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Cambridge Centre for Gallium Nitride


Congratulations to those working on PowerGaN, who have two summaries of recent progress on the PowerGaN project appearing in recent editions of Semiconductor Today magazine.

Progress in the PowerGaN project has been highlighted in recent editions of Semiconductor Today magazine, with two articles describing the project's work on HEMT passivation and high frequency HEMTs on silicon.

Reduced gate leakage and current collapse in GaN HEMTs.

High-performance GaN on silicon HEMTs


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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