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Cambridge Centre for Gallium Nitride



Congratulations to Peter Griffin from the Cambridge Centre for Gallium Nitride, whoes paper on porous DBRs was chosen as a cover illustration for JAP.


Reproduced with the permission of AIP Publishing.


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .