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New NanoDTC project to simulate porous GaN

last modified Feb 01, 2019 04:38 PM
New NanoDTC project to simulate porous GaN

Beautiful Maltese crosses like these are the result of birefringence in porous GaN structures.

New student Kunal Patel from the NanoDTC has begun a new project with us working to simulate the optical properties of porous GaN devices to learn more about its birefringent properties. The project is a collaboration with Varun Kamboj in the Semiconductor Physics group.

Learn more about our porous GaN work here.


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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September 2019: Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

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