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Publications from 2018

J.W. Roberts, J.C. Jarman, D.N. Johnstone, P.A. Midgley, P.R. Chalker, R.A. Oliver, F.CP. Massabuau, α-Ga2O3 grown by low temperature atomic layer deposition on sapphire, Journal of Crystal Growth (2018), DOI: 10.1016/j.jcrysgro.2018.02.014

Ren, C. X., Tang, F., Oliver, R. A. & Zhu, T. Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure. J. Appl. Phys. 123, 45103 (2018). DOI: 10.1063/1.5008363

F. Tang, K. B. Lee, I. Guiney, M. Frentrup, J. S. Barnard, G. Divitini, Z. H. Zaidi, T. L. Martin, P. A. Bagot, M. P. Moody, C. J. Humphreys, P. A. Houston, R. A. Oliver, D. J. Wallis, F. Tang, K. B. Lee, I. Guiney, M. Frentrup, J. S. Barnard, G. Divitini, Z. H. Zaidi, T. L. Martin, P. A. Bagot, M. P. Moody, C. J. Humphreys, P. A. Houston, R. A. Oliver and D. J. Wallis, “GaN heterostructure field effect transistors Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN / GaN heterostructure field effect transistors,” J. Appl. Phys., vol. 123, no. 24902, 2018. DOI: 10.1063/1.5006255