. Phys. Lett., 95 (2009) 151103.

Collins D, Jarjour A, Hadjipanayi M, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A, “Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot”, Nanotechnology 20 (2009) 245702.

Collins DP, Jarjour AF, Taylor RA, Hadjipanayi M, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A, “Non-linear excitation and correlation studies of single InGaN quantum dots”, phys. stat. sol (c), 6 (2009) 864.

Das Bakshi S, Sumner J, Kappers MJ and Oliver RA, “The influence of coalescence time on unintentional doping in GaN/sapphire”, J. Cryst. Growth. 311 (2009) 232.

Hall JL, Moram MA, Sanchez AM, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP, “Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy”, J. Cryst. Growth, 311 (2009) 2054-2057.

Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT, “Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy”, J. Appl. Phys., 106 (2009) 013720.

Holec D, Rao DVS and Humphreys CJ, “HANSIS software tool for the automated analysis of HOLZ lines”, Ultramicroscopy 109 (2009) 837.

Hylton NP, Dawson P, Johnston CF, Kappers MJ, Hollander JL, McAleese C and Humphreys CJ, “Optical and microstructural properties of semi-polar (11-22) quantum well structures”, phys. Stat. sol. (a) 206 (2009) 2510.

Jarjour AF, Oliver RA and Taylor RA “Nitride-based quantum dots for single photon source applications”, (Invited feature article) phys. stat. sol. (a) 206 (2009) 2510.

Johnston CF, Kappers MJ and Humphreys CJ, “Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method”, J. Appl. Phys., 105 (2009) 073102.

Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ, “Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire”, J. Cryst. Growth. 311 (2009) 3295-3299.

Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ, “Defect reduction in non-polar (11 0) GaN grown on (1 02) sapphire” phys. stat. sol (a), 206 (2009) 1190-1193.

Johnston CF, Moram MA, Kappers MJ and Humphreys CJ, “Defect reduction in (11 2) semipolar GaN grown on m-plane sapphire using ScN interlayers”, Appl. Phys. Lett., 94 (2009) 161109.

Markaki AE, Knowles KM, Oliver RA and Gholinia A, “Surface terracing on ferritic stainless steel fibres and potential relevance to in-vitro cell growth”, Phil. Mag., 89 (2009) 2285.

Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ, “Understanding X-ray diffraction of nonpolar gallium nitride films”, J. Appl. Phys., 105 (2009) 113501.

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ, “Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers”, J. Cryst. Growth. 311 (2009) 3239.

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ, “The effects of film surface roughness on X-ray diffraction of nonpolar gallium nitride films” Journal of Physics D-Applied Physics, 42 (2009) 135407.

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ, “Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction”, Physica B-Condensed Matter, 404 (2009) 2189.

Moram MA, Gabbai UE, Sadler TC, Kappers MJ and Oliver RA “The use of spatial analysis techniques in defect and nanostructure studies”, Journal of Electronic Materials 39 (2009) 656.

Moram MA, Ghedia CS, Rao DVS, Zhang Y, Barnard JS, Kappers MJ and Humphreys CJ, “On the origin of threading dislocations in GaN films”, J. Appl. Phys. 106 (2009) 073513.

Moram MA , Oliver RA, Kappers MJ and Humphreys CJ, “The spatial distribution of threading dislocations in c-plane gallium nitride films”, Adv. Mat. 21 (2009) 3941.

Moram MA, Zhang Y, Kappers MJ, Joyce TB, Chalker PR and Humphreys CJ, “Structural properties of wurtzite-like ScGaN films grown by NH3-MBE”, J. Appl. Phys. 106 (2009) 113533.

Moss DM, Akinov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ, “Coherent terahertz acoustic vibrations in polar and semi-polar gallium nitride-based superlattices”, Appl. Phys. Lett., 94 (2009) 011909.

Oliver RA, Das Bakshi S, Sumner J and Kappers MJ, “Scanning capacitance microscopy as a tool for the assessment of unintentional doping in GaN”, phys. stat. sol. (c) 6 (2009) S980.

