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Cambridge Centre for Gallium Nitride

 

February's paper of the month is live and available here. It shows the work of Fabien Massabuau et al. to characterise dislocations with multi-microscopy in order to explore carrier localisation in InGaN.

Read a general introduction to our multi-microscopy work here.

You can see abstracts and links to all of our paper's of the month here.

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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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