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Publications from 2017

Kumar, S., Gupta, P., Guiney, I., Humphreys, C. J., Raghavan, S., Muralidharan, R., Nath D. N., "Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer," in IEEE Transactions on Electron Devices, vol. PP, no. 99, pp. 1-7. DOI: 10.1109/TED.2017.2757516

Rouet-Leduc, B., Hulbert, C., Barros, K., Lookman, T., Humphreys, C. J., "Automatized convergence of optoelectronic simulations using active machine learning", Appl. Phys. Lett. 111, 043506 (2017). DOI: 10.1063/1.4996233

Rouet-Leduc, B., Hulbert, C., Lubbers, N., Barros, K., Humphreys, C. J., & Johnson, P. A. (2017). Machine learning predicts laboratory earthquakes. Geophysical Research Letters, 44, 9276–9282. DOI: 10.1002/2017GL074677

Guiney, I., Thomas, S., Humphreys, C. J., "Single-step manufacturing process for the production of graphene-V/III LED heterostructures", Proceedings Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI; 101240D (2017). DOI: 10.1117/12.2250166

Kim, J.-Y., Ionescu, A., Mansell, R., Farrer, I., Oehler, F., Kinane, C. J, Cooper, J. F. K., Steinke, N.-J., Langridge, S., Stankiewicz, R., Humphreys, C. J., Cowburn, R. P., Holmes, S. N., Barnes, C. H. W., "Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)", Journal of Applied Physics 121, 043904 (2017). DOI: 10.1063/1.4973956

Humphreys, C. J., Waddington, G., "Solar eclipse of 1207 BC helps to date pharaohs", Astronomy & Geophysics 58(5):5.39-5.42, (October 2017). DOI: 10.1093/astrogeo/atx178

Eblabla, A. M., Li,  X., Wallis, D. J., Guiney, I.,  Elgaid, K., "GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology," IEEE Transactions on Terahertz Science and Technology, vol. 7, no. 1, pp. 93-97, Jan. 2017. DOI: 10.1109/TTHZ.2016.2618751

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D. J., Guiney, I., Elgaid, K., “Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology”, IEEE Microwave and Wireless Components Letters, vol. 27, no. 1, pp. 10-12, Jan. 2017. DOI: 10.1109/LMWC.2016.2629964

Jiang, S., Lee, K. B., Guiney, I., Miaja, O. F., Zaidi, Z. H., Qian, H., Wallis, D. J., Forsyth, A. J., Humphreys, C. J., Houston, P. A., “All-GaN Integrated Cascode Heterojunction Field Effect Transistors”, IEEE Transactions on Power Electronics, vol. 32, no. 11, pp. 8743-8750, Nov. 2017. DOI: 10.1109/TPEL.2016.2643499

Eblabla, A., Benakaprasad, B., Li, X., Wallis D. J., Guiney, I., Humphreys, C. J., Elgaid, K., “Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC)”, 2017 18th International Radar Symposium (IRS), Prague, 2017, pp. 1-7. DOI: 10.23919/IRS.2017.8008166

Floros, K., Li, X., Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E., Moran, D. A. J., Humphreys, C. J. and Thayne, I. G., "Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt- and Ni-based gate stacks", Phys. Status Solidi A, 214: n/a, 1600835, (2017) DOI:10.1002/pssa.201600835

Mandal, S., Thomas, E. L. H., Middleton, C., Gines, L., Griffiths, J., Kappers, M. J., Oliver, R. A., Wallis, D. J., Goff, L. E., Lynch, S. A., Kuball, M., Williams, O. A., “Surface zeta potential and diamond seeding on gallium nitride films”, arXiv preprint arXiv:1707.05410, (2017), DOI: 10.1021/acsomega.7b01069

Massabuau, F. C-P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovacs, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E., Oliver, R. A., “Carrier localization in the vicinity of dislocations in InGaN”, J. Appl. Phys., 121,  13104, (2017), DOI: 10.1063/1.4973278 

Coulon, P.-M., Vajargah, S. H., Bao, A., Edwards, P. R., Le Boulbar, E. D., Girgel, I., Martin, R. W., Humphreys, C. J., Oliver, R. A., Allsopp, Duncan W. E., Shields, Philip A., “Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure”, Crystal Growth & Design, 17, 474-482, (2017), DOI: 10.1021/acs.cgd.6b01281 

Zhu, T., Liu, Y., Ding, T., Fu, W. Y., Jarman, J., Ren, C. X., Kumar, R. V., Oliver, R. A., “Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification”, Scientific Reports, 7,  45344, (2017), DOI: 10.1038/srep45344 

Griffiths, J. T., Ren, C. X., Coulon, P. -M., Le Boulbar, E. D., Bryce, C. G., Girgel, I., Howkins, A., Boyd, I., Martin, R. W., Allsopp, D. W. E., Shields, P. A., Humphreys, C. J., Oliver, R. A., “Structural impact on the nanoscale optical properties of InGaN core-shell nanorods”, Appl. Phys. Lett., 110,  172105, (2017), DOI: 10.1063/1.4982594

Magalhaes, S., Franco, N., Watson, I. M., Martin, R. W., O”Donnell, K. P., Schenk, H. P. D., Tang, F., Sadler, T. C., Kappers, M. J., Oliver, R. A., Monteiro, T., Martin, T. L., Bagot, P. A. J., Moody, M. P., Alves, E., Lorenz, K., “Validity of Vegard”s rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates”, J. Phys. d, 50, 205107, (2017), DOI: 10.1088/1361-6463/aa69dc

Pristovsek, M., Bao, A., Oliver, R. A., Badcock, T., Ali, M., Shields, A.,“Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes”, Phys. Rev. Appl., 7,  64007, (2017), DOI: 10.1103/PhysRevApplied.7.064007

Wang, T., Puchtler, T. J., Zhu, T., Jarman, J. C., Kocher, C. C., Oliver, R. A., Taylor, R. A., “Temperature-dependent fine structure splitting in InGaN quantum dots”, Appl. Phys. Lett., 111,  53101, (2017), DOI: 10.1063/1.4996861

Wang, T., Puchtler, T. J., Zhu, T., Jarman, J. C., Nuttall, L. P., Oliver, R. A., Taylor, R. A., “Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots”,  Nanoscale, 9, 9421-9427, (2017), DOI: 10.1039/c7nr03391e

Rae, K., Foucher, C., Guilhabert, B., Islim, M. S., Yin, L., Zhu, D., Oliver, R. A., Wallis, D. J., Haas, H., Laurand, N., Dawson, M. D., “InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass”, Optics Express, 25,  19179-19184, (2017), DOI: 10.1364/OE.25.019179

Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P., “Photoluminescence studies of cubic GaN epilayers”, phys. stat. sol. b, 254, 1600733, (2017), DOI: 10.1002/pssb.201600733

Bao, A., Goff, L. E., Zhu, T., Sahonta, S. -L., Ritchie, D. A., Joyce, H. J., Moram, M. A., Oliver, R. A., “Properties of GaN nanowires with ScxGa1-xN insertion”, phys. stat. sol. b, 254, 1600740,  (2017), DOI: 10.1002/pssb.201600740

Massabuau, F. C-P., Rhode, S. L., Horton, M. K., O”Hanlon, T. J., Kovacs, A., Zielinski, M. S., Kappers, M. J., Dunin-Borkowski, R. E., Humphreys, C. J., Oliver, R. A., “Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties”, Nano Letters, 17, 4846-4852, (2017), DOI: 10.1021/acs.nanolett.7b01697

Wang, T., Puchtler, T. J., Zhu, T., Jarman, J. C., Oliver, R. A., Taylor, R. A., “High-temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method”, phys. stat. sol. b, 254, 1600724,(2017), DOI: 10.1002/pssb.201600724

Patra, S. K., Wang, T., Puchtler, T. J., Zhu, T., Oliver, R. A., Taylor, R. A., Schulz, S., “Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots”, phys. stat. sol. b, 254, 1600675,(2017), DOI: 10.1002/pssb.201600675

Massabuau, F., Kappers, M., Humphreys, C., Oliver, R., “Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth”, phys. stat. sol. b, 254, 1600666,(2017), DOI: 10.1002/pssb.201600666

Massabuau, F., Piot, N., Frentrup, M., Wang, X., Avenas, Q., Kappers, M., Humphreys, C., Oliver, R., “X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface”, phys. stat. sol. b, 254, 1600664, (2017), DOI: 10.1002/pssb.201600664

Wang, T., Puchtler, T. J., Patra, S. K., Zhu, T., Ali, M., Badcock, T. J., Ding, T., Oliver, R. A., Schulz, S., Taylor, R. A., “Direct generation of linearly polarized single photons with a deterministic axis in quantum dots”, Nanophotonics, 6, 1175-1183, (2017), DOI: 10.1515/nanoph-2017-0027

Madusanka, N., Shivareddy, S. G., Eddleston, M. D., Hiralal, P., Oliver, R. A., Amaratunga, G. A. J., “Dielectric behaviour of montmorillonite/cyanoethylated cellulose nanocomposites”, Carbohydrate Polymers, 172, 315-321, (2017), DOI: 10.1016/j.carbpol.2017.05.057

Frentrup, M., Lee, L.Y., Sahonta, S.-L., Kappers, M.J., Massabuau, F., Gupta, P., Oliver, R.A., Humphreys, C.J., Wallis, D.J., "X-ray analysis of cubic zincblende III-nitrides", J. Phys. D: Appl. Phys., 50 , 433002, (2017), DOI: 10.1088/1361-6463/aa865e

Humphreys, C. J., Griffiths, J. T., Tang, F., Oehler, F., Findlay, S. D., Zheng, C., Etheridge, J., Martin, T. L., Bagot, P. A. J., Moody, M. P., Sutherland, D., Dawson, P., Schulz, S., Zhang, S., Fu, W. Y., Zhu, T., Kappers, M. J., Oliver, R. A., “The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem”, Ultramicroscopy, 176, 93-98,  (2017), DOI: 10.1016/j.ultramic.2017.01.019

Lee, L. Y., "Cubic zincblende gallium nitride for green-wavelength light-emitting diodes", Materials Science and Technology, 2017, DOI: 10.1080/02670836.2017.1300726

Ren, C.X., Puchtler, T.J., Zhu, T., Griffiths, J.T., Oliver, R.A.,“Defects in III-nitride microdisk cavities”, Semiconductor Science And Technology, 32, 033002, (2017), DOI: 10.1088/1361-6641/32/3/033002

Rigutti, L., Bonef, B., Speck, J., Tang, F., Oliver, R.A., “Atom probe tomography of nitride semiconductors”, Scripta Materialia, (2017), DOI: 10.1016/j.scriptamat.2016.12.034

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D. J., Guiney I., Elgaid, K., "Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology", IEEE Microwave and Wireless Components Letters, 27(1), 10-12 (2017), DOI: 10.1109/LMWC.2016.2629964

Qian, H; Lee, K; Hosseini, S; Novikov, S; Guiney, I; Zaidi, Z; Jiang, S; Wallis, D; Foxon, C; Humphreys, C; Houston, P, "Novel GaN-based Vertical Heterostructure Field Effect Transistor Structures Using Crystallographic KOH etching and Overgrowth", Journal of Crystal Growth, 459, 185-188, (2017), DOI:10.1016/j.jcrysgro.2016.12.025