Dr Abhishek Chatterjee

In November 2024, I joined the Cambridge Centre for Gallium Nitride, where I work on the MOVPE growth of aluminium gallium nitride (AlGaN) for the development of advanced AlGaN-based solid-state circuit breakers (SSCBs). With its ultrawide bandgap, AlGaN offers remarkable advantages over traditional silicon power devices—higher efficiency, wider voltage operation, and faster switching capabilities—making it a highly promising material platform for future power-electronics technologies.

My current research focuses on optimizing the MOVPE growth of AlGaN and developing vertical transistor architectures based on this material system. A major part of my work involves achieving both n- and p-type doping in high-aluminium-content AlGaN, as well as exploring alternative concepts such as polarization-induced doping to overcome limitations associated with conventional impurity incorporation. To evaluate and refine these growth processes, I rely on several key characterization techniques, including HRXRD, AFM, Hall-effect measurements, and photoluminescence, which allow for detailed assessment of the structural, electrical, and optical properties of the MOVPE-grown layers.

I completed my PhD in 2021 from the Homi Bhabha National Institute, Mumbai, where my research centred on the MOVPE growth and electrical transport properties of GaN for optoelectronic applications. After completing my PhD, I worked on the MBE growth of III-nitride materials, which broadened my experience in epitaxy. As a device physicist, my research extends beyond materials growth to the clean room fabrication of several optoelectronic devices, including laser diodes and photodetectors.