Publications from 2025

X. Xu, D. Dyer, M. Frentrup, W.R. Fieldhouse-Allen, M. J. Kappers, G. Kusch, D. J. Wallis, R. A. Oliver, and D. J. Binks, "Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells", J. Phys. D: Appl. Phys., 58(47), 475101 (2025), DOI: 10.1088/1361-6463/ae1d8d

T. R. Harris-Lee, B. Thornley, J. Zhang, M. J. Kappers, and R. A. Oliver, "Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control", ACS Applied Materials & Interfaces, 17(47), 64931-64941 (2025), DOI: 10.1021/acsami.5c18520

A. V. Oli, K. Kaur, M. Melchiorre, A. Jean-Claude M. Prot, S. Gharabeiki, Y. Hu, G. Kusch, A. Hultqvist, T. Törndahl, W. Hempel, W. Witte, R. A. Oliver, and S. Siebentritt, "Sodium induced beneficial effects in wide bandgap Cu (In, Ga) S2 solar cell with 15.7% efficiency", Progress in Photovoltaics: Research and Applications, 1-14 (2025); DOI: 10.1002/pip.70033

A. Griesi, Y. P. Ivanov, S. M. Fairclough, A. V. Oli, G.Kusch, R. A. Oliver, P. De Padova, C. Ottaviani, U. Wijesinghe, S. Siebentritt, A. Di Carlo, O. S. Hutter, G. Longo, and G. Divitini, "Understanding Local Crystallography in Solar Cell Absorbers with Scanning Electron Diffraction", Small Methods9(11), e01334 (2025); DOI: 10.1002/smtd.202501334

S. Zhou, M. Frentrup, P. Tian, and H. Li, "Special issue on group III-nitrides for next-generation optoelectronic devices", Semiconductor Science and Technology40, 090201 (2025); DOI: 10.1088/1361-6641/adfe0f

S. Rezaie, G. Kusch, L. Samuelson, J. B. Wagner, and S. Yazdi, "Point Defect Induced Potential Wells across the m-Plane of Core/Shell GaN Nanowires", physica status solidi (RRL)–Rapid Research Letters19, 2500145 (2025); DOI: 10.1002/pssr.202500145

K. McCabe, C. Shi, N. Suphannarat, M. G.S. Pearce, R. A. Oliver, and D. J. Thrimawithana, "A Review of Cryogenic Power Electronic Converters",2025 Energy Conversion Congress & Expo Europe (ECCE Europe)xx, 1-6 (2025); DOI: 10.1109/ECCE-Europe62795.2025.11238620

S. Gharabeiki, F. Lodola, T. Schaaf, T. Wang, M. Melchiorre, N. Valle, J. Niclout, M. Ali, Y. Hu, G. Kusch, R. A. Oliver, and S. Siebentritt, "Effect of a band gap gradient on the radiative losses in the open-circuit voltage of solar cells", PRX Energy4, 033006 (2025); DOI: 10.1103/r25l-ftmp

X. Xu, M. Frentrup, G. Kusch, R. Shu, C. Hofer, P. A.J. Bagot, M. P. Moody, M. J. Kappers, D. J. Wallis, and R. A. Oliver, ”Point defect luminescence associated with stacking faults in magnesium doped zincblende GaN”, Journal of Applied Physics137, 235301 (2025); DOI: 10.1063/5.0274599

J. A. Cuenca, A. Al-Moathin, M. J. Kappers, S. Mandal, M. Kuball, R. A. Oliver, C. Li, and O. A. Williams, ”Microwave plasma modelling for thick diamond deposition on III-nitrides”, Carbon241, 120349 (2025); DOI: 10.1016/j.carbon.2025.120349

R. Shu, R. A. Oliver, M. Frentrup, M. J. Kappers, H. Xiu, G. Kusch, D.J. Wallis, C. Hofer, P. A. J. Bagot, and M. P. Moody, ”Beyond Transmission Electron Microscopy Imaging: Atom Probe Tomography Reveals Chemical Inhomogeneity at Stacking Fault Interfaces in InGaN/GaN Light-Emitting Diodes”, Materialia40, 102417 (2025); DOI: 10.1016/j.mtla.2025.102417