Oliver RA, Sumner J , Kappers MJ and Humphreys CJ, “Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images”. J. Appl. Phys. 106 (2009) 054319.

Rao DVS, McLaughlin K, Kappers MJ and Humphreys CJ, “Lattice distortions in GaN on sapphire using the CBED-HOLZ technique”, Ultramicroscopy, 109 (2009) 1250-1255.

Rao DVS, Kappers MJ, McAleese C, Zhu T, Zhu D and Humphreys CJ, “Microstructural study of AlGaN/AlN buffer with 3D GaN interlayer”, Proceedings of the XVth International Workshop on Physics of Semiconductor Devices (IWPSD), (2009).

Richards B, Tsang YH, Binks DJ, Lousteau J and Jha A, “2 m Tm3+/Yb3+-doped tellurite fibre laser”, J Mater Sci.: Mater Electron, 20 (2009) 317-320.

Sadler TC, Kappers MJ and Oliver RA, “Optimisation of GaN overgrowth of InAlN for DBRs”, phys. stat. sol. (c), 6 (2009) S666.

Sadler TC, Kappers MJ and Oliver RA, “The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1-xN epilayers”, J. Cryst. Growth 311 (2009) 3380.

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ “Scanning capacitance microscopy studies of unintentional doping in ELOG GaN”, J. Appl. Phys. 106 (2009) 104503.

Tan WS, Kauer M, Hooper SE, Smeeton TM, Bousquet V, Rossetti M, Heffernan J, Xiu H, Humphreys CJ, “Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy”, ” phys. stat. sol (a), 206 (2009) 1205-1210.

Tsang YH and Binks DJ, “Record performance from a Q-switched Er,Yb:YVO4 laser”, Appl. Phys. B, 96 (2009) 11-17.

Zhu D, McAleese C, McLaughlin KK, Häberlen M, Salcianu CO, Thrush EJ, Kappers MJ, Phillips WA, Lane P, Wallis DJ, Martin T, Astles M, Thomas S, Pakes A, Heuken M and Humphreys CJ, “GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE”, Proc. SPIE Photonics West, (2009) 7231-44.

 

Publications in 2008:

Aslam F, Binks DJ, Graham D, Dawson P, Daniels S, Pickett N, O’Brien P, Byeon CC, Ko D-K and Lee J, “Electric Field Dependent Photoluminescence Studies of Photorefractive Polymer/Semiconductor Nanoparticle Composites”, J. Appl. Phys, 103 (2008) 093702.

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ, “Optical properties of GaN/AlGaN quantum wells grown on non-polar substrates”, Appl. Phys. Lett., 93, (2008) 101901.

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ, “Optical polarisation anisotropy in a-plane GaN/AlGaN multiple quantum well structures”, phys. stat. sol. (a), DOI 10.1002/pssc.2008807961.

Chee KWA, Rodenburg C and Humphreys CJ, “High resolution dopant profiling in the SEM, image widths and surface band-bending”, EMAG: Electron Microscopy and Analysis Group, 126 (2008) 12033.

Chee KWA, Rodenburg C and Humphreys CJ, “Quantitative dopant profiling in the SEM including surface states”, Microscopy of Semiconducting Materials 2007, 120 (2008) 407-410.

Cherns PD, McAleese C, Kappers MJ and Humphreys CJ, “Strain relaxation in an AlGaN/GaN quantum well system”, Microscopy of Semiconducting Materials 2007, 120 (2008) 25-28.

Corbett B, Zhu D, Roycroft B, Maaskant P, Akhter M, McAleese C, Kappers MJ and Humphreys CJ, “High brightness near-ultraviolet resonant light emitting diodes”, phys. stat. sol. (c) 5-6, (2008) 2056.

Datta R, McAleese C, Cherns P, Rayment FDG and Humphreys CJ, “Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer”, phys. stat. sol.(c), 5 (2008) 1743-1745.

