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New summer student working on porous GaN

last modified Jun 05, 2017 12:33 PM

Raymond Smith will be joining the centre for a summer placement as part of his MRes within the IPES CDT programme. He will be working with Peter Griffin on exploiting the genetic algorithm for optimising porous GaN devices.

Before applying to the CDT Raymond studied natural sciences here at Cambridge.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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February 2019: Improvement of single photon emission from InGaN QDs embedded in porous micropillars

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