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New Part III Students Land in the GaN Centre

last modified Oct 09, 2018 10:46 AM

Our AFM spaceship has landed and has brought three new students to new galaxies of knowledge. Commander Rachel Oliver welcomes Taria, Adina and Armin, who will join the Cambridge Centre for Gallium Nitride team to explore new frontiers of porous GaN and Gallium oxide. They will all be working on their Part III projects with us to complete their undergraduate studies.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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July 2019: Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

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