The Cambridge GaN’ians welcome four new graduate students, who just settled into the GaN office. Ben Thornley will be working on the fabrication, structure and properties of porous Nitride semiconductors. Jiawei Zhang will use porous nitrides for transistor applications; while Bua Suphannarat will try to unlock the secrets of Nitride-based transistors for low temperature applications. And last but not least Xiuyuan Xu will develop cubic GaN materials for microLED applications.
A very welcome everyone.
