R. Shu, R. A. Oliver, M. Frentrup, M. J. Kappers, H. Xiu, G. Kusch, D.J. Wallis, C. Hofer, P. A. J. Bagot, and M. P. Moody, ”Beyond Transmission Electron Microscopy Imaging: Atom Probe Tomography Reveals Chemical Inhomogeneity at Stacking Fault Interfaces in InGaN/GaN Light-Emitting Diodes”, Materialia xx, xxxxx (2025); DOI: 10.1016/j.mtla.2025.102417
D. Dyer, W. Fieldhouse-Allen, M. Kappers, D. Wallis, R. Oliver, and D. J. Binks, "Broadly tunable cubic phase InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition", Proceedings Gallium Nitride Materials and Devices XX 13366 (2025); DOI: 10.1117/12.3039278
F. Massabuau, M. Maruzane, R. Mullen, O. Makydonska, P. R. Edwards, Y. Oshima, J. Roberts, P. R. Chalker, R. A. Oliver, B. Hourahine, and R. W. Martin, "Optical and structural properties of threading dislocations in α-Ga2O3", Proceedings Oxide-based Materials and Devices XVI PC13367 (2025); DOI: 10.1117/12.3046324
M. Meneghini, M. Nicoletto, F. Piva, N. Roccato, A. Caria, F. Rampazzo, C. De Santi, M. Buffolo, F. Rossi, G. Mura, A. Gasparotto, C. Becht, G. Kusch, Y. Ji, X. Huang, H. Fu, H. Chen, Y. Zhao, N. Trivellin, G. Meneghesso, E. Zanoni, R. Oliver, N. Grandjean, and U. T. Schwarz, "Defects in InGaN QW structures: microscopic properties and modeling", Proceedings Light-Emitting Devices, Materials, and Applications XXIX 13386 (2025); DOI: 10.1117/12.3038351
S. Gharabeiki, F. Lodola, T. Schaaf, T. Wang, M. Melchiorre, N. Valle, J. Niclout, M. Ali, Y., G. Kusch, R. A. Oliver, and S. Siebentritt, "The effect of a band gap gradient on the radiative losses in the open circuit voltage of solar cells", arXiv preprint, arXiv: 2503.14077 (2025); arXiv: 2503.14077
J. Chen, M. Xiao, Z. Chen, S. Khan, S. Ghosh, N. Macadam, Z. Chen, B. Zhou, G. Yun, K. Wilk, G. Psaltakis, F. Tian, S. Fairclough, Y. Xu, R. Oliver, and T. Hasan, "Inkjet‐printed reconfigurable and recyclable memristors on paper", InfoMat, e70000 (2025); DOI: 10.1002/inf2.70000
Y. Hu, G. Kusch, D. Adeleye, S. Siebentritt, and R. A. Oliver, "TUNA-EBSD-CL Correlative Multi-microscopy Study on the Example of Cu (In, Ga) S2 Solar Cell Absorber", Journal of Microscopy 298, 106-117 (2025); DOI: 10.1111/jmi.13393
F. Adams, S. Ghosh, Z. Liang, C. Chen, N. Suphannarat, M. J Kappers, D. J. Wallis, and R.A. Oliver, "Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature", J. Phys. D: Appl. Phys. 58, 135117 (2025); DOI: 10.1088/1361-6463/adafb5
S. Ghosh, M. Frentrup, A. M. Hinz, J. W. Pomeroy, D. Field, D. J. Wallis, M. Kuball, and R. A. Oliver, "Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon", Advanced Materials 37, 2413127 (2025); DOI: 10.1002/adma.202413127
D. Adeleye, M. Sood, A. V. Oli, T. Törndahl, A. Hultqvist, A. Vanderhaegen, E. M. Lanzoni, Y. Hu, G. Kusch, M. Melchiorre, A. Redinger, R. A. Oliver, and S. Siebentritt, "Wide‐Bandgap Cu(In, Ga)S2 Solar Cell: Mitigation of Composition Segregation in High Ga Films for Better Efficiency", Small 21, 2405221 (2025); DOI: 10.1002/smll.202405221
