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Cambridge Centre for Gallium Nitride


The Cambridge Centre for Gallium Nitride is developing a range of photonic devices that exhibit complex a 3D structure. These include micro- and nano-cavities for the confinement of light and the exploration of light-matter interactions. Furthermore, we are developing nanoporous gallium nitride and incorporating it into a range of photonic architectures such as quantum well lasers and distributed Bragg reflectors.

For these photonic device developments to succeed, it is vital that we fully understand the 3D structure of these materials and devices at the nanoscale, this represents a microscopy problem that is both exciting and challenging. Structural insights will be incorporated into models of materials and device properties to understand what structural factors enhance or limit the performance of photonic devices and to drive the future development of improved fabrication techniques.

The overall aim of the PhD project is to develop and apply microscopy techniques that allow the 3D characterization of nanostructured semiconductor samples including not only mesoporous semiconductors, but also lithographically defined photonic and electronic micro- and nanostructures. Both electron tomography (in the transmission electron microscope) and slice-and-view imaging (in the focused ion beam scanning electron microscope) will be explored.  Three-dimensional imaging data will be combined with finite element modelling to predict the impact of the observed nanostructure on materials properties and/or device performance.


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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PhD Candidate

Contact Details

+44 (0)1223 334368