skip to primary navigationskip to content
 

Publications from 2018

F. C.-P. Massabuau, P. Chen, S. L. Rhode, M. K. Horton, T. J. O'Hanlon, A. Kovács, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, C. J. Humphreys, R. A. Oliver, "Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320R (23 February 2018); DOI: 10.1117/12.2288211

J.W. Roberts, J.C. Jarman, D.N. Johnstone, P.A. Midgley, P.R. Chalker, R.A. Oliver, F.CP. Massabuau, α-Ga2O3 grown by low temperature atomic layer deposition on sapphire, Journal of Crystal Growth, 487, 23-27 (2018), DOI: 10.1016/j.jcrysgro.2018.02.014

Ren, C. X., Tang, F., Oliver, R. A. & Zhu, T. Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure. J. Appl. Phys. 123, 45103 (2018). DOI: 10.1063/1.5008363

F. Tang, K. B. Lee, I. Guiney, M. Frentrup, J. S. Barnard, G. Divitini, Z. H. Zaidi, T. L. Martin, P. A. Bagot, M. P. Moody, C. J. Humphreys, P. A. Houston, R. A. Oliver, D. J. Wallis, F. Tang, K. B. Lee, I. Guiney, M. Frentrup, J. S. Barnard, G. Divitini, Z. H. Zaidi, T. L. Martin, P. A. Bagot, M. P. Moody, C. J. Humphreys, P. A. Houston, R. A. Oliver and D. J. Wallis, “GaN heterostructure field effect transistors Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN / GaN heterostructure field effect transistors,” J. Appl. Phys., vol. 123, no. 24902, 2018. DOI: 10.1063/1.5006255