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Cambridge Centre for Gallium Nitride





A new Aixtron reactor was installed in late 2013 in West-Cambridge site. The reactor has a modified heater to allow for higher temperature growth than with standard GaN reactors. We can now grow up to 1300 °C (wafer temperature) for high-quality AlN on sapphire work. The new configuration is also highly beneficial for large-area GaN on Si growth as well as more standard sapphire, SiC, free standing GaN, etc. We currently can grow 6″ GaN on Si wafers, with a view to scaling up to 8″ work.

Image credit - Marcus Ginn