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Dr Fabien Massabuau

Dr Fabien Massabuau
Room 0_033
Office Phone: +44 (0)1223 334368

Biography:

PhD research areas

The aim of my project is to understand the impact of the nanoscale structure of InGaN/GaN quantum wells on the efficiency of emission of light emitting diodes. The project will focus on detailed measurements of microstructure, which will then be correlated with luminescence data from collaborators at Manchester and elsewhere.

For more information on Fabien's career and her role in the GaN centre read his researcher profile.

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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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December 2017: Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

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