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Mr David Rayment

Mr David Rayment
Room 0_069
Office Phone: +44 (0)1223 362958

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

December 2017: Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

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