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GaN on Diamond Project launches

last modified Feb 23, 2017 11:15 AM
GaN on Diamond Project launches

Ultra-high power GaN-on-diamond microwave device transforming communication and radars. (

The centre has just begun an exciting new £4.3 million EPSRC funded project to develop GaN on diamond microwave devices. The aim is to use diamond layers as a heat spreading layer to allow high power radio and microwave devices for 5G and 6G communication systems. The project is a collaboration with Bristol, Glasgow, Cardiff and Birmingham.

See our project page and the project's press release for more information.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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February 2019: Improvement of single photon emission from InGaN QDs embedded in porous micropillars

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