Y. Chen, R. Wang, G. Kusch, B. Xu, C. Hao, C. Xue, L. Cheng, L. Zhu, J. Wang, H. Li, R. A. Oliver, N. Wang, W. Huang, and J. Wang, ”All-site alloyed perovskite for efficient and bright blue light-emitting diodes”, Nature Communications16, 3254 (2025); DOI: 10.1038/s41467-025-58470-6

J. Chen, M. Xiao, Z. Chen, S. Khan, S. Ghosh, N. Macadam, Z. Chen, B. Zhou, G. Yun, K. Wilk, G. Psaltakis, F. Tian, S. Fairclough, Y. Xu, R. Oliver, and T. Hasan, "Inkjet‐printed reconfigurable and recyclable memristors on paper", InfoMat, e70000 (2025); DOI: 10.1002/inf2.70000

Y. Hu, G. Kusch, D. Adeleye, S. Siebentritt, and R. A. Oliver, "TUNA-EBSD-CL Correlative Multi-microscopy Study on the Example of Cu (In, Ga) S2 Solar Cell Absorber", Journal of Microscopy298, 106-117 (2025); DOI: 10.1111/jmi.13393

F. Adams, S. Ghosh, Z. Liang, C. Chen, N. Suphannarat, M. J Kappers, D. J. Wallis, and R.A. Oliver, "Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature",  J. Phys. D: Appl. Phys. 58, 135117 (2025); DOI: 10.1088/1361-6463/adafb5

R. M. Barrett, D. D. Dyer, J. M. McMahon, S. Schulz, M. J. Kappers, R. A. Oliver, and D. Binks, "Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: saturation of localisation sites versus Auger–Meitner recombination", J. Phys. D: Appl. Phys.58, 045103 (2025); DOI: 10.1088/1361-6463/ad8bd4

S. Ghosh, M. Frentrup, A. M. Hinz, J. W. Pomeroy, D. Field, D. J. Wallis, M. Kuball, and R. A. Oliver, "Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon", Advanced Materials37, 2413127 (2025); DOI: 10.1002/adma.202413127

A. Gundimeda, G. Kusch, M. Frentrup, H. Xiu, R. Shu, C. Hofer, P. A. J. Bagot, M. P. Moody, M. J. Kappers, D. J. Wallis and R. A. Oliver, "Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well", J. Phys. D: Appl. Phys.58, 025112 (2025); DOI: 10.1088/1361-6463/ad8662

D. Adeleye, M. Sood, A. V. Oli, T. Törndahl, A. Hultqvist, A. Vanderhaegen, E. M. Lanzoni, Y. Hu, G. Kusch, M. Melchiorre, A. Redinger, R. A. Oliver, and S. Siebentritt, "Wide‐Bandgap Cu(In, Ga)S2 Solar Cell: Mitigation of Composition Segregation in High Ga Films for Better Efficiency", Small21, 2405221 (2025); DOI: 10.1002/smll.202405221

J. Wang, S. Hu, Z. Chen, Z. Yuan, P. Zhao, A. Dasgupta, F. Yang, J. Yao, M. Anh Truong, G. Kusch, E. Y.H. Hung, N. R.M. Schipper, L. Bellini, G. J.W. Aalbers, Z. Liu, R. A. Oliver, A. Wakamiya, R. A.J. Janssen, and H. J. Snaith, "Exposing binding-favourable facets of perovskites for tandem solar cells", Energy & Environmental Science18 (15), 7680-7694 (2025); DOI: 10.1039/D5EE02462E

O.M. Rigby, C. Hill, G. Kusch, M. Guennou, M. Szablewski, R. A. Oliver, L. Wirtz, P. Dale, and B. G. Mendis, "Correlative spectroscopy mapping of the prospective photovoltaic material bournonite using Raman and cathodoluminescence", J. Mater. Chem. C13, 10262-10270 (2025); DOI: 10.1039/D5TC00630A