skip to primary navigationskip to content
 

John Jarman passes his first year review

last modified Jul 06, 2016 12:34 PM

Congratulations to John who has passed his first year PhD probationary review, with his paper on the processing of InGaN-based quantum light sources.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

December 2017: Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

Read more