skip to content

Cambridge Centre for Gallium Nitride


A. Barthel, J. W. Roberts, M. Napari, T. N. Huq, A. Kovács, R. A. Oliver, P. R. Chalker, T. Sajavaara, and F. Massabuau, "Ti alloyed α-Ga2O3: route towards wide band gap engineering", Appl. Phys. xx, xxxx (2020); DOI: xxxx   (arXiv:2006.01422)

S. A. Church, B. Ding, P. W. Mitchell, M. J. Kappers, M. Frentrup, G. Kusch, S. M. Fairclough, D. J. Wallis, R. A. Oliver, and D. J. Binks, "Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells", Appl. Phys. Lett. 117, 032103 (2020); DOI: 10.1063/5.0012131

F. C.-P. Massabuau, H. P. Springbett, G. Divitini, P. H. Griffin, T. Zhu, and R. A. Oliver, "Sequential plan-view imaging of sub-surface structures in the transmission electron microscope", Materialia 12, 100798 (2020); DOI: 10.1016/j.mtla.2020.100798

C. M. P. Garcia, A. Di Bernardo, G. Kimbell, M. E. Vickers, F. C.P. Massabuau, S. Komori, G. Divitini, Y. Yasui, H. G. Lee, J. Kim, B. Kim, M. G. Blamire, A. Vecchione, R. Fittipaldi, Y. Maeno, T. W. Noh, and J. W.A. Robinson, "Pair suppression caused by mosaic-twist defects in superconducting Sr 2 RuO 4 thin-films prepared using pulsed laser deposition", Commun Mater 1, 23 (2020); DOI: 10.1038/s43246-020-0026-1

T. Wang, R. Oliver, and R. Taylor, "Non-polar nitride single-photon sources", J. Opt. 22, 073001 (2020); DOI: 10.1088/2040-8986/ab97c2

E. J. W. Smith, A. H. Piracha, D. Field, J. W. Pomeroy, G. R. Mackenzie, Z. Abdallah, F. C.-P. Massabuau, A. M. Hinz, D. J. Wallis, R. A. Oliver, M. Kuball, and P. W. May, "Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN", Carbon 167, 620 (2020); DOI: 10.1016/j.carbon.2020.05.050

P. H. Griffin and R. A. Oliver, "Porous nitride semiconductors reviewed", J. Phys. D: Appl. Phys. 53, 383002 (2020); DOI: 10.1088/1361-6463/ab9570

P. H. Griffin, K.M. Patel, T. Zhu, R. M. Langford, V. S. Kamboj, D. A. Ritchie, and R. A. Oliver, "The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence", J. Appl. Phys. 127 (19), 193101 (2020); DOI: 10.1063/5.0005770

T. J. O'Hanlon, A. Bao, F. C.-P. Massabuau, M. J. Kappers, and R. A. Oliver, "Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques", Ultramicroscopy 212, 112970 (2020); DOI: 10.1016/j.ultramic.2020.112970

D.S.P. Tanner, P. Dawson, M. J. Kappers, R. A. Oliver, and S. Schulz, "Polar (In, Ga)N/GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem", Phys. Rev. Applied 13 (4), 044068 (2020); DOI: 10.1103/PhysRevApplied.13.044068

S. Kurdi, P. Zilske, X. D. Xu, M. Frentrup, M. E. Vickers, Y. Sakuraba, G. Reiss, Z. H. Barber, and J. W. Koo, "Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films" J. Appl. Phys. 127, 165302 (2020); DOI: 10.1063/1.5140464

publisher correction: A. A. Roble, S. K. Patra, F. Massabuau, M. Frentrup, M. A. Leontiadou, P. Dawson, M. J. Kappers, R. A. Oliver, D. M. Graham, and S. Schulz, "Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells", Scientific Reports 10 (1), 1 (2020); DOI: 10.1038/s41598-020-62494-x

F. C.-P. Massabuau, P. H. Griffin, H. P. Springbett, Y. Liu, R. V. Kumar, T. Zhu, and R. A. Oliver, "Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching", APL Materials 8 (3), 031115 (2020); DOI: 10.1063/1.5142491

M. D. Smith, J. A. Cuenca, D. E. Field, Y.-C. Fu, C. Yuan, F. Massabuau, S. Mandal, J. W. Pomeroy, R. A. Oliver, M. J. Uren, K. Elgaid, O. A. Williams, I. Thayne, and M. Kuball, "GaN-on-diamond technology platform: Bonding-free membrane manufacturing process", AIP Advances 10 (3), 035306 (2020); DOI: 10.1063/1.5129229

R. A. Oliver, "Let’s fix the system, not the scientists", Nat. Rev. Mater. 5 (2), 83-84 (2020); DOI: 10.1038/s41578-020-0177-1