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Cambridge Centre for Gallium Nitride


Y. Ji, M. Frentrup, S. M. Fairclough, Y. Liu, T. Zhu, and R. A. Oliver, "Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates", Semicond. Sci. Technol. 39, 085001 (2024); DOI: 10.1088/1361-6641/ad575b

C. Chen, S. Ghosh, P. De Wolf, Z. Liang, F. Adams, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy", Appl. Phys. Lett. 124, 232107 (2024); DOI: 10.1063/5.0203646

Y. Ke, J. Guo, D. Kong, J. Wang, G. Kusch, C. Lin, D. Liu, Z. Kuang, D. Qian, F. Zhou, G. Zhang, M. Niu, Y. Cao, R. A. Oliver, D. Dai, Y. Jin, N. Wang, W. Huang, and J. Wang, "Efficient and bright deep‐red light‐emitting diodes based on a lateral 0D/3D perovskite heterostructure", Adv. Mater. 36, 2207301 (2024); DOI: 10.1002/adma.202207301

Y. Hu, G. Kusch, D. Adeleye, S. Siebentritt, and R. Oliver, "Characterisation of the interplay between microstructure and opto-electronic properties of Cu (In, Ga) S2 solar cells by using correlative CL-EBSD measurements", Nanotechnology 35, 295702 (2024); DOI: 10.1088/1361-6528/ad3bbd

M. Sarkar, F. Adams, S. A. Dar, J. Penn, Y. Ji, A. Gundimeda, T. Zhu, C. Liu, H. Hirshy, F. C -P Massabuau, T. O’Hanlon, M. J. Kappers, S. Ghosh, G. Kusch, and R. A. Oliver, "Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons", Microsc. Microanal 00, 1–18 (2024); DOI: 10.1093/mam/ozae028

X. Cheng, N. K. Wessling, S. Ghosh, A. R. Kirkpatrick, M. J. Kappers, Y. ND Lekhai, G. W. Morley, R. A. Oliver, M. D. Dawson, J. M. Smith, P. S. Salter, and M. J. Strain, "Laser written nitrogen vacancy centers in diamond integrated with transfer print GaN solid immersion lenses", Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2024; DOI: 10.1117/12.3000474

T. Weatherley, G. Kusch, D. TL Alexander, R. A. Oliver, JF. Carlin, R. Butté, and N. Grandjean, "Nanoscale investigation of nonradiative point defects in InGaN/GaN quantum wells", Gallium Nitride Materials and Devices XIX; DOI: 10.1117/12.3000482

A. JC Prot, M. Melchiorre, T. Schaaf, R. G. Poeira, H. Elanzeery, A. Lomuscio, S. Oueslati, A. Zelenina, T. Dalibor, G. Kusch, Y. Hu, R. A. Oliver, and S. Siebentritt, "Improved sequentially processed Cu (In, Ga)(S, Se) 2 by Ag alloying", arXiv preprint,  arXiv: 2403.04394 (2024); arXiv: 2403.04394

T. Walther, and R. A. Oliver, "Preface to the special issue on Microscopy of Semiconducting Materials 2023", J. Microsc. (2024); DOI: 10.1111/jmi.13265

J. Wang, L. Zeng, D. Zhang, A. Maxwell, H. Chen, K. Datta, A. Caiazzo, W. HM Remmerswaal, N. RM Schipper, Z. Chen, K. Ho, A. Dasgupta, G. Kusch, R. Ollearo, L. Bellini, S. Hu, Z. Wang, C. Li, S. Teale, L. Grater, B. Chen, M. M. Wienk, R. A. Oliver, H. J. Snaith, R. AJ Janssen, and E. H. Sargent, "Halide homogenization for low energy loss in 2-eV-bandgap perovskites and increased efficiency in all-perovskite triple-junction solar cells", Nat. Energy 9, 70-80 (2024); DOI: 10.1038/s41560-023-01406-5