skip to primary navigationskip to content

GaN HEMT progress in Semiconductor Today

last modified Oct 08, 2015 02:40 PM
Congratulations to those working on PowerGaN, who have two summaries of recent progress on the PowerGaN project appearing in recent editions of Semiconductor Today magazine.

Progress in the PowerGaN project has been highlighted in recent editions of Semiconductor Today magazine, with two articles describing the project's work on HEMT passivation and high frequency HEMTs on silicon.

Reduced gate leakage and current collapse in GaN HEMTs.

High-performance GaN on silicon HEMTs

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

December 2017: Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

Read more

RSS Feed Latest news

GaN Centre goes large!

Dec 14, 2017

PhD in 3 minutes!

Nov 28, 2017

New students in GaN!

Nov 01, 2017

View all news