Dawson P, Hylton NP, Kappers MJ, McAleese C and Humphreys CJ, “Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells”, phys. stat. sol., 5 (2008) 2270-2273.

Emiroglu D, Evans-Freeman J, Kappers MJ, McAleese C and Humphreys CJ, “High Resolution Laplace Deep Level Transient Spectroscopy Studies of Shallow and Deep Levels in n-GaN”, Proc. Commad, (Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney), 2008, 30-33.

Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ, “High resolution DLTS studies of a meta-stable hole trap in n-type GaN”, phys. stat. sol. 5 (2008) 1482-1484.

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson DJ, Saxey D and Cerezo A, “Three dimensional atom probe analysis of green- and blue- emitting InxGa1-xN/GaN multiple quantum well structures”, J. Appl. Phys., 104 (2008) 013524.

Galtrey MJ, Oliver RA, Kappers MJ, McAleese CM, Zhu D, Humphreys CJ, Clifton PH, Larson DJ and Cerezo A, “Atom probe reveals the structure of InGaN based quantum wells in three dimensions”, phys. stat. sol.B, 245 (2008), 861-867.

Galtrey MJ, Oliver RA, Kappers MJ, McAleese CM, Zhu D, Humphreys CJ, Clifton PH, Larson DJ and Cerezo A, “Compositional inhomogeneity of a high-efficiency InxGa1-xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe”, Appl. Phys. Lett. 92 (2008) 041904.

Holec D, Costa PMFJ, Cherns PD and Humphreys CJ, “A theoretical study of ELNES spectra of AlxGa1-xN using Wien2k and Telnes programs”, Computational Materials Science, 44 (2008) 91-96.

Holec D, Costa PMFJ, Cherns PD and Humphreys CJ, “Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs”, Micron 39 (2008) 690-697.

Holec D and Humphreys CJ, “Calculations of equilibrium critical thickness for non-polar wurtzite InGaN/GaN systems”, Materials Science Forum, 567-568 (2008) 209-212.

Holec D, Zhang Y, Rao DSV, Kappers MJ, McAleese C and Humphreys CJ, “Equilibrium critical thickness for misfit dislocations in III-nitrides”, J. Appl. Phys. 104 (2008) 123514.

Hollander JL, Kappers MJ, McAleese C and Humphreys CJ, “Improvements in a-plane GaN crystal quality by a two-step growth process”, Appl. Phys. Lett. 92 (2008) 101104.

Humphreys CJ, “Solid-State Lighting”, MRS Bulletin 33 (2008) 459-470.

Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ, “Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field”, Supperlattices and Microstructures 43 (2008) 431.

Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A, “Electrically-driven single InGaN/GaN quantum dot emission”, Appl. Phys. Lett,. 93 (2008) 233103.

Jiang N, Qiu JR, Humphreys CJ and Spence JCH, “Observation of long-range compositional fluctuations in glasses: implications for atomic and electronic structures”, Micron, 39 (2008) 698-702.

Johnston C, Kappers MJ, Barnard JS and Humphreys CJ, “Characterisation of non-polar (11-20) gallium nitride using TEM techniques”, EMAG: Electron Microscopy and Analysis Group, 126 (2008) 12084.

Johnston C, Kappers MJ, Barnard JS and Humphreys CJ, “Morphological study of (11-20) non-polar GaN grown on (1-102) r-plane sapphire”, phys. stat. sol. (c) 5 (2008) 1786-1788.

Kappers MJ, Hollander JL, Johnston CF, McAleese C, Duggi VSR, Sanchez A, Humphreys CJ, Badcock TJ and Dawson P, “Properties of non-polar a-plane GaN/AlGaN quantum wells”, Journal of Crystal Growth 310 (2008) 4983-4986.

Kappers MJ, Hollander JL, Johnston CF, McAleese C, Humphreys CJ, Badcock TJ and Dawson P, “A comparative study of non-polar (11-20) and polar (0001) GaN/AlGaN quantum wells”, Journal of Crystal Growth, 310, (2008) 4983.

Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ, “The role of strain in controlling the surface morphology of AlxGa1-xN following in situ treatment with SiH4 and NH3”, Appl. Surf. Sci., 254 (2008) 2124.

Leys M, Kai Cheng, Derluyn J, Degroote S, Germain M, Borghs G, Taylor CA and Dawson P, “Growth and characterization of unintentionally doped GaN grown on silicon (111) substrates” Journal of Crystal Growth, 310, (2008) 4888.

Moldovan G, Ong VSK, Kurniawan O, Kazemian P, Edwards PR and Humphreys CJ, “EBIC characterisation of diffusion and recombination of minority carriers in GaN-based LEDs”, Microscopy of Semiconducting Materials 2007, 120 (2008) 485-488.

Moram MA, Barber ZH and Humphreys CJ, “The effect of oxygen incorporation in sputtered scandium nitride films”, Thin Solid Films, 516 (2008) 8569-8572.

Moram MA, Novikov SV, Kent AJ, Norenberg C, Foxon CT and Humphreys CJ, “Growth of epitaxial thin films of scandium nitride on 100-oriented silicon”, J. Cryst. Growth, 310 (2008), 2746-2750.

Moram MA, Vickers ME, Kappers MJ and Humphreys CJ, “The effect of wafer curvature on X-ray rocking curves from gallium nitride films”, J. Appl. Phys. 103 (2008), 093528.

Moram MA, Zhang Y, Kappers MJ and Humphreys CJ, “Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers”, phys. stat. sol. (a) 205 (2008) 1064-1066.

Oliver RA, “Advances in AFM for the electrical characterization of semiconductors”, Invited paper, Reports on Progress in Physics 71 (2008), 076501.

Oliver RA, Das Bakshi S, Sumner J and Kappers MJ, “Scanning capacitance microscopy as a tool for the assessment of unintentional doping in GaN”, phys. stat. sol. (c), 6 (2008) S980.

Oliver RA, Galtrey MJ and Humphreys CJ, “High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN-based quantum well systems”, Materials Science and Technology (Invited paper) 24 (2008) 675-781.

Oliver RA, Jarjour AF, Taylor RA, Tahraoui A, Zhang A, Kappers MJ and Humphreys CJ, “Growth and assessment of InGaN quantum dots in a microcavity: a blue single photon source”, Mat. Sci. Eng. B, 147 (2008) 108.

Oliver RA, Kappers MJ and Humphreys CJ, “Gross well-width fluctuations in InGaN quantum wells”, phys. stat. sol. (c), 5 (2008), 1475.

Oliver RA, Kappers MJ, McAleese C, Datta R, Sumner J and Humphreys CJ, “The origin and reduction of dislocations in Gallium Nitride”, Journal of Materials Science: Electronic Materials, 19, S208.

Oliver RA, van der Laak NK, Kappers MJ and Humphreys CJ, “Insights into the growth mechanism of InxGa1-xN epitaxial nanostructures formed using a silane predose”, J. Cryst. Growth, 310 (2008), 3459.

Pereira SMD, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ, “Controlled integration of Nanocrystals in Inverted Hexagonal Nano-Pits at the Surface of Light-Emitting Heterostructures”, Advanced Materials, 20 (2008) 1038.

Richards B, Tsang YH, Binks DJ, Lousteau J and Jha A, “A Tm3+/Ho3+ co-doped tellurite fiber laser”, Optics Letters, 11 (2008) 1282-1284.

Richards B, Tsang YH, Binks DJ, Lousteau J and Jha A, “A Yb3+/Tm3+/Ho3+ triply-doped tellurite fibre laser”, Optic Express, 14 (2008) 16690.

Richards B, Tsang YH, Binks DJ, Lousteau J and Jha A, “Efficient ~2 μm Tm3+-doped tellurite fibre laser”, Optics Letters, 33 (2008) 402-404.

Rossetti M, Smeeton TM, Tan WS, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ, “Degradation of InGaN/GaN laser diodes analysed by microphotoluminescence mappings”, Appl. Phys. Lett., 92 (2008) 151110.

