Ms Noppasorn (Bua) Suphannarat

I completed my BSc in Materials Science and Engineering from the University of Manchester and my MPhil in Micro and Nanotechnology Enterprise from the University of Cambridge. My master’s project was on the electrical properties of porous GaN at cryogenic temperatures which was completed at the Cambridge Centre for Gallium Nitride. I joined the group as a PhD student in October 2023 which is funded by the Grace and Thomas C H Chan Cambridge International Scholarship.

My PhD project focuses on normally-off GaN HEMT transistors and understanding the strengths and limitations of their current designs for applications at cryogenic temperatures. Once the limitations have been identified, I will then be able to explore other avenues of developing a new normally-off HEMT design or growth routine for improved low-temperature performance in power conversion.