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Dr Lok Yi Lee

Dr Lok Yi Lee
Room 0_033
Department of Materials Science and Metallurgy
University of Cambridge
27 Charles Babbage Road
Cambridge CB3 0FS
United Kingdom

Office Phone: +44 (0)1223 334368


My PhD project is on the growth of GaN on novel Si-based substrates.

Growth of cubic zincblende GaN on 3C-SiC/Si substrates by metal-organic vapour phase epitaxy (MOVPE)

Cubic zincblende GaN has advantages over more commonly used hexagonal wurtzite GaN, such as absence of strong internal fields and smaller band gap, which are both beneficial to the production of efficient green-wavelength LEDs. Challenges arise during growth as zincblende GaN is a metastable phase, and growth of wurtzite GaN is thermodynamically preferred. The aim of the project is to grow high quality zincblende GaN on 3C-SiC/Si substrates. To achieve this aim, I study how parameters of the MOVPE reactor affect the surface morphology of zincblende GaN epilayers by atomic force microscopy (AFM), and defects in such epilayers by transmission electron microscopy (TEM).

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

September 2019: Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

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