skip to content

Cambridge Centre for Gallium Nitride

 

Congratulations to those working on PowerGaN, who have two summaries of recent progress on the PowerGaN project appearing in recent editions of Semiconductor Today magazine.

Progress in the PowerGaN project has been highlighted in recent editions of Semiconductor Today magazine, with two articles describing the project's work on HEMT passivation and high frequency HEMTs on silicon.

Reduced gate leakage and current collapse in GaN HEMTs.

High-performance GaN on silicon HEMTs

logo

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .