I obtained my PhD from the Hong Kong University of Science and Technology (HKUST), where my research focused on the growth of GaN-based quantum dots (QDs), as well as the development of QD-based light-emitting diodes (LEDs) and lasers. After completing postdoctoral positions at HKUST and Nanyang Technological University (NTU), I joined the Cambridge Centre for Gallium Nitride to further pursue research in metalorganic vapour-phase epitaxy (MOVPE) growth of InGaN QDs and colour centres for the fabrication of single-photon emitters.
Recent advancements in photonic solid-state systems have driven demand for reliable single-photon sources. Among the most promising candidates, semiconductor QDs offer unique advantages due to their high photon emission rate, scalability, and compatibility with standard semiconductor processing techniques. GaN-based QDs and colour centres, which can operate at room temperature, show especially promising potential for practical applications, including satellite communications and precision imaging. My current objective is to innovate and optimise growth techniques to produce high-quality optical InGaN QDs and colour centres, supporting the development of electrically driven single-photon sources suitable for both industrial and research applications.
