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Cambridge Centre for Gallium Nitride



A new Veeco MOCVD reactor was installed in 2017 in the new Materials Science and Metallurgy building. The system is configured to utilise cold-wall high-revolution (~1000 rpm) rotating-disc fluid dynamics at a large plenum-susceptor separation in contrast to the close-coupled showerhead geometry of the other two tools. In order to monitor temperature, reflectivity, and curvature of the epiwafers during growth, the system is equipped with reflectometer and emissivity corrected pyrometers at the center and at the edge. Presently, the reactor is capable of growth on 2", 6", and 8" Si/Sapphire/SiC substrates (with a proposed road-map to 12") and supplements the epitaxial requirements of multiple projects along with the other two systems.