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Cambridge Centre for Gallium Nitride


During my PhD studies at the Cambridge Centre for Gallium Nitride ...

... I was using a multi-microscopy approach to the characterisation of nitride devices. I intended to investigate nitrides by using a variety of characterisation techniques in a synergistic manner. This can provide a full picture of the relationship between the micro- and nano-structures, properties and performance of GaN-based devices. Devices of interest include laser diodes, light emitting diodes, prototype single photon sources, and high electron mobility transistors. Key microscopy techniques include scanning probe microscopy, transmission electron microscopy and cathodoluminescence in the scanning electron microscope. The results of my research was used in the development of the improved methods for the growth and fabrication of devices.

Dr An  Bao