Mr Jiawei Zhang

I initially studied Chemistry in Imperial College London (2018-2021) and the University of Bristol (2021-2022). During my studies, I became interested in novel semiconductors and chose to complete the MSc Nanotechnology degree at University College London. Subsequently, I joined the Cambridge Centre for Gallium Nitride as a PhD student in Oct 2023.

GaN possesses many advantageous properties, making it an attractive semiconductor for various device applications. The properties of GaN can be modified by porosification to broaden its application in devices, and the high stability of porous GaN increases the likelihood that these devices will be stable and hence commercially viable.

The goal of my project is to study the application of porous GaN in electronic devices. The morphology and electrical properties of porous GaN etched electrochemically from differently doped samples are under investigation at this stage of my project. This investigation is important for understanding the processing–properties relationship, aiding in the selection of suitable etching conditions for specific device applications.