The Cambridge Centre for Gallium Nitride (GaN)

Gallium nitride is probably the most important semiconductor material since silicon. It can be used to emit brilliant light in the form of light emitting diodes (LEDs) and laser diodes, as well as being the key material for next generation high frequency, high power transistors capable of operating at high temperatures.

The Cambridge Centre for Gallium Nitride is based in the Department of Materials Science and Metallurgy at the University of Cambridge. We are one of a small number of places in the world to have, in close proximity and on the same site, gallium nitride growth equipment, extensive advanced electron microscopy characterisation facilities, advanced X-ray diffraction characterisation facilities, atomic force microscopy, photoluminescence (PL) for measuring optical properties, Hall effect equipment for measuring electrical properties, and basic theory for understanding in detail physical properties.

The research team is thriving as we move into exciting new GaN based research areas. We welcome new collaboration with universities and industries throughout the world, and we also welcome new research students who want to apply to join our research group.

Professor Sir Colin Humphreys CBE FREng FRS
Dr Rachel Oliver