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Cambridge Centre for Gallium Nitride


I joined the Cambridge Centre for Gallium Nitride in April 2018 as a Postdoctoral Research Assistant after finishing my PhD projects in Kiel, Germany. At that time I was focussing primarily on growing high electron mobility transistor (HEMT) structures on 6" silicon wafers. However, since December 2018 I am working on my own project with the title 'Heteroepitaxial Growth of GaN on Diamond Substrates with High Thermal Conductivity', which is funded by a research fellowship from the Deutsche Forschungsgemeinschaft (DFG). The aim of the project is to evaluate the prospects of growing GaN epitaxially on single crystal diamond substrates and the scalability of the technology. In addition to the work on my own project I continue to study the growth of GaN on Si, especially the growth of the strain management layers.

Mr David  Rayment