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Dr Fung Sing Choi

Dr Fung Sing Choi
Room 0_033
Office Phone: +44 (0)1223 334368


The focus of my PhD project work will be on the characterisation of GaN-based HEMT and LED structures which will both be grown on the same 6″ and 8” silicon wafer. The combined standard materials characterisation techniques in the project such as scanning electron microscopy, X-ray diffraction, CV analysis, photoluminescence studies and atomic force microscopy will allow us to build up an accurate profile of the entire device structure, which is critical for subsequent device optimisation. These design building blocks will enable us to demonstrate the operation and performance of the first monolithically-integrated LED and HEMT on large-area semiconductor wafers.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

May 2019: Spectral diffusion time scales in InGaN/GaN quantum dots

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