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Cambridge Centre for Gallium Nitride

 
Read more at: New summer student working on porous GaN
New summer student working on porous GaN

New summer student working on porous GaN

Raymond Smith will be joining the centre for a summer placement as part of his MRes within the IPES CDT programme. He will be working with Peter Griffin on exploiting the genetic algorithm for optimising porous GaN devices. Before applying to the CDT Raymond studied natural sciences here at Cambridge.


Read more at: Helen to visit Tokyo on Fellowship
Helen to visit Tokyo on Fellowship

Helen to visit Tokyo on Fellowship

Helen Springbett is to start a summer Fellowship at the University of Tokyo through the Japan Society for the Promotion of Science . She will be working on characterisation of quantum dots using photoluminescence with Prof. Mark Holmes and Prof. Yasuhiko Arakawa at the Institute for Nano Quantum Information Electronics .


Read more at: EPL showcase our work as a highlight of 2016
EPL showcase our work as a highlight of 2016

EPL showcase our work as a highlight of 2016

The journal E urophysics letters (EPL) has published its highlights of 2016 , bringing to attention our review paper on Nitride quantum light sources . The paper by Tongtong Zhu and Rachel Oliver was selected under the Applied and Interdisciplnary topics category.


Read more at: Illuminating minds at the Science Festival

Illuminating minds at the Science Festival

Last weekend the centre ran a number of workshops and talks that showcased our work to all ages. See some of the pictures below:


Read more at: John Jarman wins prize in IOM3 lecture competition
John Jarman wins prize in IOM3 lecture competition

John Jarman wins prize in IOM3 lecture competition

Congratulations to John Jarman who won second prize in the regional heat of the IOM 3 lecture competition. John's talk: "Light Machinery: nanoscale engineering of materials for quantum light sources" was part of our work on quantum light sources .


Read more at: GaN at the Cambridge Science Festival
GaN at the Cambridge Science Festival

GaN at the Cambridge Science Festival

The Cambridge Science Festival is almost here! From the 13th to the 26th March researchers all across the city will be opening their doors to the public to share and shout about the amazing work they're doing. From medicine to particle physics there will be events for all interests and all ages. Of course, we are no...


Read more at: Paper of the Month: Review on defects in Nitride Disk Cavities
Paper of the Month: Review on defects in Nitride Disk Cavities

Paper of the Month: Review on defects in Nitride Disk Cavities

March's paper of the month is a review paper on defects in III-Notride microdisk cavities, studied for applications in LEDs and low-threshold lasers. It is now live and available here . Access our paper of the month archive here .


Read more at: GaN on Diamond Project launches
GaN on Diamond Project launches

GaN on Diamond Project launches

The centre has just begun an exciting new £4.3 million EPSRC funded project to develop GaN on diamond microwave devices. The aim is to use diamond layers as a heat spreading layer to allow high power radio and microwave devices for 5G and 6G communication systems. The project is a collaboration with Bristol, Glasgow...


Read more at: IOM3 Cambridge Region Young Persons' Lecture Competition
IOM3 Cambridge Region Young Persons' Lecture Competition

IOM3 Cambridge Region Young Persons' Lecture Competition

This evening is the Cambridge Region Young Persons' Lecture Competition of the Institute of Materials, Minerals and Mining and the GaN group is very well represented. We have three entrants giving talks across our work on GaN Lok Yi Lee will be presenting her work on the cubic project : "Cubic zincblende gallium nitride...


Read more at: Chris Ren passes his Viva
Chris Ren passes his Viva

Chris Ren passes his Viva

Many congratulations to Chris Ren who passed his PhD Viva Voce examination on Friday of last week! To read a bit more about Chris' work see his profile here .


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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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