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Group Facilities

The Cambridge Centre for Gallium Nitride concentrates the growth and characterisation of gallium nitride based materials to a single site, allowing rapid feedback between the two fields. A Thomas Swan (now Aixtron) MOCVD growth reactor is used for GaN, InGaN and AlGaN growth and doping while characterisation is carried out using state of the art electron microscopy and X-ray diffraction facilities. We also have members performing computational modelling of III-nitride materials. More details on the facilities and their application to gallium nitride research are available below.