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Publications from 2018

L. Y. Lee, M. Frentrup, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and D.J. Wallis, "Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN", J. Appl. Phys. 124, 105302 (2018); DOI: 10.1063/1.5046801

P. Griffin, T. Zhu, and R. Oliver, “Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors”, Materials 11, 1487 (2018); DOI: 10.3390/ma11091487

N. Khalid, J.-Y. Kim, A. Ionescu, T. Hussain, F. Oehler, T. Zhu, R. A. Oliver, I. Farrer, R. Ahmad, and C. H. W. Barnes, "Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure", J. Appl. Phys. 123, 103901 (2018); DOI: 10.1063/1.5022433

D. Wang, T. Zhu, R. A. Oliver, and E. L. Hu, "Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers", Optics Letters 43, pp. 799-802 (2018); DOI: 10.1364/OL.43.000799

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, R. Chu, C. De Santi, M. M. De Souza, S. Decoutere, L. Di Cioccio, B. Eckardt, T. Egawa, P. Fay, J. J. Freedsman, L. Guido, O. Häberlen, G. Haynes, T. Heckel, D. Hemakumara, P. Houston, J. Hu, M. Hua, Q. Huang, A. Huang, S. Jiang, H. Kawai, D. Kinzer, M. Kuball, A. Kumar, K. B. Lee, X. Li, D. Marcon, M. März, R. McCarthy, G. Meneghesso, M. Meneghini, E. Morvan, A. Nakajima, E. M. S. Narayanan, S. Oliver, T. Palacios, D. Piedra, M. Plissonnier, R. Reddy, M. Sun, I. Thayne, A. Torres, N. Trivellin, V. Unni, M. J. Uren, M. Van Hove, D. J. Wallis, J. Wang, J. Xie, S. Yagi, S. Yang, C. Youtsey, R. Yu, E. Zanoni, S. Zeltner, and Y. Zhang, "The 2018 GaN power electronics roadmap", J. Phys. D: Appl. Phys. 51, 163001 (2018); DOI: 10.1088/1361-6463/aaaf9d

S. A. Church, S. Hammersley, P. W. Mitchell, M. J. Kappers, L. Y. Lee, F. C.-P. Massabuau, S. L. Sahonta, M. Frentrup, L. J. Shaw, D. J. Wallis, C. J. Humphreys, R. A. Oliver, D. J. Binks, and P. Dawson, "Effect of stacking faults on the photoluminescence spectrum of zincblende GaN", J. Appl. Phys. 123, 185705 (2018); DOI: 10.1063/1.5026267

F. C.-P. Massabuau, P. Chen, S. L. Rhode, M. K. Horton, T. J. O'Hanlon, A. Kovács, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, C. J. Humphreys, and R. A. Oliver, "Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320R (2018); DOI: 10.1117/12.2288211

J.W. Roberts, J.C. Jarman, D.N. Johnstone, P.A. Midgley, P.R. Chalker, R.A. Oliver, and F.C.-P. Massabuau, "α-Ga2O3 grown by low temperature atomic layer deposition on sapphire", Journal of Crystal Growth 487, 23-27 (2018), DOI: 10.1016/j.jcrysgro.2018.02.014

C. X. Ren, F. Tang, R. A. Oliver, and T. Zhu, "Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure", J. Appl. Phys. 123, 45103 (2018). DOI: 10.1063/1.5008363

F. Tang, K. B. Lee, I. Guiney, M. Frentrup, J. S. Barnard, G. Divitini, Z. H. Zaidi, T. L. Martin, P. A. Bagot, M. P. Moody, C. J. Humphreys, P. A. Houston, R. A. Oliver, and D. J. Wallis, “Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN / GaN heterostructure field effect transistors”, J. Appl. Phys. 123, 24902 (2018). DOI: 10.1063/1.5006255