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Porous GaN paper chosen as Editor’s Pick

last modified Feb 27, 2019 08:33 AM

Our recent paper on the Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN has been chosen as an editor’s pick by APL Materials.

The work is the first output from a new collaboration between us and the Credgington group in the Cavendish Laboratory and is the result of a pair of mini projects by students from the Nano DTC and the IPES CDT.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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July 2019: Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

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