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Cambridge Centre for Gallium Nitride


F. U. Kosasih, F. Di Giacomo, J. Ferrer Orri, K. Li, E. M. Tennyson, W. Li, F. Matteocci,G. Kusch,R. A. Oliver, J. L. MacManus-Driscoll, K. L. Moore, S. D. Stranks, A. Di Carlo,G. Divitini, and C. Ducati, "Sodium Diffuses from Glass Substrates through P1 Lines and Passivates Defects in Perovskite Solar Modules", Energy & Environmental Materials xxx, xxx (2022); DOI: 10.1002/eem2.12459

D. Binks, P. Dawson, R.A. Oliver, and D.J. Wallis, "Cubic GaN and InGaN/GaN Quantum wells", Applied Physics Reviews xxx, xxx (2022); DOI: xxx

Y. Hou, M. Kappers, C. Jin, and R. A. Oliver, "Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN", Appl. Phys. Lett. 120, 202101 (2022); DOI: 10.1063/5.0094454

B.F. Spencer, S.A. Church, P. Thompson, D.J.H. Cant, S. Maniyarasu, A. Theodosiou, A.N. Jones, M.J. Kappers, D.J. Binks, R.A. Oliver, J. Higgins, A.G. Thomas, T. Thomson, A.G. Shard, and W.R. Flavell, "Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)", Faraday Discussions ??, ?? (2022); DOI: 10.1039/D2FD00021K

A. Gundimeda, M. Frentrup, S. M. Fairclough, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlGaN nucleation layers", Journal of Applied Physics 131, 115703 (2022); DOI: 10.1063/5.0077186

V. Villafañe, B. Scaparra, M. Rieger, S. Appel, R. Trivedi, T. Zhu, J. Jarman, R. A. Oliver, R. A. Taylor, J. J. Finley, and K. Mueller, "Three-photon excitation of quantum two-level systems", arXiv preprint arXiv:2202.02034 (2022); arXiv: 2202.02034

F. U. Kosasih, G. Divitini, J. Ferrer Orri, E. M. Tennyson, G. Kusch, R. A. Oliver, S. D. Stranks, and C. Ducati, "Optical emission from focused ion beam milled halide perovskite device cross‐sections", Microsc. Res. Tech. 85, 2351-2355 (2022); DOI: 10.1002/jemt.24069

A. Gundimeda, M. Rostami, M. Frentrup, A. Hinz, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Influence of AlxGa1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)", J. Phys. D: Appl. Phys. 55, 175110 (2022); DOI: 10.1088/1361-6463/ac4c58

G. Kusch, M. Frentrup, N. Hu, H. Amano, R. A. Oliver, and M. Pristovsek, "Defect characterization of {10-13} GaN by electron microscopy", J. Appl. Phys. 131, 035705 (2022); DOI: 10.1063/5.0077084

G. Kusch, E. J. Comish, K. Loeto, S. Hammersley, M. J. Kappers, P. Dawson, R. A. Oliver, and F. C.-P. Massabuau, "Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence", Nanoscale 14, 402-409 (2022); DOI: 10.1039/D1NR06088K

C. Kocher, J. C. Jarman, T. Zhu, G. Kusch, R. A. Oliver, and R. A. Taylor, "Decreased Fast Time Scale Spectral Diffusion of a Nonpolar InGaN Quantum Dot", ACS Photonics 9, 275-281 (2022); DOI: 10.1021/acsphotonics.1c01613