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GaN HEMT progress in Semiconductor Today

last modified Oct 08, 2015 02:40 PM
Congratulations to those working on PowerGaN, who have two summaries of recent progress on the PowerGaN project appearing in recent editions of Semiconductor Today magazine.

Progress in the PowerGaN project has been highlighted in recent editions of Semiconductor Today magazine, with two articles describing the project's work on HEMT passivation and high frequency HEMTs on silicon.

Reduced gate leakage and current collapse in GaN HEMTs.

High-performance GaN on silicon HEMTs

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August 2017: Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

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