The III-nitrides have emerged as one of the most important device materials due to their wide, controllable band gap, and superior physical properties. They have a range of applications in optical and electronic devices. My research at the Cambridge Centre for Gallium Nitride focused on understanding and developing novel devices by characterising the material structure and correlating it with the device properties by a variety of techniques, most notably electron microscopy.
A full list of my publications can be found on my Google scholar profile and researchgate profile.
Further details can also be found on my linkedin profile.
