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Publications from 2017

C. X. RenT. J. PuchtlerT. ZhuJ. T. Griffiths and R. A. Oliver, "Defects in III-nitride microdisk cavities", Semiconductor Science and Technology, 32 (3) (2017), DOI:

L. Rigutti, B. Bonef, J. Speck, F. Tang, R.A. Oliver, "Atom probe tomography of nitride semiconductors", Scripta Materialia, Available online 12 January 2017, ISSN 1359-6462, DOI: 10.1016/j.scriptamat.2016.12.034.

F. C-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O'Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, and R. A. Oliver, "Carrier localization in the vicinity of dislocations in InGaN", Journal of Applied Physics, Volume 121, 013104 (2017), DOI: 10.1063/1.4973278 DOI

Fabien Massabuau, Nicolas Piot, Martin Frentrup, Xiuze Wang, Quentin Avenas, Menno Kappers, Colin Humphreys, Rachel Oliver, "X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface", Phys. Status Solidi B, 1600664 (2017), DOI: 10.1002/pssb.201600664 DOI

A. Eblabla, B. Benakaprasad, X. Li, D. J. Wallis, I. Guineyand K. Elgaid, "Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology", Accepted in IEEE Microwave and Wireless Components Letters, 27(1), 10-12 (2017), DOI: 1109/LMWC.2016.2629964 DOI

Qian, H; Lee, K; Hosseini, S; Novikov, S; Guiney, I; Zaidi, Z; Jiang, S; Wallis, D; Foxon, C; Humphreys, C; Houston, P, "Novel GaN-based Vertical Heterostructure Field Effect Transistor Structures Using Crystallographic KOH etching and Overgrowth", Journal of Crystal Growth, 459, 185-188, (2017), DOI:10.1016/j.jcrysgro.2016.12.025 DOI