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We are Hiring!

last modified Oct 06, 2017 01:01 PM

The centre is looking for a new post-doctoral research position to work on the growth of GaN on Si HEMT structures in collaboration with the Universities of Cardiff, Sheffield, Glasgow and Manchester and aims to demonstrate an integrated GaN technology which delivers both RF power amplifiers and power switches in a single circuit.

For more info and to apply click here.


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

May 2019: Spectral diffusion time scales in InGaN/GaN quantum dots

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