skip to content

Cambridge Centre for Gallium Nitride


Y. Ke, J. Guo, D. Kong, J. Wang, G. Kusch, C. Lin, D. Liu, Z. Kuang, D. Qian, F. Zhou, G. Zhang, M. Niu, Y. Cao, R. A. Oliver, D. Dai, Y. Jin, N. Wang, W. Huang, and J. Wang, "Efficient and Bright Deep-Red Light-Emitting Diodes based on a Lateral 0D/3D Perovskite Heterostructure", Advanced Materials 2207301 (2023); DOI: 10.1002/adma.202207301

R. A. Oliver, "LED applications of electrochemical sub-surface porosification of nitrides", Light-Emitting Devices, Materials, and Applications XXVII conference at SPIE OPTO, 2023; DOI: 10.1117/12.2668387

S. Peedle, D. Adeleye, S. Shukla, S. Siebentritt, R. A. Oliver, and G. Kusch, "Role of nanoscale compositional inhomogeneities in limiting the open circuit voltage in Cu (In, Ga) S2 solar cells", APL Energy 1, 026104 (2023); DOI: 10.1063/5.0145450

J. A. Smith, Z. Li, S. Ghosh, H. Francis, G. Navickaite, L. J. McKnight, R. A. Oliver, M. D. Dawson, and M. J. Strain, "Foundry SiN as a platform for Heterogeneous Integration at Visible Wavelengths", 2023 IEEE Photonics Society Summer Topicals Meeting Series (SUM); DOI: 10.1109/SUM57928.2023.10224480

C. Chen, S. Ghosh, F. Adams, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide", Ultramicroscopy 254, 113833 (2023); DOI: 10.1016/j.ultramic.2023.113833

W. Leigh, S. Mandal, J. A. Cuenca, D. Wallis, A. M. Hinz, R. A. Oliver, E. LH Thomas, and O. Williams, "Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry", ACS Omega (2023); DOI: 10.1021/acsomega.3c03609

A. Wadsworth, D. J. Thrimawithana, L. Zhao, M. Neuburger, R. A. Oliver, and D. J. Wallis, "GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft", Supercond. Sci. Technol. 36, 094002 (2023); DOI: 10.1088/1361-6668/ace5e7

R. M. Barrett, J. M. McMahon, R. Ahumada-Lazo, J. A. Alanis, P. Parkinson, S. Schulz, M. J. Kappers, R. A. Oliver, and D. Binks, "Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In, Ga) N/GaN Quantum Wells", ACS Photonics. (2023); DOI: 10.1021/acsphotonics.3c00355

K. Loeto, G. Kusch, S. Ghosh, M. J. Kappers, and R. A. Oliver, "Quantitative Analysis of Carbon Impurity Concentrations in GaN Epilayers by Cathodoluminescence", Micron. 172, 103489 (2023); DOI: 10.1016/j.micron.2023.103489

X. Cheng, N. K. Wessling, S. Ghosh, A. R. Kirkpatrick, M. J. Kappers, Y. ND Lekhai, G. W. Morley, R. A. Oliver, J. M. Smith, M. D. Dawson, P. S. Salter, and M. J. Strain, "Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers", arXiv preprint,  arXiv: 2306.11671 (2023); arXiv: 2306.11671 

N. Jiang, S. Ghosh, M. Frentrup, S. M Fairclough, K. Loeto, G. Kusch, R. A. Oliver, and H. J. Joyce, "Complications in silane-assisted GaN nanowire growth", Nanoscale Adv. 5, 2610 (2023); DOI: 10.1039/D2NA00939K

V. Villafañe, B. Scaparra, M. Rieger, S. Appel, R. Trivedi, T. Zhu, J. Jarman, R. A. Oliver, R. A. Taylor, J. J. Finley, and K. Müller, "Three-photon excitation of InGaN quantum dots", Phys. Rev. Lett. 130, 083602 (2023); DOI: 10.1103/PhysRevLett.130.083602

F. C-P Massabuau, F. Adams, D. Nicol, J. C. Jarman, M. Frentrup, J. W. Roberts, T. J. O’Hanlon, A. Kovács, P. R. Chalker, and R. A. Oliver, "Ni/Au contacts to corundum α-Ga2O3", Jpn. J. Appl. Phys. 62, SF1008 (2023); DOI: 10.35848/1347-4065/acbc28

A. Caiazzo, A. Maufort, B. T. van Gorkom, W. H. M. Remmerswaal, J. F. Orri, J. Li, J. Wang, W. T. M. van Gompel, K. Van Hecke, G. Kusch, R. A. Oliver, C. Ducati, L. Lutsen, M. M Wienk, S. D Stranks, D. Vanderzande, and R. A. J. Janssen, "3D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cells", ACS Appl. Energy Mater. 6, 3933–3943 (2023); DOI: 10.1021/acsaem.3c00101

K. Loeto, G. Kusch, S. Ghosh, M. Frentrup, A. Hinz, and R. A. Oliver, "Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence", Phys. Status Solidi (a). xx, xxxx (2023); DOI: ;10.1002/pssa.202200830

Y. Grishchenko, J. Dawson, S. Ghosh, A. Gundimeda, B. F. Spiridon, N. L. Raveendran, R. A. Oliver, S. Kar-Narayan, and Y. Calahorra, "Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity", J. Magn. Magn. Mater. 580, 170877 (2023); DOI: 10.1016/j.jmmm.2023.170877

T. J. Wade, A. Gundimeda, M. J. Kappers, M. Frentrup, S. M. Fairclough, D. J. Wallis, and R. A. Oliver, "MOVPE studies of zincblende GaN on 3C-SiC/Si (001)", J. Crystal Growth 611, 127182 (2023); DOI: 10.1016/j.jcrysgro.2023.127182

Y. Lin, H. Sena, M. Frentrup, M. Pristovsek, Y. Honda, and H. Amano, "Stress relaxation of AlGaN on nonpolar m-plane GaN substrate", J. Appl. Phys. 133, 225702 (2023); DOI: 10.1063/5.0149838

H. Xiu, S. M. Fairclough, A. Gundimeda, M. J. Kappers, D. J. Wallis, R. A. Oliver, and M. Frentrup, "Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy", J. Appl. Phys. 133, 105302 (2023); DOI: 10.1063/5.0138478

S. Ghosh, A. Hinz, M. Frentrup, S. Alam, D. J. Wallis, and R. Oliver, "Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD", Semicond. Sci. Technol. 38, 044001 (2023); DOI: 10.1088/1361-6641/acb9b6

D. Cameron, P. M. Coulon, S. Fairclough, G. Kusch, P. R. Edwards, N. Susilo, T. Wernicke, M. Kneissl, R. A. Oliver, P. A. Shields, and R. W. Martin, "Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes", Nano Lett. 23, 4, 1451–1458 (2023); DOI: 10.1021/acs.nanolett.2c04826 

E. T. Hughes, G. Kusch, J. Selvidge, B. Bonef, J. Norman, C. Shang, J. E. Bowers, R. A. Oliver, and K. Mukherjee, "Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon", arXiv preprint,  arXiv: 2301.03671 (2023); arXiv: 2301.03671

N. M. Adassooriya, D. Ozgit, S. G. Shivareddy, P. Hiralal, D. Dahanayake, R. A. Oliver, and G. A. J. Amaratunga, "Dielectric behaviour of plasma hydrogenated TiO2/cyanoethylated cellulose nanocomposites", Nanoscale 15, 1824-1834 (2023); DOI: 10.1039/D2NR04680F