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Cambridge Centre for Gallium Nitride

 

P. H. Griffin, M. Frentrup, T. Zhu, M. E. Vickers, and R. A. Oliver, "Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction", J. Appl. Phys. 126 (21), 213109 (2019); DOI:10.1063/1.5134143

S. Mandal, C. Yuan, F. C. P. Massabuau, J. W. Pomeroy, J. A. Cuenca, H. Bland, E. L. H. Thomas, D. J. Wallis, T. Batten, D. J. Morgan, R. A. Oliver, M. Kuball, and O. A. Williams, "Thick adherent diamond films on AlN with low thermal barrier resistance",  ACS Appl. Mater. Interfaces 11 (43), 40826 (2019); DOI: 10.1021/acsami.9b13869

B. Zhou, A. Das, M. J. Kappers, R. A. Oliver, C. J. Humphreys, and S. Krause, "InGaN as a Substrate for AC Photoelectrochemical Imaging", Sensors 19, 4386 (2019); DOI: 10.3390/s19204386

A. A. Roble, S. K. Patra, F. Massabuau, M. Frentrup, M. A. Leontiadou, P. Dawson, M. J. Kappers, R. A. Oliver, D. M. Graham, and S. Schulz, "Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells", Scientific Reports 9 (1), 1 (2019); DOI: 10.1038/s41598-019-53693-2

J. W. Roberts, P. R. Chalker, B. Ding, R. A. Oliver, J. T. Gibbon, L. A. H. Jones, V. R. Dhanak, L. J. Phillips, J.D. Major, and F. C. – P. Massabuau, "Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition", Journal of Crystal Growth 528, 125254 (2019); DOI: 10.1016/j.jcrysgro.2019.125254

T. Wang, T. Zhu, T. J. Puchtler, C. C. Kocher, H. P.  Springbett, J. C. Jarman, L. P. Nuttall, R. A. Oliver, and R. A. Taylor, "Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources", arXiv preprint, arXiv: https://arxiv.org/abs/1909.09056

J. Moloney, O. Tesh, M. Singh, J. W. Roberts, J. C. Jarman, L. C. Lee, T. N. Huq, J. Brister, S. Karboyan, M. Kuball, P. R. Chalker, R. A. Oliver, and F. C. P. Massabuau, "Atomic layer deposited α-Ga2O3 solar-blind photodetectors", J. Phys. D: Appl. Phys. 52 (47), 475101 (2019); DOI: 10.1088/1361-6463/ab3b76

A. A. Roble, M. T. Hibberd, M. J. Kappers, R. A. Oliver, and D. M. Graham, "Terahertz generation in gallium nitride quantum wells", 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, pp. 1-1 (2019); DOI: 10.1109/IRMMW-THz.2019.8874174

M. Nguyen, T. Zhu, M. Kianinia, F. Massabuau, I. Aharonovich, M. Toth, R. A. Oliver, and C. Bradac, "Effects of microstructure and growth conditions on quantum emitters in gallium nitride", APL Materials 7, 081106 (2019); DOI: 10.1063/1.5098794

L. Y. Lee, M. Frentrup, P. Vacek, F. C.-P. Massabuau, M. J. Kappers, D. J. Wallis, and R. A. Oliver, "Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates", Journal of Crystal Growth 524, 125167 (2019); DOI: 10.1016/j.jcrysgro.2019.125167

F. Tang, T. Zhu, W.-Y. Fu, F. Oehler, S. Zhang, J. Griffiths, C. Humphreys, T. Martin, P. Bagot, M. Moody, S. K. Patra, S. Schulz, P. Dawson, S. Church, J. Jacobs, and R. Oliver, "Insight into the impact of atomic-and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates", J. Appl. Phys. 125, 225704 (2019); DOI: 10.1063/1.5097411

M. Kianinia, M. Nguyen, T. Zhu, C. Bradac, M. Toth, R. Oliver, and I. Aharono, “Optical Properties of Room Temperature Single Photon Emitters in GaN”, 2019 Compound Semiconductor Week (CSW), Nara (Japan), pp. 1-1 (2019); DOI: 10.1109/ICIPRM.2019.8819189

J. C. Jarman, T. Zhu, P. H. Griffin, and R. A. Oliver, "Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates", Jpn. J. Appl. Phys. 58, SCCC14 (2019); DOI: https://doi.org/10.7567/1347-4065/ab0cfd

F.C.-P. Massabuau, M.K. Horton, E. Pearce, S. Hammersley, P. Chen, M.S. Zielinski, T.F.K. Weatherley, G. Divitini, P.R. Edwards, M.J. Kappers, C. McAleese, M.A. Moram, C.J. Humphreys, P. Dawson, and R.A. Oliver, "Optical and structural properties of dislocations in InGaN", J. Appl. Phys. 125, 165701 (2019); DOI: 10.1063/1.5084330

G.M. Christian, S. Schulz, S. Hammersley, M.J. Kappers, M. Frentrup, C.J. Humphreys, R.A. Oliver, and P. Dawson, "Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength", Jpn. J. Appl. Phys. 58, SCCB09 (2019); DOI: 10.7567/1347-4065/ab0407

K. Gao, H. Springbett, T. Zhu, R.A. Oliver, Y. Arakawa, and M.J. Holmes, "Spectral diffusion time scales in InGaN/GaN quantum dots", Appl. Phys. Lett. 114, 112109 (2019); DOI: 10.1063/1.5088205

L.Y. Lee, M. Frentrup, P. Vacek, M.J. Kappers, D.J. Wallis, and R.A. Oliver, "Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM", J. Appl. Phys. 125, 105303 (2019); DOI: 10.1063/1.5082846

K.T.P. Lim, C. Deakin, B. Ding, X. Bai, P. Griffin, T. Zhu, R. Oliver, and D. Credgington, "Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN", APL Materials 7, 021107 (2019); DOI: 10.1063/1.5083037

R. Ahumada-Lazo, J.A. Alanis, P. Parkinson, D.J. Binks, S.J.O. Hardman, J.T. Griffiths, F. Wisnivesky Rocca Rivarola, C.J. Humphrey, C. Ducati, N.J.L.K. Davis, "Emission Properties and Ultrafast Carrier Dynamics of CsPbCl3 Perovskite Nanocrystals", J. Phys. Chem. C 123 (4), 2651 (2019); DOI: 10.1021/acs.jpcc.8b11906.

N. Remesh, N. Mohan, S. Kumar, S. Prabhu, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath, "Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model", IEEE Transactions on Electron Devices 66, 613 (2019); DOI: 10.1109/TED.2018.2882533