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Cambridge Centre for Gallium Nitride

 

Binks, D. J., Dawson, P., Oliver, R.A., & Wallis, D.J.

Cubic GaN and InGaN/GaN quantum wells

Appl. Phys. Rev. 9, 041309 (2022)

doi: 10.1063/5.0097558

 

Griffin,P. H. & Oliver, R. A.

Porous nitride semiconductors reviewed

J. Phys. D: Appl. Phys. 53, 383002 (2020)

doi:10.1088/1361-6463/ab9570

 

Frentrup, M., Lee, L.Y., Sahonta, S.-L., Kappers, M.J., Massabuau, F., Gupta, P., Oliver, R.A., Humphreys, C.J., & Wallis, D.J.,

X-ray analysis of cubic zincblende III-nitrides

J. Phys. D: Appl. Phys., 50 , 433002, (2017)

doi:10.1088/1361-6463/aa865e

 

Oliver, R. A.

Critical assessment 23: Gallium nitride-based visible light-emitting diodes.

Materials Science and Technology (United Kingdom) 32 (8), 737-745;(2016)

doi:10.1080/02670836.2015.1116225

 

Zhu, T., Oliver, R. A.

Nitride quantum light sources.

EPL, 113, 38001 (2016)

doi:10.1209/0295-5075/113/38001

 

Dawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., & Humphreys, C. J.

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells.

Journal of Applied Physics, 119(18). (2016)

doi:10.1063/1.4948237

 

Zhang, S., Zhang, Y., Cui, Y., Freysoldt, C., Neugebauer, J., Lieten, R.R., Barnard, J.S., & Humphreys, C.J..

Interfacial Structure and Chemistry of GaN on Ge(111).

Phys. Rev. Lett. 111, 256101 (2013)

doi:10.1103/PhysRevLett.111.256101

 

T. Zhu and R. A. Oliver

Unintentional doping in GaN

Phys. Chem. Chem. Phys. 14, 9558-9573 (2012).

doi: 10.1039/C2CP40998D

 

Oliver, R. A., Bennett, S. E., Zhu, T., Beesley, D. J., Kappers, M. J., Saxey, D. W., Humphreys, C. J.

Microstructural origins of localization in InGaN quantum wells.

J. Phys. D: Appl. Phys. 43 (35). (2010)

doi:10.1088/0022-3727/43/35/354003

 

Moram, M. A., and Vickers, M. E.

X-ray diffraction of III-nitrides.

REP PROG PHYS, 72(3) (2009).

doi:10.1088/0034-4885/72/3/036502

 

Jarjour, A. F., Oliver, R. A., & Taylor, R. A.

Nitride-based quantum dots for single photon source applications.

PHYS STATUS SOLIDI A, 206(11), 2510-2523 (2009).

doi:10.1002/pssa.200824455

 

Oliver, R. A.

Advances in AFM for the electrical characterization of semiconductors.

REP PROG PHYS, 71(7). (2008)

doi:10.1088/0034-4885/71/7/076501

 

Humphreys, C. J.

Solid-state lighting.

MRS BULLETIN, 33(4), 459-470 (2008)

doi: 10.1557/mrs2008.91

 

Jarjour, A. F., Oliver, R. A., & Taylor, R. A.

Progress in the optical studies of single InGaN/GaN quantum dots.

PHILOS MAG, 87(13), 2077-2093 (2007).

doi:10.1080/14786430701311219

 

Humphreys, C. J.

Does In form In-rich clusters in InGaN quantum wells?

PHILOS. MAG, 87(13), 1971-1982 (2007).

doi:10.1080/14786430701342172