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Mr Bertrand Rouet-Leduc

Mr Bertrand Rouet-Leduc
Room 0_033
Office Phone: +44 (0)1223 334404

Biography:

I graduated from the École Normale Supérieure in 2013. During my master's degree I worked at the Commissariat à l'Énergie Atomique on models of heterogeneous nucleation, and at the Los Alamos National Laboratory on algorithms accelerating multi-scale simulations.

I joined the Cambridge Center for Gallium Nitride in 2013, to work on applying machine learning algorithms to the optimisation of quantum structures, and to the creation of meta-models able to predict the efficiency of new quantum structures.

I recently got involved with the Geophysics group of the Los Alamos National Laboratory, using machine learning to characterize the physical state of laboratory faults.

I received my PhD from the University of Cambridge in 2017, and I am now a Postdoc at the Los Alamos National Laboratory, using my materials science and machine learning knowledge on geophysics problems.

ResearchGate profile

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Key Publications

"Estimating Fault Friction From Seismic Signals", B. Rouet-Leduc, et al., arXiv:1710.04172.

"Machine learning predicts laboratory earthquakes", B. Rouet-Leduc, et al., Geophysical Research Letters, 44, 9276-9282.

"Automatized convergence of optoelectronic simulations using active machine learning", B. Rouet-Leduc, et al., Applied Physics Letters 111 (4), 043506.

Optimisation of GaN light emitting diodes and the reduction of efficiency droop”, B. Rouet-Leduc, et al., Scientific Reports 6, 24862.

Nano-cathodoluminescence reveals mitigation of the Stark shift in InGaN quantum wells by Si doping”, J.T. Griffiths, S. Zhang, B. Rouet-Leduc, et al., Nano letters (2015).

Distributed Database Kriging for Adaptive Sampling (D2KAS)”, D. Roehm, R.S. Pavel, K. Barros, B. Rouet-Leduc, et al., Computer Physics Communications,192, 138-147 (2015).

Spatial adaptive sampling in multiscale simulation”, B. Rouet-Leduc, K. Barros, et al., Computer Physics Communications, 185 (7), 1857-1864 (2014).

The kinetics of heterogeneous nucleation and growth: an approach based on a grain explicit model”, B. Rouet-Leduc, J.-B. Maillet, and C. Denoual, Modelling and Simulation in Materials Science and Engineering, 22 (3), 035018 (2014).

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

November 2017: X-ray diffraction analysis of cubic zincblende III-nitrides

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