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Cambridge Centre for Gallium Nitride


M. Nguyen, T. Zhu, M. Kianinia, F. Massabuau, I. Aharonovich, M. Toth, R. Oliver, and C. Bradac, "Effects of microstructure and growth conditions on quantum emitters in Gallium Nitride", arXiv preprint (2018); arXiv:1811.11914

Y. Robin, M. Pristovsek, H. Amano, F. Oehler, R. A. Oliver, and C. J. Humphreys, "What is red? On the chromaticity of orange-red InGaN/GaN based LEDs", J. Appl. Phys. 124, 183102 (2018); DOI: 10.1063/1.5047240

M. Halsall, I. F. Crowe, J. Mullins, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, "Photo-modulated reflectivity measurement of free-carrier dynamics in InGaN/GaN quantum wells", ACS Photonics 5, 4437 (2018); DOI: 10.1021/acsphotonics.8b00904

G. M. Christian, S. Schulz, M.J. Kappers, C.J. Humphreys, R.A. Oliver, and P. Dawson, "Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities", Phys. Rev. B 98, 155301 (2018); DOI: 10.1103/PhysRevB.98.155301

T. Zhu, J. C. Jarman, C. X. Ren, F. Tang, C. C. Kocher, T. J. Puchtler, B. P. L. Reid, T. Wang, S. K. Patra, S. Schulz, R. A. Taylor, and R. A. Oliver, "Nitride Single Photon Sources", 2018 IEEE Photonics Conference (IPC), 1-2 (2018); DOI:10.1109/IPCon.2018.8527217

T. Weatherley, F. Massabuau, M. Kappers, and R. Oliver, "Characterisation of InGaN by Photoconductive Atomic Force Microscopy", Materials 11, 1794 (2018); DOI: 10.3390/ma11101794

G. Christian, M. Kappers, F. Massabuau, C. Humphreys, R. Oliver, and P. Dawson, "Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells", Materials 11, 1736 (2018); DOI: 10.3390/ma11091736

L. Y. Lee, M. Frentrup, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and D.J. Wallis, "Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN", J. Appl. Phys. 124, 105302 (2018); DOI: 10.1063/1.5046801

H. P. Springbett, K. Gao, J. Jarman, T. Zhu, M. Holmes, Y. Arakawa, and R. A. Oliver, "Improvement of single photon emission from InGaN QDs embedded in porous micropillars", Appl. Phys. Lett. 113, 101107 (2018); DOI: 10.1063/1.5045843

P. Griffin, T. Zhu, and R. Oliver, “Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors”, Materials 11, 1487 (2018); DOI: 10.3390/ma11091487

M. Kianinia, C. Bradac, M. Nguyen, T. Zhu, M. Toth, R. A. Oliver, and I. Aharonovich, "Resonant excitation of quantum emitters in gallium nitride", Optica 5, 932-933 (2018); DOI: 10.1364/OPTICA.5.000932

F. S. Choi, J.T. Griffiths, C. Ren, K.B. Lee, Z.H. Zaidi, P.A. Houston, I. Guiney, C. J. Humphreys, R. A. Oliver, and D. J. Wallis, "Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers", J. Appl. Phys. 124, 055702 (2018); DOI: 10.1063/1.5027680

C. J. Humphreys, F. C.-P. Massabuau, S. L. Rhode, M. K. Horton, T. J. O’Hanlon, A. Kovacs, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, and R. A. Oliver, "Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs", Microscopy and Microanalysis 24, 4-5 (2018); DOI: 10.1017/S143192761800051X

L. Rigutti, B. Bonef, J. Speck, F. Tang, R. A. Oliver, "Atom probe tomography of nitride semiconductors", Scripta Materialia 148, 75-81 (2018); DOI: 10.1016/j.scriptamat.2016.12.034

S.-J. Cho, X. Li, I. Guiney, K. Floros, D. Hemakumara, D. J. Wallis, C. J. Humphreys, and I. G. Thayne, "Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs", Electronics Letters 54, 947 (2018); DOI: 10.1049/el.2018.1097

Z. H. Zaidi, K. B. Lee, J. W. Roberts, I. Guiney, H. Qian, S. Jiang, J. S. Cheong, P. Li, D. J. Wallis, C. J. Humphreys, P. R. Chalker, and P. A. Houston, "Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs", J. Appl. Phys. 123, 184503 (2018); DOI: 10.1063/1.5027822

