Mr Benjamin Harding

As the global transition to electric vehicles accelerates and conventional combustion engines are phased out, the demand for high-power electronics is growing rapidly. This need is further amplified by the rise of AI, which requires significant computational resources and, consequently, increased power consumption. 

Wide bandgap III-Nitride semiconductors, like aluminium nitride (AlN), offer unique properties such as low energy loss, high-frequency power characteristics and stable high temperature performance.  These properties make them ideal for addressing future challenges in power electronics, 5G communications, and  DUV LEDs.

My PhD research focuses on developing fast, automated, and cost-effective methods for large-area characterisation of bulk AlN and alternative AlN pseudo-substrates. By utilising techniques such as atomic force microscopy, x-ray diffraction, and scanning electron microscopy. I aim to create workflows that improve wafer scale defect detection, highlighting key features or regions of interest and eventually optimising growth conditions for bulk crystal growth and epitaxy of AlN. 

I joined the Cambridge Centre for Gallium Nitride in October 2025 as part of the Materials 4.0 Centre for Doctoral Training supporting the development of national capability, with funding from the Henry Royce Institute.