R. Barrett, D. J. Dyer, J. McMahon, S. Schulz, M. J. Kappers, R. Oliver, and D. J. Binks, "Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: Saturation of localisation sites versus Auger-Meitner recombination", J. Phys. D: Appl. Phys. xx, xxxx (2024); DOI: 10.1088/1361-6463/ad8bd4
A. Gundimeda, G. Kusch, M. Frentrup, H. Xiu, R. Shu, C. Hofer, P. A. J. Bagot, M. P. Moody, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well", J. Phys. D: Appl. Phys. 58, 025112 (2024); DOI: 10.1088/1361-6463/ad8662
K. Loeto, G. Kusch, O. Brandt, P.-M. Coulon, S. Hammersley, J. Lähnemann, I. Girgel, S. Fairclough, M. Sarkar, P. A Shields, and R. Oliver, "Investigating the exciton dynamics in InGaN/GaN core-shell nanorods using time-resolved cathodoluminescence", Nanotechnology 36, 025703 (2024/2025); DOI: 10.1088/1361-6528/ad8356
S. Duston, R.A. Oliver, K.J. Kubiak, Y. Wang, C. Wang, and A. Morina, "Tribological manufacturing of ZDDP tribofilms functionalised by graphene nanoplatelets", J. Phys. Mater. 7, 045001 (2024); DOI: 10.1088/2515-7639/ad6930
X. Bai, S.M. Fairclough, L. Dai, M. Sarkar, P.H. Griffin, A. Gundimeda, Y. Sun, N.C. Greenham, M.I. Dar, R.A. Oliver, and R.H. Friend, "Enhanced Excitonic Nature of MAPbBr3 Nanocrystals in Nanoporous GaN", Adv. Optical Mater. 12, 2400221 (2024); DOI: 10.1002/adom.202400221
S. Ghosh, M. Sarkar, M. Frentrup, M.J. Kappers, and R.A. Oliver, "Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates", J. Appl. Phys. 136, 043105 (2024); DOI: 10.1063/5.0216672
K. Loeto, S.M. Fairclough, I. Griffiths, G. Kusch, S. Ghosh, M.J. Kappers, N. Young, and R.A. Oliver, "Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN", J. Appl. Phys. 136, 045702 (2024); DOI: 10.1063/5.0211529
R. Shu, R. A. Oliver, M. Frentrup, M. J. Kappers, H. Xiu, G. Kusch, D. J. Wallis, C. Hofer, P. AJ Bagot, and M. P. Moody, "Atom Probe Tomography Investigation of the Impact of Stacking Faults on InGaN/GaN Quantum Well LED Systems", Microsc. Microanal. 30, 52–53 (2024); DOI: 10.1093/mam/ozae044.024
D. Cameron, M. Schilling, G. Kusch, P. R. Edwards, V. Spulis, T. Wernicke, M. Kneissl, R. A. Oliver, and R. W. Martin, "Cathodoluminescence and Friends to Study Defects in UV Emitters", Microsc. Microanal. 30, 6 (2024); DOI: 10.1093/mam/ozae044.004
S. Ghosh, M. Frentrup, A. M. Hinz, J. W. Pomeroy, D. Field, D. J. Wallis, M. Kuball, and R. A. Oliver, "Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon", arXiv preprint, arXiv: 2407.09723 (2024); arXiv: 2407.09723
D. Dyer, S. Church, R. Ahumada Lazo, M. J. Kappers, M. Halsall, P. Parkinson, D. Wallis, R. A. Oliver, and D. Binks, "Efficiency droop in zincblende InGaN/GaN quantum wells", Nanoscale 16, 13953-13961 (2024); DOI: 10.1039/D4NR00812J
A. Gundimeda, G. Kusch, M. Frentrup, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well", Nanotechnology 35, 395705 (2024); DOI: 10.1088/1361-6528/ad5db4
