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Cambridge Centre for Gallium Nitride

Edward Saunders

Edward Saunders has joined the Cambridge GaN team for his NanoDTC research project. In the next 2 months, he will investigate the degradation of porous GaN through ion and radiation damage for space applications. His first trip took him to the Dalton Cumbrian Facility (DCF) for a proton beam treatment of his samples.


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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