W. E. Blenkhorn, S. Schulz, D. S. P. Tanner, R. A. Oliver, M. J. Kappers, C. J. Humphreys, and P. Dawson, "Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures", J. Phys.: Condens. Matter 30, 175303 (2018); DOI:10.1088/1361-648X/aab818

N. Khalid, J.-Y. Kim, A. Ionescu, T. Hussain, F. Oehler, T. Zhu, R. A. Oliver, I. Farrer, R. Ahmad, and C. H. W. Barnes, "Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure", J. Appl. Phys. 123, 103901 (2018); DOI: 10.1063/1.5022433

D. Wang, T. Zhu, R. A. Oliver, and E. L. Hu, "Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers", Optics Letters 43, pp. 799-802 (2018); DOI: 10.1364/OL.43.000799

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, R. Chu, C. De Santi, M. M. De Souza, S. Decoutere, L. Di Cioccio, B. Eckardt, T. Egawa, P. Fay, J. J. Freedsman, L. Guido, O. Häberlen, G. Haynes, T. Heckel, D. Hemakumara, P. Houston, J. Hu, M. Hua, Q. Huang, A. Huang, S. Jiang, H. Kawai, D. Kinzer, M. Kuball, A. Kumar, K. B. Lee, X. Li, D. Marcon, M. März, R. McCarthy, G. Meneghesso, M. Meneghini, E. Morvan, A. Nakajima, E. M. S. Narayanan, S. Oliver, T. Palacios, D. Piedra, M. Plissonnier, R. Reddy, M. Sun, I. Thayne, A. Torres, N. Trivellin, V. Unni, M. J. Uren, M. Van Hove, D. J. Wallis, J. Wang, J. Xie, S. Yagi, S. Yang, C. Youtsey, R. Yu, E. Zanoni, S. Zeltner, and Y. Zhang, "The 2018 GaN power electronics roadmap", J. Phys. D: Appl. Phys. 51, 163001 (2018); DOI: 10.1088/1361-6463/aaaf9d

S. A. Church, S. Hammersley, P. W. Mitchell, M. J. Kappers, L. Y. Lee, F. C.-P. Massabuau, S. L. Sahonta, M. Frentrup, L. J. Shaw, D. J. Wallis, C. J. Humphreys, R. A. Oliver, D. J. Binks, and P. Dawson, "Effect of stacking faults on the photoluminescence spectrum of zincblende GaN", J. Appl. Phys. 123, 185705 (2018); DOI: 10.1063/1.5026267

F. C.-P. Massabuau, P. Chen, S. L. Rhode, M. K. Horton, T. J. O'Hanlon, A. Kovács, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, C. J. Humphreys, and R. A. Oliver, "Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320R (2018); DOI: 10.1117/12.2288211

J.W. Roberts, J.C. Jarman, D.N. Johnstone, P.A. Midgley, P.R. Chalker, R.A. Oliver, and F.C.-P. Massabuau, "α-Ga2O3 grown by low temperature atomic layer deposition on sapphire", Journal of Crystal Growth 487, 23-27 (2018); DOI: 10.1016/j.jcrysgro.2018.02.014

C. X. Ren, F. Tang, R. A. Oliver, and T. Zhu, "Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure", J. Appl. Phys. 123, 45103 (2018); DOI: 10.1063/1.5008363

F. Tang, K. B. Lee, I. Guiney, M. Frentrup, J. S. Barnard, G. Divitini, Z. H. Zaidi, T. L. Martin, P. A. Bagot, M. P. Moody, C. J. Humphreys, P. A. Houston, R. A. Oliver, and D. J. Wallis, Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN / GaN heterostructure field effect transistors", J. Appl. Phys. 123, 24902 (2018); DOI: 10.1063/1.5006255

B. F. Spiridon, P. H. Griffin, J. C. Jarman, Y. Liu, T. Zhu, A. De Luca, R. A. Oliver, and F. Udrea,"On-Chip Thermal Insulation Using Porous GaN", Proceedings 2, 776 (2018); DOI:10.3390/proceedings2130776