Salcianu CO, Thrush EJ, Plumb RG, Boyd AR, Rockenfeller O, Schmitz D, Heuken M and Humphreys CJ, “Palladium-based on-wafer electroluminescence studies of GaN-based LED structures”, phys. stat. sol. (c), 5 (2008) 2219-2221.

Sumner J, Das Bakshi S, Oliver RA, Kappers MJ and Humphreys CJ, “Unintentional Doping in GaN Assessed by Scanning Capacitance Microscopy”, phys. stat. sol., 245 (2008) 896-898.

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ, “Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride”, J. Vac. Sci. Technol., 26 (2008) 611-617.

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ, “Assessment of Scanning Spreading Resistance Microscopy for Application to n-type GaN”, phys. stat. sol., 5 (2008) 1652.

Xiu H, Thrush EJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ, “Degradation of III-nitride Laser Diodes Grown by Molecular Beam Epitaxy”, phys. stat. sol. (c), 5 (2008) 1447-1469.

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Liaten RR, Degroote S and Borghs G, “An initial exploration of GaN grown on a Ge-(111) substrate”, Microscopy of Semiconducting Materials 2007, 120 (2008) 61-64.

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Liaten RR, Degroote S and Borghs G, “Structural features in GaN grown on a Ge (III) substrate”, phys. stat. sol. (c), 5 (2008) 1802-1804.

Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA, “Degradation of GaN-based quantum well light emitting diodes”, Journal of Applied Physics, 103 (2008) 024501.

 

Publications in 2007:

Aslam F, Stevenson-Hill J, Binks DJ, Daniels S, Pickett NL and O’Brien P, “Effect of nanoparticle composition on the performance of photorefractive polymers”, Chem. Phys., 334 (2007) 45-52.

Cerezo A, Chang L, Clifton PH, Galtrey MJ, Gerstl SSA, Humphreys CJ, Müller M, Oliver RA Smith GDW and Wu YH “3D atom probe analysis of quantum well and quantum dot materials”, Microsc. Microanal., 13 (suppl 2) (2007) 1608-9 CD.

Cerezo A, Clifton PH, Galtrey MG, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M, “Review: Atom Probe Tomography Today”, Materials Today 10 (2007) 36.

Dawson P, Hylton P, Kappers MJ, McAleese C and Humphreys CJ, “Effects of Resonant LO Phonon Assisted Excitation on the Photoluminescence Spectra of InGaN/GaN Quantum Wells”, Proc ICNS 7, Las Vegas (2007).

Emiroglu D, Evans-Freeman J H, Kappers M, McAleese C, Humphreys C J, “Deep electronic states associated with a meta-stable hole trap in n-type GaN”, Physica B, Vol 401 (2007) 311-314.

Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes T, Bailey P, “Anisotropic strain relaxation in a-plane GaN quantum dots”, J. Appl. Phys 101 (2007) 063541.

Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ, Humphreys CJ, “Compositional contrast in AlxGa1-xN/GaN heterostructures using scanning spreading resistance microscopy”, Appl. Surf. Sci. 253 (2007) 3937–3944.

Galtrey MJ, Oliver RA, Humphreys CJ, “Atom probe provides evidence to question InGaN cluster theory”, Compound Semiconductor 13 (2007) 27.

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A, Smith GDW, Response to “Comment on ‘Three dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure: assessment of possible indium clustering’ “, Appl. Phys. Lett. 91 (2007) 176101.

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A, “Three-dimensional atom probe characterisation of III-nitride quantum-well structures”, Springer Proceedings in Physics 120 (2007) 161.

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH, Cerezo A, “Three dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure: assessment of possible indium clustering”, Appl. Phys. Lett. 90 (2007) 061903.

Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ, “High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm”, Journal of Applied Physics, 101 (2007) 033516. Also selected for the February 19, 2007 issue of Virtual Journal of Nanoscale Science & Technology.

Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Humphreys CJ, “Resonant photoluminescence spectroscopy on InGaN/GaN single quantum well structures”, Physics of Semiconductors, A and B 893 (2007) 433-434.

Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabrol GR and Humphreys CJ, “High photoluminescence efficiency III-nitride based quantum well structures emitting at 380nm”, Physics of Semiconductors, A and B 893 (2007) 347-348.

Gundiah G, Wu JL and Cheetham AK, “Structure-property correlations in Ce-doped garnet phosphors for use in solid state lighting”, Chem. Phys. Lett., 441 (2007) 250-254.

Holec D, Costa PMFJ, Kappers MJ, Humphreys CJ, “Critical thickness calculations for InGaN/GaN”, Journal of Crystal Growth 303 (2007) 314-317.

Hollander JL, Kappers MJ and Humphreys CJ, “Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations”, Physica B-Condensed Matter 401 (2007) 307-310.

Humphreys CJ, “Does In form In-rich clusters in InGaN quantum wells?”, Phil. Mag., 87 (2007) 1971-1982.

Humphreys CJ, Galtrey MJ, van der Laak NK, Oliver RA, Kappers MJ, Graham DM and Dawson P, “The Puzzle of Exciton Localisation in GaN-based Structures: TEM, AFM and 3D APFIM hold the key”, Springer Proceedings in Physics 120 (2007) 3.

Humphreys CJ, Oliver RA and Galtrey MJ, “Applications, Environmental Impact and Microstructure Studies of Light Emitting Diodes”, Microscopy and Analysis, Nov. 2007, 5-8. Invited Review Article.

Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ, “Excitation Energy Dependence of the Photoluminescence Spectrum of an InGaN/GaN Single Quantum Well Structure”, Phys. Rev. B, 76 (2007) 205403.

Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ, “Control of the oscillator strength of the exciton in a single InGaN/GaN quantum dot”, Phys. Rev. Lett. 99 (2007) 197403.

Jarjour AF, Oliver RA and Taylor RA, “Progress in the optical studies of single InGaN/GaN quantum dots”, Phil. Mag. 87 (2007) 2077.

Jarjour, AF, Taylor RA, Martin RW, Watson IM, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ, “Optical studies of non-linear absorption in single InGaN/GaN quantum dots”, Physics of Semiconductors, A and B 893 (2007) 953-954.

Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A, “Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot”, Appl. Phys. Lett. 91 (2007) 052101.

Kappers MJ, Datta R, Oliver RA, Rayment FDG, Vickers ME and Humphreys CJ, “Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers”, J. Cryst. Growth 300 (2007) 70-74.

Kappers MJ, Hollander JL, McAleese C, Johnston CF, Broom RF, Barnard JS, Vickers ME and Humphreys CJ, “Growth and characterisation of semi-polar {11-22} InGaN/GaN MQW structures”, J. Crystal Growth 300 (2007) 155-159.

Kappers MJ, Johnston CF, Hollander JL, Hylton N, McAleese C, Dawson P and Humphreys CJ, “Growth of GaN-based quantum well structures: A comparison between polar, semi-polar and non-polar orientations”, 12th European Workshop on Metalorganic Vapour Phase Epitaxy – EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007.

Kappers MJ, Johnston CF, Hollander JL, McAleese C and Humphreys CJ, „A study of semi-polar (11-22) InGaN/GaN quantum well structures“, EW-MOVPE 2007 June 3-6 (2007) Bratislava, Slovakia.

Kappers MJ, Moram MA, Zhang Y, Vickers ME, Barber ZH and Humphreys, CJ, “Interlayer methods of reducing the dislocation density in gallium nitride”, Physica B-Condensed Matter 401 (2007) 296-301.

Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ, “Quantitative secondary electron energy filtering in a scanning electron microscope and its applications”, Ultramicroscopy 107 (2007) 140-150.

Ketteniss N, Kappers MJ, McAleese C and Oliver RA, “The effect of silane treatment of AlxGa1-xN surfaces”, Springer Proceedings in Physics 120 (2007) 69.

