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Cambridge Centre for Gallium Nitride


Poro Technologies, a spin out from the centre has been awarded 1st prize and £20k investment from the Postdoc Business Plan competition run by Cambridge Enterprise and Entrepreneurial Postdocs of Cambridge (EPOC).

Last night, Tongtong Zhu gave a 3 minute pitch to a packed out Peterhouse theatre against 5 other finalists of the competition. He demonstrated the capability and potential of porous GaN for transforming the LED industry through the wafer-scale approach that has been developed here at the centre for GaN. His pitch included a live demonstration of an LED with a porous GaN reflective substrate, as well as a porosified GaN structure on an industrial scale, 8 inch Si Wafer.

The prize is a great step for the spin out, which will now begin the process of finding further seed funding to develop and upscale the technology.

 Rachel Oliver, Tongtong Zhu and Yingjun Liu.


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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