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Mr An Bao

Mr An Bao
Room 0_033
Office Phone: +44 (0)1223 334368


I am using a multi-microscopy approach to the characterisation of nitride devices. I intend to investigate nitrides by using a variety of characterisation techniques in a synergistic manner. This can provide a full picture of the relationship between the micro- and nano-structures, properties and performance of GaN-based devices. Devices of interest include laser diodes, light emitting diodes, prototype single photon sources, and high electron mobility transistors. Key microscopy techniques include scanning probe microscopy, transmission electron microscopy and cathodoluminescence in the scanning electron microscope. The results of this research will be used in the development of the improved methods for the growth and fabrication of devices.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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January 2018: InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass

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