Mercer CJ, Tsang YH and Binks DJ, “A model of a QCW diode pumped passively Q-switched solid state laser”, J. Modern Optics, 54 (2007) 1685-1694.

Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ, “Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices”, Ultramicroscopy 107 (2007) 382-389.

Moram MA, Barber ZH and Humphreys CJ, “Accurate experimental determination of the Poisson’s ratio of GaN using high resolution X-ray diffraction”, J. Appl. Phys. 102 (2007) 023505.

Moram MA, Kappers MJ, Barber ZH and Humphreys CJ, “Growth of low dislocation density GaN using transition metal nitride masking layers”, J. Cryst. Growth 298 (2007) 268 – 271.

Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ, “Growth of dislocation-free islands on Si (111) using a scandium nitride buffer layer”, J. Cryst. Growth 308 (2007) 302–308.

Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ, “Dislocation reduction in gallium nitride films using scandium nitride interlayers”, Appl. Phys. Lett. 91 (2007) 152101.

Oliver RA and Daudin B, “Preface: Intentional and Unintentional Localisation in InGaN”, Phil. Mag. 87 (2007) 1967.

Oliver RA, Jarjour AF, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ, “Materials challenges for devices based on single, self-assembled InGaN quantum dots”, J. Phys: Conf. Ser. 61 (2007) 889.

Richards B, Shen S, Jha A, Tsang YH and Binks DJ, “Infrared emission and energy transfer in Tm3+, Tm3+-Ho3+ and Tm3+-Yb3+-doped tellurite fibre”, Optics Express, 15 (2007) 6546-6551.

Rigopoulos N, Hamilton B, Davies GJ, Towlson BM, Poolton NRJ, Dawson P, Graham DM, Kappers MJ, Humphreys CJ and Carlson S, “Optically detected extended x-ray absorption fine structure study of InGaN/GaN single quantum wells”, Physics of Semiconductors, A and B 893 (2007) 1503-1504.

Sadler TC, Kappers MJ, Vickers ME and Oliver RA, “Characterisation of InxAl1-xN epilayers grown on GaN”, Springer Proceedings in Physics 120 (2007) 29.

Singh LJ, Oliver RA, Barber ZH, Eustace DA, McComb DW, Clowes SK, Gilbertson AM, Magnus F, Branford WR, Cohen LF, Buckle L, Buckle PD and Ashley T “Preparation of InAs(001) surface for spin injection via a chemical route”, J. Phys. D. 40 (2007) 3190.

Stuke M, Mueller K, Mueller Y, Williams K, Oliver RA, Schertel A, Hagedorn R, Ohlberg DAA, Fuhr G and Williams RS, “Direct-Writing of Three-Dimensional Structures Using Laser-Based Processes”, MRS Bulletin 32 (2007) 32-39.

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ, “Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN”, Springer Proceedings in Physics 120 (2007) 463.

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ, “Practical issues in carrier-contrast imaging of GaN structures”, phys. stat. sol (c) 4 (2007) 2576-2580.

van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ, “Characterisation of InGaN quantum wells with gross fluctuations in width”, J. Appl. Phys. 102 (2007) 013513.

van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ, “The role of gross well-width fluctuations in bright, green-emitting single InGaN/GaN quantum well structures”, Appl. Phys. Lett. 90 (2007) 121911.

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Leten RR, Degroote B and Borghs G, “Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy”, Appl. Phys. Lett. 91 (2007) 092125.

Zhu D, Corbett B, Roycroft B, Maaskant P, McAleese C, Akhter M, Kappers MJ and Humphreys CJ, “Enhanced efficiency of near-UV emitting LEDs for solid-state lighting applications”, Proc. SPIE 6797, (2007) 679700.

Zhu D, Kappers MJ, McAleese C, Graham DM, Chabrol GR, Hylton NP, Dawson P, Thrush EJ and Humphreys CJ, “Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures”, Journal of Crystal Growth 298 (2007) 504-507.