Griffin,P. H. & Oliver, R. A.
Porous nitride semiconductors reviewed
J. Phys. D: Appl. Phys. 53, 383002 (2020)
Frentrup, M., Lee, L.Y., Sahonta, S.-L., Kappers, M.J., Massabuau, F., Gupta, P., Oliver, R.A., Humphreys, C.J., Wallis, D.J.,
X-ray analysis of cubic zincblende III-nitrides
J. Phys. D: Appl. Phys., 50 , 433002, (2017)
Oliver, R. A.
Critical assessment 23: Gallium nitride-based visible light-emitting diodes.
Materials Science and Technology (United Kingdom), 32(8), 737-745. (2016)
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Zhu, T., & Oliver, R. A.
Nitride quantum light sources.
EPL, 113(3). (2016)
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Dawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., & Humphreys, C. J.
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells.
Journal of Applied Physics, 119(18). (2016)
Siyuan Zhang, Yucheng Zhang, Ying Cui, Christoph Freysoldt, Jörg Neugebauer, Ruben R. Lieten, Jonathan S. Barnard, and Colin J. Humphreys.
Interfacial Structure and Chemistry of GaN on Ge(111).
Phys. Rev. Lett. 111, 256101 (2013)
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T. Zhu and R. A. Oliver
Unintentional doping in GaN
Phys. Chem. Chem. Phys, 14, 9558-9573 (2012).
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Oliver, R. A., Bennett, S. E., Zhu, T., Beesley, D. J., Kappers, M. J., Saxey, D. W., Humphreys, C. J.
Microstructural origins of localization in InGaN quantum wells.
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Moram, M. A., and Vickers, M. E.
X-ray diffraction of III-nitrides.
REP PROG PHYS, 72(3) (2009).
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Jarjour, A. F., Oliver, R. A., & Taylor, R. A.
Nitride-based quantum dots for single photon source applications.
PHYS STATUS SOLIDI A, 206(11), 2510-2523 (2009).
Oliver, R. A.
Advances in AFM for the electrical characterization of semiconductors.
REP PROG PHYS, 71(7). (2008)
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Humphreys, C. J.
Solid-state lighting.
MRS BULLETIN, 33(4), 459-470 (2008)
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Jarjour, A. F., Oliver, R. A., & Taylor, R. A.
Progress in the optical studies of single InGaN/GaN quantum dots.
PHILOS MAG, 87(13), 2077-2093 (2007).
Humphreys, C. J.
Does In form In-rich clusters in InGaN quantum wells?
PHILOS. MAG, 87(13), 1971-1982 (2007).