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Publications from 2017

Fabien Massabuau, Menno Kappers, Colin Humphreys, and Rachel Oliver, "Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth", Phys. Status Solidi B, (2017), DOI: 10.1002/pssb.201600666

J. T. Griffiths, C. X. Ren, P.-M. Coulon, E. D. Le Boulbar, C. G. Bryce, I. Girgel, A. Howkins,   I. Boyd,   R. W. Martin, D. W. E. Allsopp, P. A. Shields, C. J. Humphreys, and R. A. Oliver, "Structural impact on the nanoscale optical properties of InGaN core-shell nanorods", Appl. Phys. Lett. 110, 172105 (2017), DOI: 10.1063/1.4982594

S MagalhãesN FrancoI M WatsonR W MartinK P O'DonnellH P D SchenkF TangT C SadlerM J KappersR A Oliver, T MonteiroT L MartinP A J BagotM P MoodyE Alves and K Lorenz, "Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates", Journal of Physics D: Applied Physics, Volume 50, Number 20 (2017), DOI: 10.1088/1361-6463/aa69dc

C.J. Humphreys, J.T. Griffiths, F. Tang, F. Oehler, S.D. Findlay, C. Zheng, J. Etheridge, T.L. Martin, P.A.J. Bagot, M.P. Moody, D. Sutherland, P. Dawson, S. Schulz, S. Zhang, W.Y. Fu, T. Zhu, M.J. Kappers, R.A. Oliver, "The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem", Ultramicroscopy, Volume 176, May 2017, Pages 93-98, DOI: 10.1016/j.ultramic.2017.01.019

Tongtong Zhu, Yingjun Liu, Tao Ding, Wai Yuen Fu, John Jarman, Christopher Xiang Ren, R. Vasant Kumar & Rachel A. Oliver, "Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification", Scientific Reports 7, Article number: 45344 (2017), DOI: 10.1038/srep45344

Lok Yi Lee, "Cubic zincblende gallium nitride for green-wavelength light-emitting diodes", Materials Science and Technology, 2017, DOI: 10.1080/02670836.2017.1300726

Pierre-Marie Coulon , Shahrzad hosseini Vajargah, An Bao, Paul R. Edwards, Emmanuel D. Le Boulbar, Ionut Girgel, Robert W. Martin, Colin J. Humphreys, Rachel A. Oliver, Duncan W. E. Allsopp , and Philip A. Shields, "Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure", Cryst. Growth Des., 2017, 17 (2), pp 474–482. DOI: 10.1021/acs.cgd.6b01281

C. X. RenT. J. PuchtlerT. ZhuJ. T. Griffiths and R. A. Oliver, "Defects in III-nitride microdisk cavities", Semiconductor Science and Technology, 32 (3) (2017), DOI: 10.1088/1361-6641/32/3/033002

L. Rigutti, B. Bonef, J. Speck, F. Tang, R.A. Oliver, "Atom probe tomography of nitride semiconductors", Scripta Materialia, Available online 12 January 2017, ISSN 1359-6462, DOI: 10.1016/j.scriptamat.2016.12.034

F. C-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O'Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, "Carrier localization in the vicinity of dislocations in InGaN", Journal of Applied Physics, Volume 121, 013104 (2017), DOI: 10.1063/1.4973278 DOI

Fabien Massabuau, Nicolas Piot, Martin Frentrup, Xiuze Wang, Quentin Avenas, Menno Kappers, Colin Humphreys, Rachel Oliver, "X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface", Phys. Status Solidi B, 1600664 (2017), DOI: 10.1002/pssb.201600664 DOI

A. Eblabla, B. Benakaprasad, X. Li, D. J. Wallis, I. Guineyand K. Elgaid, "Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology", Accepted in IEEE Microwave and Wireless Components Letters, 27(1), 10-12 (2017), DOI: 1109/LMWC.2016.2629964 DOI

Qian, H; Lee, K; Hosseini, S; Novikov, S; Guiney, I; Zaidi, Z; Jiang, S; Wallis, D; Foxon, C; Humphreys, C; Houston, P, "Novel GaN-based Vertical Heterostructure Field Effect Transistor Structures Using Crystallographic KOH etching and Overgrowth", Journal of Crystal Growth, 459, 185-188, (2017), DOI:10.1016/j.jcrysgro.2016.12.025 DOI