J. K. Cannon, S. G. Bishop, K. M. Eggleton, H. B. Yağcı, R. N. Clark, S. R. Ibrahim, J. P. Hadden, S. Ghosh, M. J. Kappers, R. A. Oliver, and A. J. Bennett, "Room temperature quantum emitters in aluminum nitride epilayers on silicon", Appl. Phys. Lett, 124, 244001 (2024); DOI: 10.1063/5.0207744
Y. Ji, M. Frentrup, S. M. Fairclough, Y. Liu, T. Zhu, and R. A. Oliver, "Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates", Semicond. Sci. Technol. 39, 085001 (2024); DOI: 10.1088/1361-6641/ad575b
C. Chen, S. Ghosh, P. De Wolf, Z. Liang, F. Adams, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy", Appl. Phys. Lett. 124, 232107 (2024); DOI: 10.1063/5.0203646
Y. Ke, J. Guo, D. Kong, J. Wang, G. Kusch, C. Lin, D. Liu, Z. Kuang, D. Qian, F. Zhou, G. Zhang, M. Niu, Y. Cao, R. A. Oliver, D. Dai, Y. Jin, N. Wang, W. Huang, and J. Wang, "Efficient and bright deep‐red light‐emitting diodes based on a lateral 0D/3D perovskite heterostructure", Adv. Mater. 36, 2207301 (2024); DOI: 10.1002/adma.202207301
Y. Hu, G. Kusch, D. Adeleye, S. Siebentritt, and R. Oliver, "Characterisation of the interplay between microstructure and opto-electronic properties of Cu (In, Ga) S2 solar cells by using correlative CL-EBSD measurements", Nanotechnology 35, 295702 (2024); DOI: 10.1088/1361-6528/ad3bbd
M. Sarkar, F. Adams, S. A. Dar, J. Penn, Y. Ji, A. Gundimeda, T. Zhu, C. Liu, H. Hirshy, F. C -P Massabuau, T. O’Hanlon, M. J. Kappers, S. Ghosh, G. Kusch, and R. A. Oliver, "Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons", Microsc. Microanal 00, 1–18 (2024); DOI: 10.1093/mam/ozae028
X. Cheng, N. K. Wessling, S. Ghosh, A. R. Kirkpatrick, M. J. Kappers, Y. ND Lekhai, G. W. Morley, R. A. Oliver, M. D. Dawson, J. M. Smith, P. S. Salter, and M. J. Strain, "Laser written nitrogen vacancy centers in diamond integrated with transfer print GaN solid immersion lenses", Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2024; DOI: 10.1117/12.3000474
T. Weatherley, G. Kusch, D. TL Alexander, R. A. Oliver, JF. Carlin, R. Butté, and N. Grandjean, "Nanoscale investigation of nonradiative point defects in InGaN/GaN quantum wells", Gallium Nitride Materials and Devices XIX; DOI: 10.1117/12.3000482
A. JC Prot, M. Melchiorre, T. Schaaf, R. G. Poeira, H. Elanzeery, A. Lomuscio, S. Oueslati, A. Zelenina, T. Dalibor, G. Kusch, Y. Hu, R. A. Oliver, and S. Siebentritt, "Improved sequentially processed Cu (In, Ga)(S, Se) 2 by Ag alloying", Sol. RRL 8, 2400208 (2024); DOI: 10.1002/solr.202400208
T. Walther, and R. A. Oliver, "Preface to the special issue on Microscopy of Semiconducting Materials 2023", J. Microsc. (2024); DOI: 10.1111/jmi.13265
J. Wang, L. Zeng, D. Zhang, A. Maxwell, H. Chen, K. Datta, A. Caiazzo, W. HM Remmerswaal, N. RM Schipper, Z. Chen, K. Ho, A. Dasgupta, G. Kusch, R. Ollearo, L. Bellini, S. Hu, Z. Wang, C. Li, S. Teale, L. Grater, B. Chen, M. M. Wienk, R. A. Oliver, H. J. Snaith, R. AJ Janssen, and E. H. Sargent, "Halide homogenization for low energy loss in 2-eV-bandgap perovskites and increased efficiency in all-perovskite triple-junction solar cells", Nat. Energy 9, 70-80 (2024); DOI: 10.1038/s41560-023-01406-5
