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New Porous GaN Grant

last modified Jul 10, 2017 09:49 AM

Dr Rachel Oliver and Dr Tongtong Zhu have been recently awarded an EPSRC Impact Acceleration Account Follow-On Fund on porous GaN technology.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

February 2018: Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

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